A 66-76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application. [PDF]
Micromachines (Basel), 2022 Zhou P +5 more
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A 2-V 1.4-dB NF GaAs MMIC LNA for K-Band Applications. [PDF]
Sensors (Basel), 2023 Galante-Sempere D +2 more
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Design and Performance of Extraordinary Low-Cost Compact Terahertz Imaging System Based on Electronic Components and Paraffin Wax Optics. [PDF]
Sensors (Basel), 2022 Tamošiūnas V +5 more
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Miniature Integrated 2.4 GHz Rectennas Using Novel Tunnel Diodes. [PDF]
Sensors (Basel), 2023 Walsh C +3 more
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Editorial for the Special Issue on Broadband Terahertz Devices and Communication Technologies. [PDF]
Micromachines (Basel), 2023 Zhang L, Pang X, Pitchappa P.
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Editorial for the Special Issue on Broadband Terahertz Devices and Communication Technologies, 2nd Edition. [PDF]
Micromachines (Basel)Zhang J, Zhang L, Wang K, Yu X.
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A Ka-Band Integrated Six-Port Chip for Analog Complex Correlator. [PDF]
Sensors (Basel), 2022 He W, Chen X, Gong J, Hu A, Miao J.
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A Quasi-Lumped Element Tunable Bandpass Filter Based on GaAs Technology. [PDF]
Micromachines (Basel)Cheng X, You B.
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Research of V-band pHEMT Cascode Power Amplifiers
, 2013 本論文中，設計並實現三個高頻放大器，分別包含一個V頻段緩衝放大器以及V頻段功率放大器，最後為一個67 GHz高輸出功率之功率放大器，皆採用高速電子遷移率電晶體(pHEMT)製程製作。 論文第一部分描述了一個應用於V頻段的緩衝放大器，採用0.15微米低雜訊pHEMT製程，此電路為兩級疊接組態的放大器設計。高頻的疊接組態電路通常會使用共面波導方式來作電路佈局，以減少寄生效應，而此電路在量測時，在60 GHz可以有約18 dB的小訊號增益以及3.5 dBm的飽和輸出功率 ...
白景賢, Bai, Jing-Shian
core
Design of a Ka-Band Five-Bit MEMS Delay with a Coplanar Waveguide Loaded U-Shaped Slit. [PDF]
Micromachines (Basel), 2023 Zhan Y, Chen Y, Guo H, Wu Q, Li M.
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