Results 71 to 80 of about 2,069 (221)

Effect of impact ionization in scaled pHEMTs [PDF]

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534), 2002
The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions. The scaling of devices with gate lengths of 120, 90, 70, 50 and 30 nm has been performed in both lateral and vertical directions. The impact ionization is treated as an
Kalna, K., Asenov, A., Elgaid, K., Thayne, I.   +3 more
openaire   +1 more source

Active quasi circulator: Comprehensive review and performance comparison

Engineering Reports, Volume 6, Issue 6, June 2024.
To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan, Sujan Chowdhury, Hasan U. Zaman   +2 more
wiley   +1 more source

Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers [PDF]

Radioengineering, 2015
Although practically all function blocks of the satellite navigation receivers are realized using the CMOS digital integrated circuits, it is appropriate to create a separate low noise antenna preamplifier based on a low noise pHEMT. Such an RF front end
J. Dobes, J. Michal, J. Popp, D. Cerny, M. Grabner, F. Vejrazka, J. Kakona, S. Matejka   +7 more
doaj  

A 24 GHz up-converter mixer design with balun circuit

Dianzi Jishu Yingyong, 2018
Based on the structure of Gilbert，a 24 GHz up-conversion mixer was designed with three-piece balun circuit on-chip. Using the gm/I method to coordinate the transistor size to obtain better conversion gain, isolation degree and circuit dissipation power ...
Zhou Zhengxuan, Li Gang, Lin Jiafu, Zhang Guohao   +3 more
doaj   +1 more source

Analysis and Design of a 2-40.5 GHz Low Noise Amplifier With Multiple Bandwidth Expansion Techniques

IEEE Access, 2023
This paper analyzes the main factors limiting the bandwidth expansion of low-noise amplifiers (LNA) and designs a broadband LNA with a bandwidth of 2-40.5 GHz.
Jiaxuan Li, Jialong Zeng, Yang Yuan, Ding He, Jingxin Fan, Cheng Tan, Zhongjun Yu   +6 more
doaj   +1 more source

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

Electronics Letters, Volume 60, Issue 7, April 2024.
A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm. Abstract A compact 60‐GHz
Kai‐Da Xu, Shangjing Xi, Hairui Liu, Shichang Chen   +3 more
wiley   +1 more source

E-pHEMT complements HBT - may challenge below 3 V

, 2001
A topic of much debate in gallium arsenide IC manufacturing currently is the challenge to HBTs from new Enhancement-mode pHEMT transistors for power amplifiers in low-volt-age, portable wireless handsets.
Mark Telford, Telford, Mark
core   +1 more source

Hotspot Estimation for Antenna-Less Backscatter Communication Using Excited Impedance Analysis [PDF]

Journal of Electromagnetic Engineering and Science
This paper proposes a novel method for determining the optimal mounting position of nonlinear components for antenna-less backscatter communication using ground (GND) plane patterns on printed circuit boards (PCB).
Junwoo Cha, Choyoun Park, Youngcheol Park   +2 more
doaj   +1 more source

A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers

Electronics Letters, Volume 60, Issue 6, March 2024.
This letter describes an ultra‐broadband amplifier package operating from DC to 113 GHz, boasting a 12.5 dB average gain. It employs InGaAs amplifier IC in metamorphic high‐electron‐mobility‐transistor technology, mounted on an aluminum submount for low thermal resistance, with 1 mm connectors for ease of use.
Luca Valenziano, Joachim Hebeler, Alban Sherifaj, Fabian Thome, Christian Koos, Thomas Zwick, Akanksha Bhutani   +6 more
wiley   +1 more source

Enhancement-/depletion-PHEMT device and manufacturing method thereof [PDF]

, 2012
The present invention relates, in general, to enhancement/ depletion Pseudomorphic High Electron Mobility Transistors (PHEMTs) and, in particular, to an enhancement/depletion PHEMT device and a method for manufacturing enhancement/depletion PHEMT ...
Alessandro Chini, Claudio Lanzieri
core