Results 151 to 160 of about 269 (178)

Improved precision nonlinear PHEMT models

1998 Midwest Symposium on Circuits and Systems (Cat. No. 98CB36268), 2002
This paper provides a highly efficient procedure for developing precision "global" nonlinear PHEMT models. The process is shown to provide a single set of parameters which produce very good agreement between measured and modeled PHEMT I/sub d/, V/sub ds/, g/sub m/ and g/sub d/ characteristics.
D.G. Thomas, G.R. Branner, B. Huang
openaire   +1 more source

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2017
In this paper, an approach to the design of broadband HEMT LNA is proposed, based on the selection of the transistor type adequate to the operation band. By way of the L-band amplifier, the feasibility of ultra-low-noise matching of general-purpose FET is shown.
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Low cost Ka-band 7W GaAs PHEMT based HPA with GaN PHEMT equivalent performance

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015
This paper describes a very low cost MMIC high power amplifier (HPA) with output power of over 7W. The MMIC was fabricated using a GaAs PHEMT process with a state-of-the-art compact die area of 13.7mm2. The HPA MMIC contains a phase and amplitude compensated output power combiner and super low loss phase compensated inter-stage matching networks.
openaire   +1 more source

Quantization Conditions for Variable Operations of pHEMT

AIP Conference Proceedings, 2005
The performance of pHEMTs is defined by the shape of the quantum well along the channel, as well as by the set of available energy levels in 2DEG and position of Quasi Fermi Level (QFL). Existence of an excessive electric field at the drain end of the channel is a reason for many events that downgrade pHEMT performance.
openaire   +1 more source

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Microelectronic Engineering, 2021
Md Abdul Kaium Khan, Mohammad Abdul Alim, Christophe Gaquiere   +2 more
exaly  

A Wideband 6-Bit Digital Attenuator in a GaAs pHEMT MMIC

Electronics (Switzerland), 2022
Yanyan Liu, Xiubo Liu, Dongning Hao
exaly  

Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature

Electronics (Switzerland), 2022
Qian Lin, Haifeng Wu, Lining Jia
exaly  

Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

Electronics (Switzerland), 2021
Artem Popov, Dmitry Bragin, Igor Dobush   +2 more
exaly  

Charge Storage Effects in PHEMTs

Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, 1996
Fritz Schuermeyer, Charles Cerny, Chris Bozada   +2 more
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Race PHEMT MMICs

III-Vs Review, 1994
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