Results 161 to 170 of about 3,802 (219)

Terahertz integrated sensing and mobile communications empowered by a 220-GHz-band portable device. [PDF]

Nat Commun
Wang G, Li M, Liu Q, Zang J, Li O, Du X, Xu L, Tao M, Han C.   +8 more
europepmc   +1 more source

Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process. [PDF]

Micromachines (Basel)
Luo J, Fan Y, Wan J, Sun X, Liang X.
europepmc   +1 more source

Design of a Fixed IF Down-Conversion Double-Balanced Mixer for UHF Band Applications. [PDF]

Sensors (Basel)
Kared T, Silaghi H, Rudolph M, Silaghi A, Rohde UL.   +4 more
europepmc   +1 more source

High-efficiency enhancement-mode PHEMT FET

III-Vs Review, 2003
openaire   +1 more source

A fully integrated harmonic injection and envelope-tracking architecture to extend the linearity of RF power amplifiers under high PAPR. [PDF]

Sci Rep
Ziraksaz F, Hassanzadeh A.
europepmc   +1 more source

A Reformed PSO-Based High Linear Optimized Up-Conversion Mixer for Radar Application. [PDF]

Sensors (Basel)
Delwar TS, Aras U, Siddique A, Lee Y, Ryu JY.   +4 more
europepmc   +1 more source

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Applications of MBE grown PHEMTs

Journal of Crystal Growth, 1997
In the last decade pseudomorphic high electron mobility transistors (PHEMTs) have gone from a laboratory curiosity with unique low-noise performance to a high-volume commercial product for a variety of power and low-noise applications. At Raytheon Microelectronics, we currently use several thousand 4 in PHEMT wafers per year and expect this quantity to
J.V. DiLorenzo, B. Lauterwasser, M.P. Zaitlin   +2 more
openaire   +1 more source

Off‐state and on‐state breakdown of GaAs MESFET, PHEMT and Power PHEMT

physica status solidi c, 2006
We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier design operating in non linear conditions with operating level close to the maximum operating conditions ...
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean‐Luc Muraro   +4 more
openaire   +1 more source

2.4GHz WLAN D-pHEMT LNA

2009 International Conference on Advanced Technologies for Communications, 2009
an integrated narrowband low noise amplifier in cascode topology has been developed for WLAN applications. Using WIN's 0.15µm pHEMT technology, the impedance matching, voltage gain, noise figure and 1dB compression point of the circuit are analyzed and optimized under specified power consumption. Results from the simulation under advanced design system(
null Zhang Qian, null Li Wenyuan, null Wang Zhigong, null Qian Cheng, null Zhang Xichang   +4 more
openaire   +1 more source

Prepared for GaAs PHEMT Material

Advanced Materials Research, 2012
In this paper, GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE), The optimal parameters are determined by studying the impact of the barrier layer thickness, spacer layer thickness, Al composition of the barrier layer and the spacer layer , the channel thickness and channel In composition on Ns and μn.
Yan Lei Li, Rui Xia Yang
openaire   +1 more source