Results 21 to 30 of about 19,463 (306)
Compact Modeling of Parasitic Capacitances in GAAFETs for Advanced Technology Nodes
IEEE Journal of the Electron Devices Society, 2023 In this work, a compact model for parasitic capacitances is proposed for Gate-All-Around silicon nanosheet FET (GAAFET). For 3 stack GAAFET, all possible parasitic capacitance components are included according to the electric field lines and geometric ...
Swapna Sarker +3 more
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Influence of parasitic capacitance variations on 65 nm and 32 nm predictive technology model SRAM core-cells [PDF]
, 2008 The continuous improving of CMOS technology allows the realization of digital circuits and in particular static random access memories that, compared with previous technologies, contain an impressive number of transistors.
Di Carlo, Stefano +3 more
core +1 more source
Silicon Based Coplanar Capacitive Device for Liquid Sensor Applications
Sensors, 2021 The development of silicon-based sensor devices has enabled the possibility to pursue novel integrated smart sensor technologies. Under this scenario, capacitive sensor devices are one viable option for implementing different kinds of applications.
Andrea G. Martinez-Lopez +3 more
doaj +1 more source
IEEE Access, 2021 This paper proposes a varactor-based circuit technique intended for amplitude and phase control, with improved linearity in the presence of parasitic capacitances and parasitic inductances.
David Berthiaume +2 more
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Single Supply Differential Capacitive Sensor with Parasitic Capacitance and Resistance Consideration [PDF]
2018 7th International Conference on Computer and Communication Engineering (ICCCE), 2018 A single supply differential capacitive sensing technique is presented in this paper with the focus of parasitic integration. In real application, any capacitive sensor should consider parasitic in its measurement. The aim of this paper is to analyze the effect of capacitive and resistive parasitic to the network circuit.
Nurul Arfah Che Mustapha +3 more
openaire +1 more source
Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs
IEEE Access, 2020 Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals ...
Utkarsh Jadli +5 more
doaj +1 more source
Energies, 2022 Different mechanisms for balancing power between parallel connected modules have been presented in recent years. They have been broadly classified into active and passive methods.
Jacinto M. Jiménez-Martínez +2 more
doaj +1 more source
Silicon-based distributed voltage-controlled oscillators [PDF]
, 2001 Distributed voltage-controlled oscillators (DVCOs) are presented as a new approach to the design of silicon VCOs at microwave frequencies. In this paper, the operation of distributed oscillators is analyzed and the general oscillation condition is ...
Hajimiri, Ali, Wu, Hui
core +1 more source
Effect of Parasitic Capacitance on GMI Magnetic Sensor Performance [PDF]
Key Engineering Materials, 2013 Magnetic sensors based on GMI devices are the subject of intensive research, as they appear promising for magnetometry applications. Performances of GMI magnetometers are often limited by the noise of the electronic setup. Thus, the present challenge is to increase the GMI device sensitivity (expressed in V/T) in order to decrease the equivalent ...
Saez, Sébastien +4 more
openaire +3 more sources
Accurate Settling-Time Modeling and Design Procedures for Two-Stage Miller-Compensated Amplifiers for Switched-Capacitor Circuits [PDF]
, 2009 We present modeling techniques for accurate estimation of settling errors in switched-capacitor (SC) circuits built with Miller-compensated operational transconductance amplifiers (OTAs).
Delgado Restituto, Manuel +2 more
core +1 more source