Results 181 to 190 of about 2,882 (217)

Development of a microwave PHEMT device model

42nd Midwest Symposium on Circuits and Systems (Cat. No.99CH36356), 2003
Many microwave circuits utilize the nonlinear properties of solid state microwave devices in their designs. The Pseudomorphic High Electron Mobility Transistor (PHEMT) provides a high performance, low noise and low power consumption active device for use in these applications.
B. Huang, G.R. Branner, D.G. Thomas
openaire   +1 more source

Mechanism for recoverable power drift in PHEMTs

IEEE Transactions on Electron Devices, 2000
A new degradation mechanism is proposed for output power drift under rf overdrive of pseudomorphic high electron mobility transistors (PHEMT's). Similar to the previously reported power-slump mechanism, the gradual reduction in output power is caused by a decrease in the peak drain current.
R.E. Leoni, J. Bao, J. Bu, X. Du, M.S. Shirokov, J.C.M. Hwang   +5 more
openaire   +1 more source

Progress on distributed resistance model for pHEMT

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), 2010
With increasing scale and complexity in pHEMT circuit and dimension shrinking in unit pHEMT devices, distributed effects are becoming more crucial than ever. During design of amplifiers, precise prediction of the resistances of a device is vital to simulation result due to the direct impact on impedance. This work reports a set of experiments utilizing
null Hong Yin, null Cejun Wei, null Yu Zhu, Alex Klimashov, Cindy Zhang, Dylan Bartle   +5 more
openaire   +1 more source

The design of high linearity pHEMT switches

2010 53rd IEEE International Midwest Symposium on Circuits and Systems, 2010
In this paper we present the effect of gate capacitors on 5 types of single pole single throw (SPST) switches. The designs were undertaken using the 0.8 um gate length GaAs pHEMT process from Skyworks and the analysis was done at 1GHz. We found that the gate capacitors could improve the linearity of 3 types of switches dramatically in the off state ...
Ning Lu, Robert J Weber
openaire   +1 more source

Analysis of Angelov model for 0.25μm pHEMTs

SPIE Proceedings, 2012
This paper explains the extraction of parameters of Angelov’s model for 0.25μm GaAs pHEMT (2x100μm) devices using extensive measurements without using any expensive extraction software. For DC parameters, we analyzed the equations associated with the parameters and established an effective extraction procedure.
Deepti Mongia, Meena Mishra, Ashok Kumar, V. R. Balakrishnan, Harishankar Sharma, B. K. Sehgal   +5 more
openaire   +1 more source

A 3.5GHz GaAs pHEMT Power Amplifier

2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018
In this paper, a monolithic integrated power amplifier based on 0.25um GaAs pHEMT process working in 3.36GHz-3.65GHz is designed, fabricated and measured. Integrated microstrip line is used as the passive load of the power stage; input and output LC matching network are designed.
Linzhi Liu, Qianyin Xiang, Mingye Fu, Quanyuan Feng   +3 more
openaire   +1 more source

InGaP PHEMTs for wireless power applications

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2002
This paper shows that we have successfully fabricated a InGaP PHEMT device with a tight threshold voltage distribution of 22 mV by using InGaP as barrier layer material. Fabricated device performance is similar to our standard AlGaAs PHEMT for low voltage operation.
E. Lan, B. Pitts, M. Mikhov, O. Hartin
openaire   +1 more source

Pulse measurements quantify dispersion in PHEMTs

1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167), 2002
Pulsed-bias measurements provide the necessary information for a measurement-based model capable of predicting dynamic anomalies in PHEMT devices. The measured behaviour is separated into thermal and 'trapping' effects. After de-embedding the thermal effects, the device behaviour is found to be defined in terms of two distinct pulsed characteristics ...
A.E. Parker, D.E. Root
openaire   +1 more source

ESD protection for pHEMT MMIC amplifiers

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05., 2005
In this paper, we discuss ESD characterization data on typical circuit elements used in GaAs pHEMT MMIC amplifiers. At microwave and mm-wave frequencies, basic circuit performance considerations drive design decisions. Human body model (HBM) data for basic circuit elements can provide guidance for layout and topology trade-offs to improve ESD ...
J.M. Beall, G.I. Drandova
openaire   +1 more source

Over-temperature noise modeling of PHEMTs

IEEE NTC,Conference Proceedings Microwave Systems Conference, 2002
A new procedure is presented for modeling the variations with temperature of the noise source coefficients related to the gate and the drain of a field effect transistor (FET). The experimental results obtained for a temperature range over -60/spl deg/C to 140/spl deg/C are compared to two recent similar studies, using a pseudomorphic HEMT.
A. Boudiaf, C. Dubon-Chevallier
openaire   +1 more source