Безопасность информационных технологийThis work is focused on the development and investigation of a planar diode element based on a thin tantalum nitride film and Ni/Ge/Au contact metallization for use in microwave monolithic integrated circuits (MMICs).
Konstantin S. Alekseev +5 more
doaj +1 more source
A Novel Electrostatic Discharge (ESD) Protection Circuit in D-Mode pHEMT Technology
, 2012 Electrostatic discharge (ESD) protection structures in the D-Mode GaAs HEMT technology are commonly constructed using either stacked Schottky diode or Single-Gate clamp.
Bin Hou +9 more
core +1 more source
Etude des performances d’un transistor Pseudomorphique à base de AlGaAs/InGaAs/GaAs (PHEMT) [PDF]
, 2014 L’objectif de ce travail est de concevoir et étudier les performances de transistor PHEMT AlGaAs/InGaAs/GaAs. Cette étude est menée à l’aide de simulateur SILVACO, et nous avons obtient des bonnes résultats, il serait souhaitable d’approfondir encore ...
Sebbati, Naima
core +1 more source
Large-signal reliability of pHEMT power amplifier
, 2017 Power amplifier and pHEMT are measured to extract the X-parameters from PNA-X. The X-parameters model is used to simulate and the practical of the model could be validated.
Guo , Zhe-Zhi
core
Investigation And Trade Study On Hot Carrier Reliability Of The Phemt For Dc And Rf Performance [PDF]
, 2011 A unified study on the hot carrier reliability of the Pseudomorphic High Electron Mobility Transistor (PHEMT) is carried out through Sentaurus Device Simulation, measurement, and physical analyses.
Steighner, Jason
core
Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses. [PDF]
Sci Rep, 2022 Zhao J +5 more
europepmc +1 more source
Compact Bandwidth-Enhanced 180-Degree Phase Shifter Using Edge-Coupled Multi-Microstrip and Artificial Transmission Line. [PDF]
Micromachines (Basel), 2023 He D, Fan J, Zhu Z, Yuan Y, Yu Z.
europepmc +1 more source
, 2013 [[abstract]]A high-efficiency and high output power K-band frequency doubler using InGaAs PHEMT power device is developed, which features high fundamental frequency rejection, high efficiency, good conversion gain over wide bandwidth, and high output ...
Wen-Ren Lee,Shih-Fong Chao;Zuo-Min Tsai,Pin-Cheng Huang;Chun-Hsien Lien;Jeng-Han Tsai;Huei Wang +1 more
core
Coupling Effects Analysis and Suppression in a Highly Integrated Ka-Band Receiver Front-End MMIC for a Passive Millimeter-Wave Imager System. [PDF]
Sensors (Basel), 2022 Chen X, Hu A, Gong J, Altaf A, Miao J.
europepmc +1 more source
The Design of a 1-6 GHz Broadband Double-Balanced Mixer. [PDF]
Micromachines (Basel), 2023 Wang Y, Tian J, Wang B, Wan L, Jin Z.
europepmc +1 more source