Results 191 to 200 of about 2,882 (217)

2.4GHz WLAN D-pHEMT LNA

2009 International Conference on Advanced Technologies for Communications, 2009
an integrated narrowband low noise amplifier in cascode topology has been developed for WLAN applications. Using WIN's 0.15µm pHEMT technology, the impedance matching, voltage gain, noise figure and 1dB compression point of the circuit are analyzed and optimized under specified power consumption. Results from the simulation under advanced design system(
null Zhang Qian, null Li Wenyuan, null Wang Zhigong, null Qian Cheng, null Zhang Xichang   +4 more
openaire   +1 more source

Intrinsic reliability of a 12V field plate pHEMT

Microelectronics Reliability, 2008
Abstract High voltage 12 V GaAs-based pHEMT devices are a commercial work horse for higher frequency infrastructure applications, including cable television, cellular base stations, and, potentially, WiMAX™ (worldwide interoperability for microwave access).
Craig A. Gaw, Thomas Arnold, Karen Moore
openaire   +1 more source

Analysis of an EEHEMT Model for InP pHEMTs

2007 IEEE Conference on Electron Devices and Solid-State Circuits, 2007
This paper summarizes the procedure of extracting the parameters of the agilent EEHEMT model for InP pHEMTs without using any expensive extraction software. For DC parameters, we analyzed the equations associated with the parameters, and established an effective extraction procedure.
Y. H. Chang, J. J. Chang
openaire   +1 more source

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2017
In this paper, an approach to the design of broadband HEMT LNA is proposed, based on the selection of the transistor type adequate to the operation band. By way of the L-band amplifier, the feasibility of ultra-low-noise matching of general-purpose FET is shown.
openaire   +1 more source

Low cost Ka-band 7W GaAs PHEMT based HPA with GaN PHEMT equivalent performance

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015
This paper describes a very low cost MMIC high power amplifier (HPA) with output power of over 7W. The MMIC was fabricated using a GaAs PHEMT process with a state-of-the-art compact die area of 13.7mm2. The HPA MMIC contains a phase and amplitude compensated output power combiner and super low loss phase compensated inter-stage matching networks.
openaire   +1 more source

Development of a 0.15 μm GaAs pHEMT Process Design Kit for Low-Noise Applications

Electronics, 2021
Artem A Popov, Dmitry Bragin, Igor Dobush   +2 more
exaly  

Charge Storage Effects in PHEMTs

Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, 1996
Fritz Schuermeyer, Charles Cerny, Chris Bozada   +2 more
openaire   +1 more source

Experimental Insight Into the Temperature Effects on DC and Microwave Characteristics for a GaAs pHEMT in Multilayer 3-D MMIC Technology

International Journal of RF and Microwave Computer-Aided Engineering, 2020
Mohammad Abdul Alim, Giovanni Crupi, Ali A Rezazadeh   +2 more
exaly  

Race PHEMT MMICs

III-Vs Review, 1994
openaire   +1 more source

AlGaAs/InGaAs PHEMT栅电流参数退化模型研究

Wuli Xuebao/Acta Physica Sinica, 2013
Shi-wei Feng, Chun-Sheng Guo
exaly