Results 121 to 130 of about 269 (178)

Terahertz integrated sensing and mobile communications empowered by a 220-GHz-band portable device. [PDF]

Nat Commun
Wang G, Li M, Liu Q, Zang J, Li O, Du X, Xu L, Tao M, Han C.   +8 more
europepmc   +1 more source

Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process. [PDF]

Micromachines (Basel)
Luo J, Fan Y, Wan J, Sun X, Liang X.
europepmc   +1 more source

Design of a Fixed IF Down-Conversion Double-Balanced Mixer for UHF Band Applications. [PDF]

Sensors (Basel)
Kared T, Silaghi H, Rudolph M, Silaghi A, Rohde UL.   +4 more
europepmc   +1 more source

A Reformed PSO-Based High Linear Optimized Up-Conversion Mixer for Radar Application. [PDF]

Sensors (Basel)
Delwar TS, Aras U, Siddique A, Lee Y, Ryu JY.   +4 more
europepmc   +1 more source

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Off‐state and on‐state breakdown of GaAs MESFET, PHEMT and Power PHEMT

physica status solidi c, 2006
We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier design operating in non linear conditions with operating level close to the maximum operating conditions ...
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean‐Luc Muraro   +4 more
openaire   +1 more source

A pHEMT power amplfier with an on-off modulator

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2013
This paper presents a transformer-based switching-type RF power amplifier with an on-off modulator using a 0.15-μm pHEMT process. In order to overcome the inherent limitation of ground potential at the source node of transistor models in this pHEMT process, an on-off modulator was designed for the proposed pulse-modulated polar transmitter system ...
Hao-Shun Yang, Li-Wei Lin, Yi-Jan Emery Chen   +2 more
openaire   +1 more source

Patterning 0.05 μm gate on pHEMT

Microelectronics Journal, 2009
The pseudomorphic high electron mobility transistor (pHEMT) was designed with 0.05@mm gate. The reduced size of the gate provides immediate advantage for high frequency, better linearity and higher breakdown voltage. The design of extremely small gate, below resolution of conventional optical lithography, was achieved by developing a process of ...
Samuel Mil'shtein, P. Kurlawala
openaire   +1 more source

Radiation Effects in Diamond pHEMTs

ECS Transactions, 2019
Field effect transistors (FET) based on diamond have 2-dimensional hole gas (2DHG) as conduction channel. In terms of usability in harsh environment, an important aspect of diamond-based FETs is its promise of radiation hardness. Because of high binding energy of diamond, diamond transistors are predicted to be radiation hard.
Aayush Thapa, David Shahin, Aris Christou   +2 more
openaire   +1 more source

Introduction to PHEMTs

1996
The development of the pseudomorphic high electron mobility transistor (PHEMT) was a result of the convergence of several factors. These factors included an interest in the behavior of quantum well structures (including superlattices) and development of the concept of modulation doping, the development of a crystal growth technique (molecular beam ...
J. V. DiLorenzo, B. D. Lauterwasser, M. Zaitlin   +2 more
openaire   +1 more source

Electron drift velocity in PHEMT

2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010
The temperature dependence of drift velocity-field characteristics of two-dimensional electron gas in Al-GaAs/InGaAs Pseudomorphic High Electron Mobility Transistor is determined. The saturation drift velocity in AlGaAs/InGaAs quantum well reduces from 1.55·107 to 1.3·107 cm/sec in a temperature range from 200 to 400K.
G. I. Ayzenshtat, V. G. Bozhkov, A. Y. Yushchenko   +2 more
openaire   +1 more source