Results 171 to 180 of about 2,069 (221)

Channel temperature measurement of PHEMT by means of optical probes

Electronics Letters, 2003
A novel technique for precise temperature measurement of high power PHEMTs is presented. The method, based on the measurement of photogenerated current, is used to extract the temperature of the PHEMT channel.
Aldo Di Carlo, M Peroni, C Lanzieri
exaly   +2 more sources

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A pHEMT power amplfier with an on-off modulator

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2013
This paper presents a transformer-based switching-type RF power amplifier with an on-off modulator using a 0.15-μm pHEMT process. In order to overcome the inherent limitation of ground potential at the source node of transistor models in this pHEMT process, an on-off modulator was designed for the proposed pulse-modulated polar transmitter system ...
Hao-Shun Yang, Li-Wei Lin, Yi-Jan Emery Chen   +2 more
openaire   +1 more source

Patterning 0.05 μm gate on pHEMT

Microelectronics Journal, 2009
The pseudomorphic high electron mobility transistor (pHEMT) was designed with 0.05@mm gate. The reduced size of the gate provides immediate advantage for high frequency, better linearity and higher breakdown voltage. The design of extremely small gate, below resolution of conventional optical lithography, was achieved by developing a process of ...
Samuel Mil'shtein, P. Kurlawala
openaire   +1 more source

Applications of MBE grown PHEMTs

Journal of Crystal Growth, 1997
In the last decade pseudomorphic high electron mobility transistors (PHEMTs) have gone from a laboratory curiosity with unique low-noise performance to a high-volume commercial product for a variety of power and low-noise applications. At Raytheon Microelectronics, we currently use several thousand 4 in PHEMT wafers per year and expect this quantity to
J.V. DiLorenzo, B. Lauterwasser, M.P. Zaitlin   +2 more
openaire   +1 more source

Radiation Effects in Diamond pHEMTs

ECS Transactions, 2019
Field effect transistors (FET) based on diamond have 2-dimensional hole gas (2DHG) as conduction channel. In terms of usability in harsh environment, an important aspect of diamond-based FETs is its promise of radiation hardness. Because of high binding energy of diamond, diamond transistors are predicted to be radiation hard.
Aayush Thapa, David Shahin, Aris Christou   +2 more
openaire   +1 more source

Introduction to PHEMTs

1996
The development of the pseudomorphic high electron mobility transistor (PHEMT) was a result of the convergence of several factors. These factors included an interest in the behavior of quantum well structures (including superlattices) and development of the concept of modulation doping, the development of a crystal growth technique (molecular beam ...
J. V. DiLorenzo, B. D. Lauterwasser, M. Zaitlin   +2 more
openaire   +1 more source

Electron drift velocity in PHEMT

2010 20th International Crimean Conference "Microwave & Telecommunication Technology", 2010
The temperature dependence of drift velocity-field characteristics of two-dimensional electron gas in Al-GaAs/InGaAs Pseudomorphic High Electron Mobility Transistor is determined. The saturation drift velocity in AlGaAs/InGaAs quantum well reduces from 1.55·107 to 1.3·107 cm/sec in a temperature range from 200 to 400K.
G. I. Ayzenshtat, V. G. Bozhkov, A. Y. Yushchenko   +2 more
openaire   +1 more source

Prepared for GaAs PHEMT Material

Advanced Materials Research, 2012
In this paper, GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE), The optimal parameters are determined by studying the impact of the barrier layer thickness, spacer layer thickness, Al composition of the barrier layer and the spacer layer , the channel thickness and channel In composition on Ns and μn.
Yan Lei Li, Rui Xia Yang
openaire   +1 more source

Using Channel Physical Relationships in pHEMT Modeling

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020
In this paper, we establish relationships of a few key process control monitors (PCMs) based on device physics and a design of experiment (DOE); these relations can simplify the pHEMT device model and increase its accuracy.
Yingying Yang, Xiao Ping Li, Cristian Cismaru, Ravi Ramanathan   +3 more
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Simulation of the temperature injection PHEMT

ICMMT 4th International Conference on, Proceedings Microwave and Millimeter Wave Technology, 2004., 2005
A new microwave device model is brought out and simulated, which is called TI-PHEMT. The maximum extrinsic transconductance at high temperature increases significantly and therefore the microwave performance of HEMT at high temperature is increased. A new concept "temperature injection" is put forward to explain the reason.
null Song Di, null Chang-zhi Lu, null Xiao-dan Cai   +2 more
openaire   +1 more source