Results 161 to 170 of about 2,069 (221)

A Compact and Tunable Active Inductor-Based Bandpass Filter with High Dynamic Range for UHF Band Applications. [PDF]

Sensors (Basel)
Saad S, Haddad F, Ben Hammadi A.
europepmc   +1 more source

A Low-Noise Hybrid-Integrated Balanced Homodyne Receiver with 2.5 GHz Bandwidth and 15 dB Quantum Shot Noise Clearance. [PDF]

Micromachines (Basel)
Yang Y, Cheng C, Yang R, Ren Y, Bao S, Xue J, Lai H, Wang B.   +7 more
europepmc   +1 more source

Advanced Dielectric Resonator Antenna Technology for 5G and 6G Applications. [PDF]

Sensors (Basel)
Zhang Y, Ogurtsov S, Vasilev V, Kishk AA, Caratelli D.   +4 more
europepmc   +1 more source

Temperature Characteristics Modeling for GaN PA Based on PSO-ELM. [PDF]

Micromachines (Basel)
Lin Q, Wang M.
europepmc   +1 more source

Terahertz integrated sensing and mobile communications empowered by a 220-GHz-band portable device. [PDF]

Nat Commun
Wang G, Li M, Liu Q, Zang J, Li O, Du X, Xu L, Tao M, Han C.   +8 more
europepmc   +1 more source

Ultra-Wideband Transformer Feedback Monolithic Microwave Integrated Circuit Power Amplifier Design on 0.25 μm GaN Process. [PDF]

Micromachines (Basel)
Luo J, Fan Y, Wan J, Sun X, Liang X.
europepmc   +1 more source

Design of a Fixed IF Down-Conversion Double-Balanced Mixer for UHF Band Applications. [PDF]

Sensors (Basel)
Kared T, Silaghi H, Rudolph M, Silaghi A, Rohde UL.   +4 more
europepmc   +1 more source

A Reformed PSO-Based High Linear Optimized Up-Conversion Mixer for Radar Application. [PDF]

Sensors (Basel)
Delwar TS, Aras U, Siddique A, Lee Y, Ryu JY.   +4 more
europepmc   +1 more source

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Microelectronic Engineering, 2021
International audienceFor the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial.
Md Abdul Kaium Khan, Mohammad Abdul Alim, C Gaquiere   +2 more
exaly   +2 more sources

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Off‐state and on‐state breakdown of GaAs MESFET, PHEMT and Power PHEMT

physica status solidi c, 2006
We present a comparison of the breakdown loci of a MESFET, PHEMT and Power PHEMT. It is based on the study of the correlation between breakdown loci and device output characteristics. This study aims at performing a technology choice for amplifier design operating in non linear conditions with operating level close to the maximum operating conditions ...
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean‐Luc Muraro   +4 more
openaire   +1 more source