Results 141 to 150 of about 868 (191)

Bias Dependence of PBTI Degradation Mechanism in Metal-Oxide-Semiconductor Field Effect Transistors With La-Incorporated Hafnium-Based Dielectric

Microelectronic Engineering, 2011
Metal-oxide-semiconductor field effect transistors (MOSFETs) with various concentrations of La incorporated in Hf-based dielectrics were characterized to evaluate the effect of La on devices' reliability.
Rino Choi, Jae Kyeong Jeong, Yoon-Uk Heo
exaly   +2 more sources

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HKMG CMOS Technology Qualification: The PBTI Reliability Challenge

Microelectronics Reliability, 2014
Abstract We present a brief overview of Positive Bias Temperature Instability (PBTI) commonly observed in n-channel MOSFETs with SiO2/HfO2/TiN dual-layer gate stacks when stressed with positive gate voltage at elevated temperatures. We review the origin and present understanding of the characteristics of oxide traps that are responsible for the ...
exaly   +3 more sources

On Recoverable Behavior of PBTI in AlGaN/GaN MOS-HEMT [PDF]

Solid-State Electronics, 2017
This experimental study focuses on the positive bias temperature instability (PBTI) in a fully recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in positive threshold voltage shift (ΔVth), which is attributed to the trapping of electrons from the GaN layer into the pre-existing oxide traps.
Felice Crupi, Gaudenzio Meneghesso, Lionel Trojman   +2 more
exaly   +4 more sources

PBTI for N-type tunnel FinFETs

2015 International Conference on IC Design & Technology (ICICDT), 2015
This paper reports the positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel field-effect transistors (TFETs) with high-k gate stacks. The subthreshold slope (SS) is not degraded at all while the threshold voltage (V th ) shifts in the positive direction by the PBTI stress.
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara   +13 more
openaire   +1 more source

New insights on the PBTI phenomena in SiON pMOSFETs

Microelectronics Reliability, 2012
Abstract The physical origin of both Negative- and Positive Bias Temperature Instability (N-/PBTI) is still unclear and under debate. We analyzed the rarely studied recovery behavior after PBTI stress in pMOSFETs and compared it with NBTI data obtained from the same technology. While recovery after short stress times is consistent with the previously
Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser   +6 more
openaire   +1 more source

NBTI/PBTI tolerant arbiter PUF circuits

2017 IEEE 23rd International Symposium on On-Line Testing and Robust System Design (IOLTS), 2017
In this paper, we propose NBTI/PBTI (negative/positive bias temperature instability) tolerant arbiter PUF (physical unclonable function) circuits and evaluate its performance. The PUF is a technology for generating cryptographic keys and authenticating by utilizing physical characteristics, such as electronic delays, built in the devices when they were
Koyo Suzuki, Katsuyoshi Miura, Koji Nakamae   +2 more
openaire   +1 more source

Impacts of NBTI and PBTI effects on ternary CAM

International Symposium on Quality Electronic Design (ISQED), 2013
Ternary content addressable memory (TCAM), which can store 0, 1 and X in its cells, is widely used to store routing tables in network routers. Meanwhile, NBTI (Negative Bias Temperature Instability) and PBTI (Positive Biased Temperature Instability), which increase Vth and degrade transistor switching speed, have become major reliability challenges. In
Yen-Han Lee, Ing-Chao Lin, Sheng-Wei Wang   +2 more
openaire   +2 more sources

Statistical Aspects of NBTI/PBTI and Impact on SRAM Yield

2011 Design, Automation & Test in Europe, 2011
Quantitative simulations of the statistical impact of negative-bias-temperature-instability (NBTI) on pMOSFETs, and positive-bias-temperature-instability (PBTI) on nMOSFETs are carried out for a 45nm low power technology generation. Based on the statistical simulation results, we investigate the impact of NBTI and PBTI on the degradation of the static ...
Asen Asenov, Andrew R Brown, Binjie Cheng   +2 more
exaly   +3 more sources

Intrinsic Correlation Between PBTI and TDDB Degradations in nMOS HK/MG Dielectrics

, 2012
We develop a phenomenological theory of PBTI/TDDB reliability of HK/MG gate stack based on heterogeneous Trap Generation (TG) and structural relaxation in interfacial (IL) and HK layers.
Muhammad Ashraful Alam, Souvik Mahapatra, Subhadeep Mukhopadhyay   +2 more
exaly   +2 more sources

An All BTI (N-PBTI, N-NBTI, P-PBTI, P-NBTI) Odometer based on a Dual Power Rail Ring Oscillator Array

2021 IEEE International Reliability Physics Symposium (IRPS), 2021
An on-chip reliability monitor capable of characterizing all four bias temperature instability (BTI) modes is proposed. Stressed ring oscillators with independent dual power rails are implemented in which odd and even stages of an inverter chain are subject to different stress voltage configurations.
Gyusung Park, Hanzhao Yu, Minsu Kim, Chris H. Kim   +3 more
openaire   +1 more source