Results 131 to 140 of about 269 (178)
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Applications of MBE grown PHEMTs
Journal of Crystal Growth, 1997In the last decade pseudomorphic high electron mobility transistors (PHEMTs) have gone from a laboratory curiosity with unique low-noise performance to a high-volume commercial product for a variety of power and low-noise applications. At Raytheon Microelectronics, we currently use several thousand 4 in PHEMT wafers per year and expect this quantity to
J.V. DiLorenzo +2 more
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Prepared for GaAs PHEMT Material
Advanced Materials Research, 2012In this paper, GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE), The optimal parameters are determined by studying the impact of the barrier layer thickness, spacer layer thickness, Al composition of the barrier layer and the spacer layer , the channel thickness and channel In composition on Ns and μn.
Yan Lei Li, Rui Xia Yang
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Using Channel Physical Relationships in pHEMT Modeling
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020In this paper, we establish relationships of a few key process control monitors (PCMs) based on device physics and a design of experiment (DOE); these relations can simplify the pHEMT device model and increase its accuracy.
Yingying Yang +3 more
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Simulation of the temperature injection PHEMT
ICMMT 4th International Conference on, Proceedings Microwave and Millimeter Wave Technology, 2004., 2005A new microwave device model is brought out and simulated, which is called TI-PHEMT. The maximum extrinsic transconductance at high temperature increases significantly and therefore the microwave performance of HEMT at high temperature is increased. A new concept "temperature injection" is put forward to explain the reason.
null Song Di +2 more
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On state breakdown in PHEMTs and its temperature dependence
Microelectronics Reliability, 2005Abstract This work shows results of temperature-dependent (from −40 °C to 140 °C) on-state breakdown characterization of commercial PHEMTs from two vendors. Our data shows that in both samples impact ionization in the channel dominates the breakdown phenomenon and that a classical and simple analytical model can describe it with good accuracy.
COVA, Paolo +2 more
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High-performance Power Phemt For Wireless Communications
27th European Microwave Conference and Exhibition, 1997A low-cost 0.7 ?m gate power pseudoinorplhic high-electron-mobility transistor (PHEMT) process was developed. PHEMT structure, etch profile and passivation conditions were optimized to yield a device with high breakdown combined with minimal gate lag. A 2 mm PHEMT exhibits dc Idss.
Y. Tkachenko +4 more
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Microwave and Optical Technology Letters, 2005
AbstractA wide tuning range and high‐output‐power 26‐GHz pHEMT voltage‐controlled oscillator (VCO) MMIC based on a 0.25‐μm GaAs pHEMT process is presented. The active‐biasing technique has been adopted to reduce the chip size and to increase the bandwidth of operation, and maximum negative resistance has been chosen in order to obtain high output power.
Yu Wen +3 more
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AbstractA wide tuning range and high‐output‐power 26‐GHz pHEMT voltage‐controlled oscillator (VCO) MMIC based on a 0.25‐μm GaAs pHEMT process is presented. The active‐biasing technique has been adopted to reduce the chip size and to increase the bandwidth of operation, and maximum negative resistance has been chosen in order to obtain high output power.
Yu Wen +3 more
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Development of a microwave PHEMT device model
42nd Midwest Symposium on Circuits and Systems (Cat. No.99CH36356), 2003Many microwave circuits utilize the nonlinear properties of solid state microwave devices in their designs. The Pseudomorphic High Electron Mobility Transistor (PHEMT) provides a high performance, low noise and low power consumption active device for use in these applications.
B. Huang, G.R. Branner, D.G. Thomas
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A 3.5GHz GaAs pHEMT Power Amplifier
2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018In this paper, a monolithic integrated power amplifier based on 0.25um GaAs pHEMT process working in 3.36GHz-3.65GHz is designed, fabricated and measured. Integrated microstrip line is used as the passive load of the power stage; input and output LC matching network are designed.
Linzhi Liu +3 more
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InGaP PHEMTs for wireless power applications
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2002This paper shows that we have successfully fabricated a InGaP PHEMT device with a tight threshold voltage distribution of 22 mV by using InGaP as barrier layer material. Fabricated device performance is similar to our standard AlGaAs PHEMT for low voltage operation.
E. Lan, B. Pitts, M. Mikhov, O. Hartin
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