Results 181 to 190 of about 2,069 (221)
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On state breakdown in PHEMTs and its temperature dependence
Microelectronics Reliability, 2005Abstract This work shows results of temperature-dependent (from −40 °C to 140 °C) on-state breakdown characterization of commercial PHEMTs from two vendors. Our data shows that in both samples impact ionization in the channel dominates the breakdown phenomenon and that a classical and simple analytical model can describe it with good accuracy.
Paolo Cova +2 more
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High-performance Power Phemt For Wireless Communications
27th European Microwave Conference and Exhibition, 1997A low-cost 0.7 ?m gate power pseudoinorplhic high-electron-mobility transistor (PHEMT) process was developed. PHEMT structure, etch profile and passivation conditions were optimized to yield a device with high breakdown combined with minimal gate lag. A 2 mm PHEMT exhibits dc Idss.
Y. Tkachenko +4 more
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Microwave and Optical Technology Letters, 2005
AbstractA wide tuning range and high‐output‐power 26‐GHz pHEMT voltage‐controlled oscillator (VCO) MMIC based on a 0.25‐μm GaAs pHEMT process is presented. The active‐biasing technique has been adopted to reduce the chip size and to increase the bandwidth of operation, and maximum negative resistance has been chosen in order to obtain high output power.
Yu Wen +3 more
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AbstractA wide tuning range and high‐output‐power 26‐GHz pHEMT voltage‐controlled oscillator (VCO) MMIC based on a 0.25‐μm GaAs pHEMT process is presented. The active‐biasing technique has been adopted to reduce the chip size and to increase the bandwidth of operation, and maximum negative resistance has been chosen in order to obtain high output power.
Yu Wen +3 more
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Development of a microwave PHEMT device model
42nd Midwest Symposium on Circuits and Systems (Cat. No.99CH36356), 2003Many microwave circuits utilize the nonlinear properties of solid state microwave devices in their designs. The Pseudomorphic High Electron Mobility Transistor (PHEMT) provides a high performance, low noise and low power consumption active device for use in these applications.
B. Huang, G.R. Branner, D.G. Thomas
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Analysis of Angelov model for 0.25μm pHEMTs
SPIE Proceedings, 2012This paper explains the extraction of parameters of Angelov’s model for 0.25μm GaAs pHEMT (2x100μm) devices using extensive measurements without using any expensive extraction software. For DC parameters, we analyzed the equations associated with the parameters and established an effective extraction procedure.
Deepti Mongia +5 more
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A 3.5GHz GaAs pHEMT Power Amplifier
2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018In this paper, a monolithic integrated power amplifier based on 0.25um GaAs pHEMT process working in 3.36GHz-3.65GHz is designed, fabricated and measured. Integrated microstrip line is used as the passive load of the power stage; input and output LC matching network are designed.
Linzhi Liu +3 more
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InGaP PHEMTs for wireless power applications
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2002This paper shows that we have successfully fabricated a InGaP PHEMT device with a tight threshold voltage distribution of 22 mV by using InGaP as barrier layer material. Fabricated device performance is similar to our standard AlGaAs PHEMT for low voltage operation.
E. Lan, B. Pitts, M. Mikhov, O. Hartin
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Pulse measurements quantify dispersion in PHEMTs
1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167), 2002Pulsed-bias measurements provide the necessary information for a measurement-based model capable of predicting dynamic anomalies in PHEMT devices. The measured behaviour is separated into thermal and 'trapping' effects. After de-embedding the thermal effects, the device behaviour is found to be defined in terms of two distinct pulsed characteristics ...
A.E. Parker, D.E. Root
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ESD protection for pHEMT MMIC amplifiers
IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05., 2005In this paper, we discuss ESD characterization data on typical circuit elements used in GaAs pHEMT MMIC amplifiers. At microwave and mm-wave frequencies, basic circuit performance considerations drive design decisions. Human body model (HBM) data for basic circuit elements can provide guidance for layout and topology trade-offs to improve ESD ...
J.M. Beall, G.I. Drandova
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Over-temperature noise modeling of PHEMTs
IEEE NTC,Conference Proceedings Microwave Systems Conference, 2002A new procedure is presented for modeling the variations with temperature of the noise source coefficients related to the gate and the drain of a field effect transistor (FET). The experimental results obtained for a temperature range over -60/spl deg/C to 140/spl deg/C are compared to two recent similar studies, using a pseudomorphic HEMT.
A. Boudiaf, C. Dubon-Chevallier
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