The enhancement of high speed pHEMT device for IoT applications
, 2016 We report the enhancements on pHEMT epilayers to suite the high speed applications for IoT. Presented here are the DC and RF comparisons between XMBE #109 as the baseline of high speed pHEMT and VMBE #2100 as the enhanced epitaxial layer.
Ahmad, N. +15 more
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The Analysis of HBT and PHEMT Power Devices
, 2014 隨著無線通訊的蓬勃發展，對功率放大器的要求，除了輸出功率、高附加功率外，高線性度的要求也愈來愈重要。對功率放大器的效能而言，影響最大的莫過於功率元件本身。目前功率元件中又以PHEMT和HBT應用最廣。故本篇論文針對PHEMT和HBT二種重要的功率元件做功率上的量測。並對增益壓縮機制和不同負載阻抗作分析和了解。 本論文分為三個部份，第一部份主要為介紹功率量測的原理以及負載阻抗的一些基本觀念。第二部份則分析PHEMT的增益壓縮機制如膝部電壓、夾止電壓、崩潰電壓 ...
Peng, AnSam, 彭安賢
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Design and Realisation of a pHEMT Diode MMIC Power Limiter using 3D GaAs Multilayer CPW Technology
, 2015 Design and Realisation of a pHEMT Diode MMIC Power Limiter using 3D GaAs Multilayer CPW ...
Mohammad A. Alim +11 more
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Design of an X-band high efficiency continuous-mode power amplifier
Dianzi Jishu YingyongTo improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process ...
Liu Hanxiao +3 more
doaj +1 more source
Optimization of HBT/pHEMT integration technology
, 2010 The InGaP Heterojunction Bipolor Transistors (HBTs) become known as the dominant technology in handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of enhance/depletion ...
Tu, Min-Chang
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Design of Medium Power Amplifier Using GaAs PHEMT Technology for Wireless Applications
, 2012 This paper presents the design of single-stage and two-stage medium power amplifiers (MPAs) using GaAs PHEMT technology for the wireless applications. The single-stage MPA was designed using 0.15 µm GaAs PHEMT technology to be operated at 3.5 GHz whereas
Amiza Rasmi
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Comprehensive study on gate recess step for the fabrication of high-speed InGaAs/InAlAs/InP pHEMT
, 2017 We report a comprehensive etching study on the gate recess step for the fabrication of the novel high speed pHEMT devices. The experiments focused on the elimination of 'hump' structure as a result of an incomplete etching process at the InGaAs cap layer.
Ahmad, N. +7 more
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Envelope Factorization with Partial Elimination and Recombination, EF-PER, a New Linear RF Architecture [PDF]
Radioengineering, 2015 In this paper, a new architecture for efficient linear radio frequency transmitters is proposed; it includes envelope-tracking (ET) and envelope-elimination-and-restoration (EER) architectures as special instances.
A. Diet, G. Baudoin, S. Lasaulce
doaj
Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses. [PDF]
Sci Rep, 2022 Zhao J +5 more
europepmc +1 more source
A ku-band phemt mmic high power amplifier design
, 2014 Cataloged from PDF version of article.Includes bibliographical references leaves 65-67.Power amplifiers are regarded as the one of the most important part of the radar and communication systems.
Değirmenci, Ahmet
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