Results 101 to 110 of about 2,069 (221)
Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMPT and PHEMT Structures
, 1995 Symmetric delta-doped InGaP and AlGaAs PHEMT structures have been grown by organometallic vapor phase epitaxy with properties that approach those of MBE grown AlGaAs structures.
Monahan, T. +9 more
core +1 more source
, 2013 [[abstract]]A high-efficiency and high output power K-band frequency doubler using InGaAs PHEMT power device is developed, which features high fundamental frequency rejection, high efficiency, good conversion gain over wide bandwidth, and high output ...
Wen-Ren Lee,Shih-Fong Chao;Zuo-Min Tsai,Pin-Cheng Huang;Chun-Hsien Lien;Jeng-Han Tsai;Huei Wang +1 more
core
MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料
, 2000 用MBE方法制备的PHEMT微结构材料，其2DEG浓度随材料结构的不同在2.0-4.0×10~(12)cm~(-2)之间，室温霍耳迁移率在5000-6500cm~2·V~(-1)·s~(-1)之间。制备的PHEMT器件，栅长为0.7μm的器件的直流特性：I_(dss)～280mA/mm,I_(max)～520-580mA/mm,g_m～320-400mS/mm,BV_(DS)>15V(I_(DS)=1mA/mm),BV_(GS)>10V,微波特性：P_0～600-900mW/mm,G～6-10dB,η_(
曹昕 +6 more
core
A Novel Electrostatic Discharge (ESD) Protection Circuit in D-Mode pHEMT Technology
, 2012 Electrostatic discharge (ESD) protection structures in the D-Mode GaAs HEMT technology are commonly constructed using either stacked Schottky diode or Single-Gate clamp.
Bin Hou +9 more
core +1 more source
Electrical Analysis and Measurement of Ⅲ-ⅤCompound pHEMT
, 2014 Ⅲ-Ⅴ族化合物半導體材料所製成之元件，具有高載子遷移率(mobility)、工作頻率高、射頻損耗低、高線性度、低雜訊等優勢，使得Ⅲ-Ⅴ族化合物半導體元件成為現今射頻通訊應用之關鍵部份。pHEMT為假晶高電子遷移率電晶體之簡稱。它具有體積小、臨界電壓低、功率消耗低、製程要求較單純等特色，因此成為重要之射頻主動元件。 本研究使用TCAD模擬軟體進行元件模擬，以研究pHEMT元件直流特性與材料結構之關係。本研究所模擬之蕭基層/通道層/緩衝層材料結構有三種，其分別為AlGaAs/GaAs/GaAs、AlGaAs/
韓季霖, Han, Chi-Lin
core
A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside
IEEE Journal of the Electron Devices Society, 2013 This paper presents the results of electrical performance studies of the newly developed GaAs pHEMT transistors with Al-based metallization of the ohmic and barrier contacts, and fully copper metallization of interconnects, air bridges, and backside. The
Evgeny V. Erofeev +5 more
doaj +1 more source
A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications [PDF]
, 1999 A high efficiency 2.4-V operation dual delta doped AlGaAs/ InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for personal communications has been developed.
Lee, Di-Houng +3 more
core +1 more source
A 10-20 GHz 6-Bit High-Accuracy Digital Step Attenuator with Low Insertion Loss in 0.15 µm GaAs p-HEMT Technology. [PDF]
Micromachines (Basel), 2023 He D +6 more
europepmc +1 more source
Temperature dependence of PHEMT noise parameters
, 1996 To compute and optimize the temperature performance of low noise amplifiers requires not only the temperature coefficients of all the small signal equivalent circuit parameters at the operating bias, but also the temperature dependence of the noise parameters.
Boudiaf, Ali, Scavennec, Andre
openaire +2 more sources
, 2015 Device Considerations and Characterisations of Double-Channel GaAs pHEMT Schottky Diodes for Limiter ...
Mohammad A. Alim +9 more
core +1 more source