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Radiation Effects in Diamond pHEMTs
ECS Transactions, 2019Field effect transistors (FET) based on diamond have 2-dimensional hole gas (2DHG) as conduction channel. In terms of usability in harsh environment, an important aspect of diamond-based FETs is its promise of radiation hardness. Because of high binding energy of diamond, diamond transistors are predicted to be radiation hard.
Aayush Thapa +2 more
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1996
The development of the pseudomorphic high electron mobility transistor (PHEMT) was a result of the convergence of several factors. These factors included an interest in the behavior of quantum well structures (including superlattices) and development of the concept of modulation doping, the development of a crystal growth technique (molecular beam ...
J. V. DiLorenzo +2 more
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The development of the pseudomorphic high electron mobility transistor (PHEMT) was a result of the convergence of several factors. These factors included an interest in the behavior of quantum well structures (including superlattices) and development of the concept of modulation doping, the development of a crystal growth technique (molecular beam ...
J. V. DiLorenzo +2 more
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Electron drift velocity in PHEMT
2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010The temperature dependence of drift velocity-field characteristics of two-dimensional electron gas in Al-GaAs/InGaAs Pseudomorphic High Electron Mobility Transistor is determined. The saturation drift velocity in AlGaAs/InGaAs quantum well reduces from 1.55·107 to 1.3·107 cm/sec in a temperature range from 200 to 400K.
G. I. Ayzenshtat +2 more
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Applications of MBE grown PHEMTs
Journal of Crystal Growth, 1997In the last decade pseudomorphic high electron mobility transistors (PHEMTs) have gone from a laboratory curiosity with unique low-noise performance to a high-volume commercial product for a variety of power and low-noise applications. At Raytheon Microelectronics, we currently use several thousand 4 in PHEMT wafers per year and expect this quantity to
J.V. DiLorenzo +2 more
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Prepared for GaAs PHEMT Material
Advanced Materials Research, 2012In this paper, GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE), The optimal parameters are determined by studying the impact of the barrier layer thickness, spacer layer thickness, Al composition of the barrier layer and the spacer layer , the channel thickness and channel In composition on Ns and μn.
Yan Lei Li, Rui Xia Yang
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Using Channel Physical Relationships in pHEMT Modeling
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020In this paper, we establish relationships of a few key process control monitors (PCMs) based on device physics and a design of experiment (DOE); these relations can simplify the pHEMT device model and increase its accuracy.
Yingying Yang +3 more
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Simulation of the temperature injection PHEMT
ICMMT 4th International Conference on, Proceedings Microwave and Millimeter Wave Technology, 2004., 2005A new microwave device model is brought out and simulated, which is called TI-PHEMT. The maximum extrinsic transconductance at high temperature increases significantly and therefore the microwave performance of HEMT at high temperature is increased. A new concept "temperature injection" is put forward to explain the reason.
null Song Di +2 more
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On state breakdown in PHEMTs and its temperature dependence
Microelectronics Reliability, 2005Abstract This work shows results of temperature-dependent (from −40 °C to 140 °C) on-state breakdown characterization of commercial PHEMTs from two vendors. Our data shows that in both samples impact ionization in the channel dominates the breakdown phenomenon and that a classical and simple analytical model can describe it with good accuracy.
COVA, Paolo +2 more
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High-performance Power Phemt For Wireless Communications
27th European Microwave Conference and Exhibition, 1997A low-cost 0.7 ?m gate power pseudoinorplhic high-electron-mobility transistor (PHEMT) process was developed. PHEMT structure, etch profile and passivation conditions were optimized to yield a device with high breakdown combined with minimal gate lag. A 2 mm PHEMT exhibits dc Idss.
Y. Tkachenko +4 more
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Microwave and Optical Technology Letters, 2005
AbstractA wide tuning range and high‐output‐power 26‐GHz pHEMT voltage‐controlled oscillator (VCO) MMIC based on a 0.25‐μm GaAs pHEMT process is presented. The active‐biasing technique has been adopted to reduce the chip size and to increase the bandwidth of operation, and maximum negative resistance has been chosen in order to obtain high output power.
Yu Wen +3 more
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AbstractA wide tuning range and high‐output‐power 26‐GHz pHEMT voltage‐controlled oscillator (VCO) MMIC based on a 0.25‐μm GaAs pHEMT process is presented. The active‐biasing technique has been adopted to reduce the chip size and to increase the bandwidth of operation, and maximum negative resistance has been chosen in order to obtain high output power.
Yu Wen +3 more
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