Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses. [PDF]
Sci Rep, 2022 Zhao J +5 more
europepmc +1 more source
Envelope Factorization with Partial Elimination and Recombination, EF-PER, a New Linear RF Architecture [PDF]
Radioengineering, 2015 In this paper, a new architecture for efficient linear radio frequency transmitters is proposed; it includes envelope-tracking (ET) and envelope-elimination-and-restoration (EER) architectures as special instances.
A. Diet, G. Baudoin, S. Lasaulce
doaj
Giant Carrier Mobility in Single Crystals of FeSb2
, 2008 We report the giant carrier mobility in single crystals of FeSb2. Nonlinear field dependence of Hall resistivity is well described with the two-carrier model. Maximum mobility values in high mobility band reach ~10^5 cm^2/Vs at 8 K, and are ~10^2 cm^2/Vs
Aeppli G. +3 more
core +1 more source
Compact Bandwidth-Enhanced 180-Degree Phase Shifter Using Edge-Coupled Multi-Microstrip and Artificial Transmission Line. [PDF]
Micromachines (Basel), 2023 He D, Fan J, Zhu Z, Yuan Y, Yu Z.
europepmc +1 more source
A 20–40 GHz Harmonic Rejection Enhanced Frequency Doubler in 150 nm GaAs p-HEMT
IEEE AccessThis paper presents a broadband monolithic microwave integrated circuit (MMIC) frequency doubler within a 20-40GHz frequency operation range in a $0.15\mu $ m GaAs p-HEMT process.
Fengyun Chen +3 more
doaj +1 more source
Coupling Effects Analysis and Suppression in a Highly Integrated Ka-Band Receiver Front-End MMIC for a Passive Millimeter-Wave Imager System. [PDF]
Sensors (Basel), 2022 Chen X, Hu A, Gong J, Altaf A, Miao J.
europepmc +1 more source
IEEE AccessThis paper presents an inductorless design methodology for compact single-pole double-throw (SPDT) switches in Sub-6 GHz applications. To achieve compactness and meet key performance metrics below 5.0 GHz, the methodology focuses on optimizing the trade ...
Jaehyun Kwon +3 more
doaj +1 more source
The Design of a 1-6 GHz Broadband Double-Balanced Mixer. [PDF]
Micromachines (Basel), 2023 Wang Y, Tian J, Wang B, Wan L, Jin Z.
europepmc +1 more source
A 66-76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application. [PDF]
Micromachines (Basel), 2022 Zhou P +5 more
europepmc +1 more source
The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects [PDF]
, 2011 2010 marked the 30th anniversary of the High-Electron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology.
del Alamo, Jesus A.
core +1 more source