Results 61 to 70 of about 2,069 (221)
XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim +6 more
wiley +1 more source
Enhancement/depletion PHEMT device [PDF]
, 2012 An embodiment of the present invention concerns a layered epitaxial structure for enhancement/ depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/ depletion PHEMT device that finds advantageous ...
Alessandro Chini, Claudio Lanzieri
core
Quantum-well infrared phototransistor with pHEMT structure [PDF]
, 2005 A quantum-well infrared phototransistor with a pseudomorphic high-electron mobility transistor (pHEMT) structure is presented. The proposed phototransistor uses four periods of a GaAs/Al0.3Ga0.7As (50 angstrom/120 angstrom) quantum-well absorption region,
Yang, Jong Ryul +4 more
core +1 more source
Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation
IEEE Journal of the Electron Devices Society, 2020 With the development of microelectronic technology, the reliability of devices in a complex electromagnetic environment has become one of the greatest challenges in the semiconductor industry.
Yu-Qian Liu +5 more
doaj +1 more source
Design and Simulation of a Wideband 3‐Bit Phase Shifter for 4.5–5.5 GHz Applications
IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.In this article, a phase shifter circuit designed for next‐generation communication systems was presented. Operating at 4.5–5.5 GHz, the circuit in question is a 3‐bit all‐pass LC lattice, which was initially analyzed using MATLAB. Following this analysis, the circuit was set up and simulated in advanced design system (ADS) using numerical values ...
Sena Taş +2 more
wiley +1 more source
Electronics Letters, Volume 61, Issue 1, January/December 2025.The design and experimental validation of an ultra‐wideband 256‐element active phased array operating across the 3–15 GHz frequency range is proposed in this letter. These findings highlight the potential of the array for multifunctional sensor applications on resource‐constrained platforms such as spaceborne and airborne systems, with stringent size ...
Daqun Yu +3 more
wiley +1 more source
A K‐Band 4‐Channel Hybrid‐Packaged Phased‐Array Receiver With 1.6‐dB NF and 60‐dB Transmit Rejection
Electronics Letters, Volume 61, Issue 1, January/December 2025.The design utilizes WLCSP technology to integrate four GaAs LNAs and a 4‐channel CMOS beamformer into a single package for K/Ka‐band SATCOM. The GaAs IC features a 2‐stage self‐biased LNA and a 5th‐order band‐stop filter, achieving a low cascaded NF and high TX rejection.
Bai Song, Yong Fan
wiley +1 more source
Gate recess study for high thermal stability pHEMT devices
EPJ Web of Conferences, 2017 Gate formation is a crucial steps, especially in FET fabrication process. At this steps, the characteristics are very much influenced by the processing parameters, particularly in the processing temperature. In this paper, we report the thermal stability
Isa M. Mohamad +7 more
doaj +1 more source
Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications
IEEE Access, 2022 This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In the new radio (NR) of the fifth generation (5G) communication system, the inter-band carrier aggregation technique is commonly ...
Yi-Fan Tsao +3 more
doaj +1 more source
A 76–81 GHz GaAs pHEMT Transceiver Front‐End MMIC for FMCW Radar System
Electronics Letters, Volume 61, Issue 1, January/December 2025.A 76–81 GHz transceiver front‐end monolithic microwave integrated circuit for W‐band frequency modulated continuous wave radar front‐end miniaturization is fabricated via 0.1 µm GaAs pHEMT technology, integrating mixer, directional coupler, filter and other modules.
Chunyu Pu, Xiaofeng Yang
wiley +1 more source