Results 61 to 70 of about 269 (178)
A 24 GHz up-converter mixer design with balun circuit
Dianzi Jishu Yingyong, 2018 Based on the structure of Gilbert，a 24 GHz up-conversion mixer was designed with three-piece balun circuit on-chip. Using the gm/I method to coordinate the transistor size to obtain better conversion gain, isolation degree and circuit dissipation power ...
Zhou Zhengxuan +3 more
doaj +1 more source
Thermal Characteristic Investigation for a Multichip Module Based on APDL
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2024, Issue 1, 2024.Aiming at the failure problems of integrated circuit (IC) caused by higher package density, thinner package, and more heat sources, taking a multichip module (MCM) for receiver front end as an example, the 3‐D model is established based on ANSYS Parametric Design Language (APDL).
Qian Lin +4 more
wiley +1 more source
Miniature Multi-Band Absorptive Bandstop Filter Designs Using Bridged-T Coils
IEEE Access, 2018 In this paper, miniature absorptive bandstop filters (ABSFs) with one to three stopbands are demonstrated. First, the proposed single-band ABSF is realized by the introduction of one lossy resonator to a conventional stub bandstop filter, while the ...
En-Wei Chang, Yo-Shen Lin
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Active and Passive Electronic Components, 2016 A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz.
Y. Shang +9 more
doaj +1 more source
Hotspot Estimation for Antenna-Less Backscatter Communication Using Excited Impedance Analysis [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper proposes a novel method for determining the optimal mounting position of nonlinear components for antenna-less backscatter communication using ground (GND) plane patterns on printed circuit boards (PCB).
Junwoo Cha +2 more
doaj +1 more source
UWB-MMIC Matrix Distributed Low Noise Amplifier
Proceedings, 2020 In this paper, a 3.1–11 GHz ultra-wideband low noise amplifier with low noise figure, high power gain S21, low reverse gain S12, and high linearity using the OMMIC ED02AH process, which employs a 0.18 μm Pseudomorphic High Electron Mobility Transistor is
Moustapha El Bakkali +4 more
doaj +1 more source
The MMIC design of GaAs bi-phase voltage variable attenuator
Dianzi Jishu Yingyong, 2019 A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented.
Yuan Yifei, Zhang Bo
doaj +1 more source
Thermal Memory Effects on the Linearity of a GaAs PHEMT
, 2004 This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation.
Accillaro, C. +8 more
openaire +3 more sources
High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication
Journal of Electronic Science and TechnologyIn the era of rapidly expanding wireless technologies, the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers (LNAs). A two-stage LNA based on the GaAs/InGaAs pseudomorphic
Omar S. Abdulwahid +4 more
doaj +1 more source
Temperature dependence of PHEMT noise parameters
, 1996 To compute and optimize the temperature performance of low noise amplifiers requires not only the temperature coefficients of all the small signal equivalent circuit parameters at the operating bias, but also the temperature dependence of the noise parameters.
Boudiaf, Ali, Scavennec, Andre
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