Results 81 to 90 of about 2,882 (217)
Enhancement-/depletion-PHEMT device and manufacturing method thereof [PDF]
, 2012 The present invention relates, in general, to enhancement/ depletion Pseudomorphic High Electron Mobility Transistors (PHEMTs) and, in particular, to an enhancement/depletion PHEMT device and a method for manufacturing enhancement/depletion PHEMT ...
Alessandro Chini, Claudio Lanzieri
core
Direct observation of Gain compression mechanisms in PHEMT by RF Gate and Drain Currents [PDF]
, 2002 Average rf gate and drain currents can be used to determine gain compression mechanisms for PHEMTs with different pinch-off voltages. Knee voltage, pinch-off voltage, breakdown voltage and Imax clip output I-V waveform of a PHEMT and cause gain ...
Huang, G. W. +3 more
core +1 more source
High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication
Journal of Electronic Science and TechnologyIn the era of rapidly expanding wireless technologies, the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers (LNAs). A two-stage LNA based on the GaAs/InGaAs pseudomorphic
Omar S. Abdulwahid +4 more
doaj +1 more source
PHEMT transistor models for accurate CAD of MMIC amplifier
Journal of Telecommunications and Information Technology, 2002 Accurate modeling of microwave monolithic integrated circuits (MMICs) is very desirable for the reason of high fabrication costs of GaAs circuits. Designers are trying to achieve the ``first trial success`` to lower costs and accelerate the introduction
Zbigniew Nosal
doaj +1 more source
Thermal Memory Effects on the Linearity of a GaAs PHEMT
, 2004 This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation.
Accillaro, C. +8 more
openaire +3 more sources
Epitaxial technology for the monolithic integration of HBT and PHEMT
, 2010 本研究以有機金屬化學沉積法(Metal Organic Chemical Vapor Disposition, MOCVD )成長雙載子、場效電晶體單石積體結構(BiFET)。我們所使用的BiFET結構，其下層為AlGaAs PHEMT結構，而上層為InGaP HBT結構，其中HBT的次集極層也同時用作PHEMT結構的接觸層。我們在次集極層下成長一層heavily n-doped InGaP，作為etching-stop layer，用以控制gate recess的深度位置 ...
曾敏男, Tseng, Min-Nan
core
Distributed GaAs-PHEMT 0.2um preamplifier for 20 Gbit/s photoreceivers. [PDF]
, 1996 A 20 Gb/s photoreceiver module has been realized with a transimpedance of 63 dBOhm. The bandwidth is 16 GHz, and the average equivalent input noise is 13 pA/(Hz)1/2 up to 14 GHz. This photoreceiver is realized by cascading three distributed preamplifiers
Joly, C. +4 more
core +1 more source
IEEE AccessThis paper presents an inductorless design methodology for compact single-pole double-throw (SPDT) switches in Sub-6 GHz applications. To achieve compactness and meet key performance metrics below 5.0 GHz, the methodology focuses on optimizing the trade ...
Jaehyun Kwon +3 more
doaj +1 more source
A 24 GHz up-converter mixer design with balun circuit
Dianzi Jishu Yingyong, 2018 Based on the structure of Gilbert，a 24 GHz up-conversion mixer was designed with three-piece balun circuit on-chip. Using the gm/I method to coordinate the transistor size to obtain better conversion gain, isolation degree and circuit dissipation power ...
Zhou Zhengxuan +3 more
doaj +1 more source
Electrical Analysis and Measurement of Ⅲ-ⅤCompound pHEMT
, 2014 Ⅲ-Ⅴ族化合物半導體材料所製成之元件，具有高載子遷移率(mobility)、工作頻率高、射頻損耗低、高線性度、低雜訊等優勢，使得Ⅲ-Ⅴ族化合物半導體元件成為現今射頻通訊應用之關鍵部份。pHEMT為假晶高電子遷移率電晶體之簡稱。它具有體積小、臨界電壓低、功率消耗低、製程要求較單純等特色，因此成為重要之射頻主動元件。 本研究使用TCAD模擬軟體進行元件模擬，以研究pHEMT元件直流特性與材料結構之關係。本研究所模擬之蕭基層/通道層/緩衝層材料結構有三種，其分別為AlGaAs/GaAs/GaAs、AlGaAs/
韓季霖, Han, Chi-Lin
core