Results 101 to 110 of about 2,882 (217)
Optimization of HBT/pHEMT integration technology
, 2010 The InGaP Heterojunction Bipolor Transistors (HBTs) become known as the dominant technology in handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of enhance/depletion ...
Tu, Min-Chang
core
A ku-band phemt mmic high power amplifier design [PDF]
, 2014 Cataloged from PDF version of article.Includes bibliographical references leaves 65-67.Power amplifiers are regarded as the one of the most important part of the radar and communication systems.
Değirmenci, Ahmet
core
Temperature dependence of PHEMT noise parameters
, 1996 To compute and optimize the temperature performance of low noise amplifiers requires not only the temperature coefficients of all the small signal equivalent circuit parameters at the operating bias, but also the temperature dependence of the noise parameters.
Boudiaf, Ali, Scavennec, Andre
openaire +2 more sources
Novel drain-less multi-gate pHEMT for electrostatic discharge (ESD) protection in GaAs technology
, 2013 Electrostatic discharge (ESD) protection structures in GaAs HEMT technology are commonly constructed using either stacked Schottky diode or Single-Gate clamp.
Qiang Cui +3 more
core +1 more source
A 10-20 GHz 6-Bit High-Accuracy Digital Step Attenuator with Low Insertion Loss in 0.15 µm GaAs p-HEMT Technology. [PDF]
Micromachines (Basel), 2023 He D +6 more
europepmc +1 more source
PHEMT transistor models for accurate CAD of MMIC amplifiers [PDF]
, 2002 Selected models of PHEMT transistors are presented for the popular Philips DO2AH process. The models are based on a set of measurements of transistor parameters and have been verified against measurements of fabricated MMIC amplifiers.
Nosal, Z.
core
Ultra-broadband nonlinear PHEMT modelling using TOPAS/sup TM/
, 2002 This paper presents the use of a nonlinear TOPAS/sup TM/ model to describe the behaviour of an AlGaAs/InGaAs/GaAs PHEMT device. The extracted model features excellent agreement at DC and for small-signal excitation up to 120 GHz. The model is implemented
Elgaid, K. +9 more
core +1 more source
A Static Model of Optically Controlled PHEMT in PSPICE
, 2002 【中文摘要】 提出光敏赝配倒置HEMT的静态模型 .该模型是一个四端口的器件 ,其中P端口用来处理输入光信号 ,运用此模型能够模拟不同光功率及光波长下输入光对器件输出电流的影响 .通过PSPICE对光敏PHEMT的DC特性进行数值模拟 ,得到的数值结果与Marso等人的实验数据符合的较好 . 【英文摘要】 We presented a static model of converted optically controlled PHEMT.
陈朝, 傅任武, 肖雪芳
core
Mezcladores simplemente balanceados usando un dispositivo E-PHEMT sin polarización [PDF]
, 2003 Two zero-bias single-device singly-balanced mixers, using an Enhancement Mode Pseodomorphic HEMT (E-PHEMT), are proposed in this paper. The first mixer takes advantage of the time-varying output conductance of the device, when excited at gate with a
Gómez Fernández, María del Carmen +3 more
core
A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT. [PDF]
Micromachines (Basel), 2023 Li J +5 more
europepmc +1 more source