Results 71 to 80 of about 269 (178)

Codesign of ${K}$ a-Band Integrated GaAs PIN Diodes Limiter and Low Noise Amplifier

IEEE Access, 2019
In this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm-pHEMT technology.
Lin Yang, Lin-An Yang, Taotao Rong, Yang Li, Zhi Jin, Yue Hao   +5 more
doaj   +1 more source

TaN/NiGe/Au DIODES FOR PROTECTING MICROWAVE RECEIVER FRONT ENDS AGAINST INTENTIONAL DESTRUCTIVE ELECTROMAGNETIC EFFECTS

Безопасность информационных технологий
This work is focused on the development and investigation of a planar diode element based on a thin tantalum nitride film and Ni/Ge/Au contact metallization for use in microwave monolithic integrated circuits (MMICs).
Konstantin S. Alekseev, Leonid Alekseevich Badigin, Ivan S. Vasil’evskii, Lev I. Litovskii, Natalia V. Siglovaya, Dmitrii N. Iakovishin   +5 more
doaj   +1 more source

A 10-20 GHz 6-Bit High-Accuracy Digital Step Attenuator with Low Insertion Loss in 0.15 µm GaAs p-HEMT Technology. [PDF]

Micromachines (Basel), 2023
He D, Yu Z, Chen J, Du K, Zhu Z, Cheng P, Tan C.   +6 more
europepmc   +1 more source

Design of an X-band high efficiency continuous-mode power amplifier

Dianzi Jishu Yingyong
To improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process ...
Liu Hanxiao, Yu Zhongjun, Fan Jingxin, Zhang Desheng   +3 more
doaj   +1 more source

Compact Bandwidth-Enhanced 180-Degree Phase Shifter Using Edge-Coupled Multi-Microstrip and Artificial Transmission Line. [PDF]

Micromachines (Basel), 2023
He D, Fan J, Zhu Z, Yuan Y, Yu Z.
europepmc   +1 more source

Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses. [PDF]

Sci Rep, 2022
Zhao J, Chen Q, Chen C, Chen Z, Liu Z, Zhao G.   +5 more
europepmc   +1 more source

Coupling Effects Analysis and Suppression in a Highly Integrated Ka-Band Receiver Front-End MMIC for a Passive Millimeter-Wave Imager System. [PDF]

Sensors (Basel), 2022
Chen X, Hu A, Gong J, Altaf A, Miao J.
europepmc   +1 more source

The Design of a 1-6 GHz Broadband Double-Balanced Mixer. [PDF]

Micromachines (Basel), 2023
Wang Y, Tian J, Wang B, Wan L, Jin Z.
europepmc   +1 more source

A 20–40 GHz Harmonic Rejection Enhanced Frequency Doubler in 150 nm GaAs p-HEMT

IEEE Access
This paper presents a broadband monolithic microwave integrated circuit (MMIC) frequency doubler within a 20-40GHz frequency operation range in a $0.15\mu $ m GaAs p-HEMT process.
Fengyun Chen, Li Gao, Xiu Yin Zhang, Yanjie Wang   +3 more
doaj   +1 more source

A 66-76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application. [PDF]

Micromachines (Basel), 2022
Zhou P, Wang C, Sun J, Chen Z, Chen J, Hong W.   +5 more
europepmc   +1 more source