PHEMT transistor models for accurate CAD of MMIC amplifier
Journal of Telecommunications and Information Technology, 2002 Accurate modeling of microwave monolithic integrated circuits (MMICs) is very desirable for the reason of high fabrication costs of GaAs circuits. Designers are trying to achieve the ``first trial success`` to lower costs and accelerate the introduction
Zbigniew Nosal
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Stabilisation of multi‐loop amplifiers using circuit‐based two‐port models stability analysis
IET Circuits, Devices and Systems, 2021 This article applies a systematic approach based on the normalized determinant function (NDF) theory to analyse stability in multi‐loop circuits and to design the required stabilization network.
Abbas Pasdar, Masoud Meghdadi, Ali Medi
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Imaging Capability of PHEMT, GaN/AlGaN and Si Micro Hall Probes for Scanning Hall Probe Microscopy between 25°C-125°C [PDF]
, 2008 R. Akram, M.
Oral, Ahmet
core
Effects of deep levels on transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor [PDF]
, 2014 The effects of deep levels on the transconductance dispersion in an AlGaAs/InGaAs pseudomorphic high electron mobility transistor was interpreted using capacitance deep level transient spectroscopy (DLTS).
Choi, Kyoung Jin, Lee, JL, Yoo, HM
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Design and Simulation of a Wideband 3‐Bit Phase Shifter for 4.5–5.5 GHz Applications
IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.In this article, a phase shifter circuit designed for next‐generation communication systems was presented. Operating at 4.5–5.5 GHz, the circuit in question is a 3‐bit all‐pass LC lattice, which was initially analyzed using MATLAB. Following this analysis, the circuit was set up and simulated in advanced design system (ADS) using numerical values ...
Sena Taş +2 more
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Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation
IEEE Journal of the Electron Devices Society, 2020 With the development of microelectronic technology, the reliability of devices in a complex electromagnetic environment has become one of the greatest challenges in the semiconductor industry.
Yu-Qian Liu +5 more
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Design of cryogenic 700 MHz HEMT amplifier [PDF]
, 2004 We present a way to design a high-frequency low-temperature pHEMT-based balanced amplifier. The design is based on measured cryogenic S-parameters combined with a small-signal noise model.
Hakonen, Pertti J., Roschier, Leif
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Electronics Letters, Volume 61, Issue 1, January/December 2025.The design and experimental validation of an ultra‐wideband 256‐element active phased array operating across the 3–15 GHz frequency range is proposed in this letter. These findings highlight the potential of the array for multifunctional sensor applications on resource‐constrained platforms such as spaceborne and airborne systems, with stringent size ...
Daqun Yu +3 more
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An approach to harmonic load- and source-pull measurements for high-efficiency PA design [PDF]
, 2004 High-efficiency power-amplifier design requires numerous efforts to investigate both input and output harmonic terminations effects. A simplified theoretical approach to clarify the relevance of such terminations is presented here, and design criteria to
Colantonio, P. +3 more
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A K‐Band 4‐Channel Hybrid‐Packaged Phased‐Array Receiver With 1.6‐dB NF and 60‐dB Transmit Rejection
Electronics Letters, Volume 61, Issue 1, January/December 2025.The design utilizes WLCSP technology to integrate four GaAs LNAs and a 4‐channel CMOS beamformer into a single package for K/Ka‐band SATCOM. The GaAs IC features a 2‐stage self‐biased LNA and a 5th‐order band‐stop filter, achieving a low cascaded NF and high TX rejection.
Bai Song, Yong Fan
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