Results 161 to 170 of about 2,882 (217)

Terahertz integrated sensing and mobile communications empowered by a 220-GHz-band portable device. [PDF]

Nat Commun
Wang G, Li M, Liu Q, Zang J, Li O, Du X, Xu L, Tao M, Han C.   +8 more
europepmc   +1 more source

Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process. [PDF]

Micromachines (Basel)
Luo J, Fan Y, Wan J, Sun X, Liang X.
europepmc   +1 more source

Characterization and Analysis of pHEMT Devices

, 1996
openaire   +1 more source

Design of a Fixed IF Down-Conversion Double-Balanced Mixer for UHF Band Applications. [PDF]

Sensors (Basel)
Kared T, Silaghi H, Rudolph M, Silaghi A, Rohde UL.   +4 more
europepmc   +1 more source

2DEG Transport Properties Over Temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Microelectronic Engineering, 2021
International audienceFor the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial.
Md Abdul Kaium Khan, Mohammad Abdul Alim, Christophe Gaquière   +2 more
exaly   +2 more sources

A 5G Mm-Wave Compact Voltage-Controlled Oscillator in 0.25 µm pHEMT Technology [PDF]

International Journal of Electrical and Computer Engineering, 2021
A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It is designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry and it is based on pHEMT varactors in order to
Mohammed Fattah, Moulhime El Bekkali, Said Mazer   +2 more
exaly   +2 more sources

Channel Temperature Measurement of PHEMT by Means of Optical Probes

Electronics Letters, 2003
A novel technique for precise temperature measurement of high power PHEMTs is presented. The method, based on the measurement of photogenerated current, is used to extract the temperature of the PHEMT channel.
Aldo Di Carlo, Enrico Zanoni, Paolo Lugli   +2 more
exaly   +2 more sources

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Off‐state and on‐state breakdown of GaAs MESFET, PHEMT and Power PHEMT

physica status solidi c, 2006
We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier design operating in non linear conditions with operating level close to the maximum operating conditions ...
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean‐Luc Muraro   +4 more
openaire   +1 more source

A pHEMT power amplfier with an on-off modulator

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2013
This paper presents a transformer-based switching-type RF power amplifier with an on-off modulator using a 0.15-μm pHEMT process. In order to overcome the inherent limitation of ground potential at the source node of transistor models in this pHEMT process, an on-off modulator was designed for the proposed pulse-modulated polar transmitter system ...
Hao-Shun Yang, Li-Wei Lin, Yi-Jan Emery Chen   +2 more
openaire   +2 more sources

Patterning 0.05 μm gate on pHEMT

Microelectronics Journal, 2009
The pseudomorphic high electron mobility transistor (pHEMT) was designed with 0.05@mm gate. The reduced size of the gate provides immediate advantage for high frequency, better linearity and higher breakdown voltage. The design of extremely small gate, below resolution of conventional optical lithography, was achieved by developing a process of ...
Samuel Mil'shtein, P. Kurlawala
openaire   +2 more sources