Results 191 to 200 of about 2,069 (221)

2.4GHz WLAN D-pHEMT LNA

2009 International Conference on Advanced Technologies for Communications, 2009
an integrated narrowband low noise amplifier in cascode topology has been developed for WLAN applications. Using WIN's 0.15µm pHEMT technology, the impedance matching, voltage gain, noise figure and 1dB compression point of the circuit are analyzed and optimized under specified power consumption. Results from the simulation under advanced design system(
null Zhang Qian, null Li Wenyuan, null Wang Zhigong, null Qian Cheng, null Zhang Xichang   +4 more
openaire   +1 more source

Mechanism for recoverable power drift in PHEMTs

IEEE Transactions on Electron Devices, 2000
A new degradation mechanism is proposed for output power drift under rf overdrive of pseudomorphic high electron mobility transistors (PHEMT's). Similar to the previously reported power-slump mechanism, the gradual reduction in output power is caused by a decrease in the peak drain current.
R.E. Leoni, J. Bao, J. Bu, X. Du, M.S. Shirokov, J.C.M. Hwang   +5 more
openaire   +1 more source

Progress on distributed resistance model for pHEMT

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), 2010
With increasing scale and complexity in pHEMT circuit and dimension shrinking in unit pHEMT devices, distributed effects are becoming more crucial than ever. During design of amplifiers, precise prediction of the resistances of a device is vital to simulation result due to the direct impact on impedance. This work reports a set of experiments utilizing
null Hong Yin, null Cejun Wei, null Yu Zhu, Alex Klimashov, Cindy Zhang, Dylan Bartle   +5 more
openaire   +1 more source

The design of high linearity pHEMT switches

2010 53rd IEEE International Midwest Symposium on Circuits and Systems, 2010
In this paper we present the effect of gate capacitors on 5 types of single pole single throw (SPST) switches. The designs were undertaken using the 0.8 um gate length GaAs pHEMT process from Skyworks and the analysis was done at 1GHz. We found that the gate capacitors could improve the linearity of 3 types of switches dramatically in the off state ...
Ning Lu, Robert J Weber
openaire   +1 more source

Intrinsic reliability of a 12V field plate pHEMT

Microelectronics Reliability, 2008
Abstract High voltage 12 V GaAs-based pHEMT devices are a commercial work horse for higher frequency infrastructure applications, including cable television, cellular base stations, and, potentially, WiMAX™ (worldwide interoperability for microwave access).
Craig A. Gaw, Thomas Arnold, Karen Moore
openaire   +1 more source

Analysis of an EEHEMT Model for InP pHEMTs

2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007
This paper summarizes the procedure of extracting the parameters of the agilent EEHEMT model for InP pHEMTs without using any expensive extraction software. For DC parameters, we analyzed the equations associated with the parameters, and established an effective extraction procedure.
Y. H. Chang, J. J. Chang
openaire   +1 more source

?????????? ?????????????????????? ?????????? ?? ???????????????????????????? ?????????????????????????? ?????????????????? ???? PHEMT ?? ???????????????????????? ??????????????????

2017
In this paper, an approach to the design of broadband HEMT LNA is proposed, based on the selection of the transistor type adequate to the operation band. By way of the L-band amplifier, the feasibility of ultra-low-noise matching of general-purpose FET is shown.
openaire   +1 more source

Low cost Ka-band 7W GaAs PHEMT based HPA with GaN PHEMT equivalent performance

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015
This paper describes a very low cost MMIC high power amplifier (HPA) with output power of over 7W. The MMIC was fabricated using a GaAs PHEMT process with a state-of-the-art compact die area of 13.7mm2. The HPA MMIC contains a phase and amplitude compensated output power combiner and super low loss phase compensated inter-stage matching networks.
openaire   +1 more source

Intermodulation distortion in pHEMTS: modelling and measurement

IEE Colloquium on Solid State Power Amplification and Generation, 1996
This paper describes physical modelling and on-wafer measurement techniques for the characterisation of the intermodulation distortion of pHEMTs intended for millimeter-wave monolithic integrated circuits. (5 pages)
openaire   +1 more source

Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

Electronics (Switzerland), 2021
Igor M Dobush, I S Vasil'Evskii, Dmitry Bragin   +2 more
exaly