Results 191 to 200 of about 3,802 (219)

A 10GHz PHEMT Dielectric Resonator Oscillator

2006 International RF and Microwave Conference, 2006
In all microwave systems, oscillators represent the basic microwave energy source. The main problem in oscillator design is the phase noise. This paper will discuss the design and fabrication of a 10GHz parallel feedback type GaAs PHEMT dielectric resonator oscillator.
Nor Muzlifah Mahyuddin, Mohd Fadzil Ain, Syed Idris Syed Hassan, Mandeep Singh   +3 more
openaire   +1 more source

K-Band monolithic GaAs PHEMT amplifiers

2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522), 2000
This paper presents the designs and measurement results of several K-band monolithic microwave integrated circuits (MMIC) including 21-26 GHz amplifiers and 2-25 GHz distributed amplifiers. The MMIC chips are fabricated with a 0.2-/spl mu/m gate-length pseudomorphic (PM) GaAs-based HEMT MMIC technology, carried out by commercially available foundry.
Lin, Kun-You, Deng, Kuo-Liang, Kuo, Po-Wei, Yang, Shin-Der, Wang, Huei, Chu, Tah-Hsiung   +5 more
openaire   +2 more sources

Simulation of the temperature injection PHEMT

ICMMT 4th International Conference on, Proceedings Microwave and Millimeter Wave Technology, 2004., 2005
A new microwave device model is brought out and simulated, which is called TI-PHEMT. The maximum extrinsic transconductance at high temperature increases significantly and therefore the microwave performance of HEMT at high temperature is increased. A new concept "temperature injection" is put forward to explain the reason.
null Song Di, null Chang-zhi Lu, null Xiao-dan Cai   +2 more
openaire   +1 more source

Quantum Well Infrared Photodetector with pHEMT structure

Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials, 2004
This work was supported, in part, by KISTEP (under Nano-Structure Technology Projects and IMT2000 R&D donation support program) and the MOE BK21 ...
Joon Ho Oum, Uk Hyun Lee, Yong Hoon Kang, Jong Ryul Yang, Songcheol Hong   +4 more
openaire   +1 more source

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2017
In this paper, an approach to the design of broadband HEMT LNA is proposed, based on the selection of the transistor type adequate to the operation band. By way of the L-band amplifier, the feasibility of ultra-low-noise matching of general-purpose FET is shown.
openaire   +1 more source

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Microelectronic Engineering, 2021
Md. Abdul Kaium Khan, Prof Mohammad Abdul Alim, Christophe Gaquiere   +2 more
exaly  

Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

Electronics (Switzerland), 2021
Igor Dobush, Ivan S Vasil'evskii, Dmitry S Bragin   +2 more
exaly  

Race PHEMT MMICs

III-Vs Review, 1994
openaire   +1 more source

A broadband pHEMT image-reject mixer

2013 IEEE International Workshop on Electromagnetics, Applications and Student Innovation Competition, 2013
null Zhengyu Sun, null Yuepeng Yan
openaire   +1 more source

Charge Storage Effects in PHEMTs

Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, 1996
Fritz Schuermeyer, Charles Cerny, Chris Bozada   +2 more
openaire   +1 more source