Results 101 to 110 of about 3,802 (219)

Codesign of ${K}$ a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier

IEEE Access, 2019
In this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm-pHEMT technology.
Lin Yang, Lin-An Yang, Taotao Rong, Yang Li, Zhi Jin, Yue Hao   +5 more
doaj   +1 more source

Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model [PDF]

, 2002
A general-purpose, technology-independent behavioral model is adopted for the intermodulation performance prediction of PHEMT devices. The model can be easily identified since its nonlinear functions are directly related to conventional DC and small ...
Argento, D., Costantini, A., Favre, G., Filicori, F., Paganelli, R.P., Pagani, M., Santarelli, A., Traverso, P.A., Vannini, G.   +8 more
core   +1 more source

An Ultra-Wideband Digitally Programmable Power Amplifier with Efficiency Enhancement for Cellular and Emerging Wireless Communication Standards [PDF]

, 2016
The design and measurements of a fabricated novel digitally programmable wideband power amplifier (PA) are presented. The PA is made suitable for use in all communication standards, including GSM, 3G, LTE and Femto-cells, offering a bandwidth of several ...
Albasha, Lutfi, Ben Smida, Souheil, Clifton, Chris, Jingu, Yoshikatsu, Kohama, Kazumasa, Lawrenson, Alan, Morris, Kevin, Motoyama, Hideshi   +7 more
core   +3 more sources

Temperature dependence of PHEMT noise parameters

, 1996
To compute and optimize the temperature performance of low noise amplifiers requires not only the temperature coefficients of all the small signal equivalent circuit parameters at the operating bias, but also the temperature dependence of the noise parameters.
Boudiaf, Ali, Scavennec, Andre
openaire   +2 more sources

A 10-20 GHz 6-Bit High-Accuracy Digital Step Attenuator with Low Insertion Loss in 0.15 µm GaAs p-HEMT Technology. [PDF]

Micromachines (Basel), 2023
He D, Yu Z, Chen J, Du K, Zhu Z, Cheng P, Tan C.   +6 more
europepmc   +1 more source

Thermo-mechanical analysis of GaAs devices under temperature-humidity-bias testing

, 2015
International audienceAccelerated life tests on microelectronic devices are needed to estimate their degradation under severe environment. THB (Temperature Humidity Bias) [1] at 85°C and 85%RH (relative humidity) is commonly used for reliability studies.
Adokanou, Kokou, Bonnet, Barbara, Courtade, Frédéric, Inal, Karim, Montmitonnet, Pierre   +4 more
core   +3 more sources

Design of an X-band high efficiency continuous-mode power amplifier

Dianzi Jishu Yingyong
To improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process ...
Liu Hanxiao, Yu Zhongjun, Fan Jingxin, Zhang Desheng   +3 more
doaj   +1 more source

Modelování nelineárních prvků vysokofrekvenčních obvodů neuronovými sítěmi [PDF]

, 2012
Katedra ...
Pospíšil, Ladislav
core  

Novel Approach to Design Ultra Wideband Microwave Amplifiers: Normalized Gain Function Method [PDF]

, 2013
In this work, we propose a novel approach called as “Normalized Gain Function (NGF) method” to design low/medium power single stage ultra wide band microwave amplifiers based on linear S parameters of the active device.
Kopru, R., Kuntman, H., Yarman, B. S.
core   +1 more source

Enhancing the Accuracy of Microwave Element Models by Artificial Neural Networks [PDF]

, 2004
In the recent PSpice programs, five types of the GaAs FET model have been implemented. However, some of them are too sophisticated and therefore very difficult to measure and identify afterwards, especially the realistic model of Parker and Skellern.
Dobes, J., Pospisil, L.
core   +1 more source