Results 81 to 90 of about 3,802 (219)
Analysis and Design of a 2-40.5 GHz Low Noise Amplifier With Multiple Bandwidth Expansion Techniques
IEEE Access, 2023 This paper analyzes the main factors limiting the bandwidth expansion of low-noise amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz.
Jiaxuan Li +6 more
doaj +1 more source
A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers
Electronics Letters, Volume 60, Issue 6, March 2024.This letter describes an ultra‐broadband amplifier package operating from DC to 113 GHz, boasting a 12.5 dB average gain. It employs InGaAs amplifier IC in metamorphic high‐electron‐mobility‐transistor technology, mounted on an aluminum submount for low thermal resistance, with 1 mm connectors for ease of use.
Luca Valenziano +6 more
wiley +1 more source
Hotspot Estimation for Antenna-Less Backscatter Communication Using Excited Impedance Analysis [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper proposes a novel method for determining the optimal mounting position of nonlinear components for antenna-less backscatter communication using ground (GND) plane patterns on printed circuit boards (PCB).
Junwoo Cha +2 more
doaj +1 more source
Thermal Characteristic Investigation for a Multichip Module Based on APDL
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2024, Issue 1, 2024.Aiming at the failure problems of integrated circuit (IC) caused by higher package density, thinner package, and more heat sources, taking a multichip module (MCM) for receiver front end as an example, the 3‐D model is established based on ANSYS Parametric Design Language (APDL).
Qian Lin +4 more
wiley +1 more source
Miniature Multi-Band Absorptive Bandstop Filter Designs Using Bridged-T Coils
IEEE Access, 2018 In this paper, miniature absorptive bandstop filters (ABSFs) with one to three stopbands are demonstrated. First, the proposed single-band ABSF is realized by the introduction of one lossy resonator to a conventional stub bandstop filter, while the ...
En-Wei Chang, Yo-Shen Lin
doaj +1 more source
Effect of impact ionization in scaled pHEMTs [PDF]
, 2000 The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions.
Asenov, A. +3 more
core
Upgrade of the Cold Electronics of the ATLAS HEC Calorimeter for sLHC [PDF]
, 2009 The signal amplification and summation electronics of the ATLAS Hadronic End-cap Calorimeter (HEC) is operated at the circumference of the HEC calorimeters inside the cryostats in liquid argon.
Dannheim, D +7 more
core +1 more source
Active and Passive Electronic Components, 2016 A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz.
Y. Shang +9 more
doaj +1 more source
UWB-MMIC Matrix Distributed Low Noise Amplifier
Proceedings, 2020 In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S21, low reverse gain S12, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is
Moustapha El Bakkali +4 more
doaj +1 more source
Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs [PDF]
, 1996 The authors report how the performance of 0.12 μm GaAs pHEMTs is improved by controlling both the gate recess width, using selective dry etching, and the gate position in the source drain gap, using electron beam lithography.
Asenov, A. +6 more
core +1 more source