Results 61 to 70 of about 2,882 (217)
A 76–81 GHz GaAs pHEMT Transceiver Front‐End MMIC for FMCW Radar System
Electronics Letters, Volume 61, Issue 1, January/December 2025.A 76–81 GHz transceiver front‐end monolithic microwave integrated circuit for W‐band frequency modulated continuous wave radar front‐end miniaturization is fabricated via 0.1 µm GaAs pHEMT technology, integrating mixer, directional coupler, filter and other modules.
Chunyu Pu, Xiaofeng Yang
wiley +1 more source
, 2018 Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased
Д.Ю. Протасов +5 more
core +1 more source
Active quasi circulator: Comprehensive review and performance comparison
Engineering Reports, Volume 6, Issue 6, June 2024.To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan +2 more
wiley +1 more source
Novel electrostatic discharge (ESD) protection solution in GaAs pHEMT technology
, 2012 This paper develops an effective electrostatic discharge (ESD) protection solution for GaAs-based integrated circuits based on a novel multi-gate pHEMT.
Juin J. Liou +3 more
core +1 more source
A compact 60‐GHz on‐chip bandpass filter in GaAs technology
Electronics Letters, Volume 60, Issue 7, April 2024.A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm. Abstract A compact 60‐GHz
Kai‐Da Xu +3 more
wiley +1 more source
, 2015 Device Considerations and Characterisations of Double-Channel GaAs pHEMT Schottky Diodes for Limiter ...
Mohammad A. Alim +9 more
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Simulation des comportements DC et RF des transistors Al0.2Ga0.8As PHEMT et TiO2 MOS-HEMT pseudomorphiques [PDF]
, 2017 L'évolution de la nouvelle technologie pour les applications de télécommunications, de radionavigations et radars sont aujourd’hui d’un intérêt stratégique et commercial majeur.
Taibi, Abdennasser, Meziane, Nasraddine
core +1 more source
A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside
IEEE Journal of the Electron Devices Society, 2013 This paper presents the results of electrical performance studies of the newly developed GaAs pHEMT transistors with Al-based metallization of the ohmic and barrier contacts, and fully copper metallization of interconnects, air bridges, and backside. The
Evgeny V. Erofeev +5 more
doaj +1 more source
A 12 GHz low noise amplifier with high-gain
Dianzi Jishu Yingyong, 2022 A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented ...
He Moxu, Hu Junjian, Gao Bo, He Liangjin
doaj +1 more source
A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers
Electronics Letters, Volume 60, Issue 6, March 2024.This letter describes an ultra‐broadband amplifier package operating from DC to 113 GHz, boasting a 12.5 dB average gain. It employs InGaAs amplifier IC in metamorphic high‐electron‐mobility‐transistor technology, mounted on an aluminum submount for low thermal resistance, with 1 mm connectors for ease of use.
Luca Valenziano +6 more
wiley +1 more source