Results 71 to 80 of about 2,882 (217)
Thermal Characteristic Investigation for a Multichip Module Based on APDL
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2024, Issue 1, 2024.Aiming at the failure problems of integrated circuit (IC) caused by higher package density, thinner package, and more heat sources, taking a multichip module (MCM) for receiver front end as an example, the 3‐D model is established based on ANSYS Parametric Design Language (APDL).
Qian Lin +4 more
wiley +1 more source
Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications
, 2016 Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications is substantial to the future transistors that will operate in high speed and low noise conditions. The novel pHEMT is constructed by sandwiching two different materials together
Ahmad, N. +17 more
core +1 more source
Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers [PDF]
, 2000 An integrated enhancement/depletion mode InGaP/AlGaAs power PHEMT process is demonstrated for various single- and dual-supply high efficiency power amplifiers. This technology utilizes excellent etch selectivity and surface charge screening properties of
Tkachenko, Y. +3 more
core +1 more source
Stabilisation of multi‐loop amplifiers using circuit‐based two‐port models stability analysis
IET Circuits, Devices and Systems, 2021 This article applies a systematic approach based on the normalized determinant function (NDF) theory to analyse stability in multi‐loop circuits and to design the required stabilization network.
Abbas Pasdar, Masoud Meghdadi, Ali Medi
doaj +1 more source
Prediction of harmonic tuning performance in pHEMTs [PDF]
The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005., 2005 This paper focuses on the characterization and optimization of microwave power transistors using a commercial on-wafer harmonic load pull system. Specific attention is paid to the output tuning of the second harmonic impedance presented to the device.
R.K. Varanasi +3 more
openaire +1 more source
Design and Realisation of a pHEMT Diode MMIC Power Limiter using 3D GaAs Multilayer CPW Technology
, 2015 Design and Realisation of a pHEMT Diode MMIC Power Limiter using 3D GaAs Multilayer CPW ...
Mohammad A. Alim +11 more
core +1 more source
Brazilian Journal of Radiation Sciences, 2015 Apresenta-se neste trabalho um módulo NIM (Nuclear Instrumentation Module) de alta velocidade para detecção de radiações, gama e múons, como parte de um sistema para monitoramento de radiação natural e de origem extraterrestre.
Bárbara Konrad, Everton Lüdke
doaj +1 more source
Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation
IEEE Journal of the Electron Devices Society, 2020 With the development of microelectronic technology, the reliability of devices in a complex electromagnetic environment has become one of the greatest challenges in the semiconductor industry.
Yu-Qian Liu +5 more
doaj +1 more source
, 2005 在新型的共振隧穿二极管(RTD)器件与PHEMT器件单片集成材料结构上,研究和分析了分立器件的制作工艺,给出了分立器件的制作工艺参数.利用上述工艺成功制作了RTD和PHEMT器件,并在室温下分别测试了RTD器件和PHEMT器件的电学特性.测试表明:在室温下,RTD器件的峰电流密度与谷电流密度之比提高到1.78;PHEMT器件的最大跨导约为120mS/mm,在Vgs＝0.5V时的饱和电流约为270mA/mm ...
刘忠立 +5 more
core
Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
AIP Advances, 2018 Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs ...
Chia-Chu Cheng +4 more
doaj +1 more source