Results 81 to 90 of about 2,069 (221)
Thermal Characteristic Investigation for a Multichip Module Based on APDL
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2024, Issue 1, 2024.Aiming at the failure problems of integrated circuit (IC) caused by higher package density, thinner package, and more heat sources, taking a multichip module (MCM) for receiver front end as an example, the 3‐D model is established based on ANSYS Parametric Design Language (APDL).
Qian Lin +4 more
wiley +1 more source
UWB-MMIC Matrix Distributed Low Noise Amplifier
Proceedings, 2020 In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S21, low reverse gain S12, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is
Moustapha El Bakkali +4 more
doaj +1 more source
Active and Passive Electronic Components, 2016 A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz.
Y. Shang +9 more
doaj +1 more source
Miniature Multi-Band Absorptive Bandstop Filter Designs Using Bridged-T Coils
IEEE Access, 2018 In this paper, miniature absorptive bandstop filters (ABSFs) with one to three stopbands are demonstrated. First, the proposed single-band ABSF is realized by the introduction of one lossy resonator to a conventional stub bandstop filter, while the ...
En-Wei Chang, Yo-Shen Lin
doaj +1 more source
Prediction of harmonic tuning performance in pHEMTs [PDF]
The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005., 2005 This paper focuses on the characterization and optimization of microwave power transistors using a commercial on-wafer harmonic load pull system. Specific attention is paid to the output tuning of the second harmonic impedance presented to the device.
R.K. Varanasi +3 more
openaire +1 more source
Small signal modelling of novel InGaAs/InAlAs/InP pHEMT for high frequency applications
, 2017 HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the ...
Ahmad, N. +8 more
core +1 more source
The MMIC design of GaAs bi-phase voltage variable attenuator
Dianzi Jishu Yingyong, 2019 A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented.
Yuan Yifei, Zhang Bo
doaj +1 more source
, 2005 在新型的共振隧穿二极管(RTD)器件与PHEMT器件单片集成材料结构上,研究和分析了分立器件的制作工艺,给出了分立器件的制作工艺参数.利用上述工艺成功制作了RTD和PHEMT器件,并在室温下分别测试了RTD器件和PHEMT器件的电学特性.测试表明:在室温下,RTD器件的峰电流密度与谷电流密度之比提高到1.78;PHEMT器件的最大跨导约为120mS/mm,在Vgs＝0.5V时的饱和电流约为270mA/mm ...
刘忠立 +5 more
core
, 2018 Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased
Д.Ю. Протасов +5 more
core +1 more source
High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication
Journal of Electronic Science and TechnologyIn the era of rapidly expanding wireless technologies, the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers (LNAs). A two-stage LNA based on the GaAs/InGaAs pseudomorphic
Omar S. Abdulwahid +4 more
doaj +1 more source