Results 41 to 50 of about 2,069 (221)
IET Circuits, Devices &Systems, Volume 16, Issue 7, Page 553-568, October 2022., 2022 Abstract This article presents the design and optimisation of a sub‐1 GHz class‐F ultra‐low power (ULP) power amplifier (PA) in 65 nm Complementary Metal Oxide Semiconductor (CMOS) technology. An envelope tracking (ET) supply biasing technique is adopted to improve the efficiency of class‐F PA.
Muhammad Ovais Akhter +2 more
wiley +1 more source
The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
Dianzi Jishu Yingyong, 2018 This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant
Liu Yanpeng, Wei Qidi, Zhang Guohao
doaj +1 more source
EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
Известия высших учебных заведений России: Радиоэлектроника, 2018 The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova +2 more
doaj +1 more source
Development of a New pHEMT-Based Electrostatic Discharge Protection Structure
, 2011 Electrostatic discharge (ESD) protection structures in the GaAs technology are commonly constructed using enhancement-mode single-gate (SG) pseudomorphic high-electron mobility transistor (pHEMT) devices.
Juin J. Liou +7 more
core +2 more sources
High Conversion Gain Self-Oscillating Mixer for 5G mm-wave Applications
ASM Science Journal, 2022 We develop in this paper, a high conversion gain self-oscillating mixer (SOM) for 5G mm-wave applications using commercial 0.15µm GaAs PHEMT from UMS foundry.
Abdelhafid ES-SAQY +6 more
doaj +1 more source
IEEE Access, 2019 An improved technique for the design of an unbalanced analog reflection-type on-chip vector modulator is presented. At microwave frequencies, voltage-controlled high-electron-mobility transistor (HEMT) like pseudomorphic HEMT (pHEMT) is often chosen as ...
Chen Chen +5 more
doaj +1 more source
IEEE Access, 2019 This paper presents a broadband gallium-arsenide pseudomorphic high-electron-mobilitytransistor (GaAs pHEMT) power amplifier integrated circuit (PAIC) based on a dual-frequency selective impedance matching technique for warfare applications.
Hwiseob Lee +5 more
doaj +1 more source
The design and testing issues of radiation tolerant microwave amplifiers implemented in the domestic GaAs pHEMT 0.5 μm process [PDF]
ITM Web of Conferences, 2019 The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work.
Sotskov Denis +4 more
doaj +1 more source
RF analysis of aggressively scaled pHEMTs [PDF]
30th European Solid-State Device Research Conference, 2000 No abstract avaliable.
Kalna, K. +4 more
openaire +1 more source
Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers [PDF]
, 2000 An integrated enhancement/depletion mode InGaP/AlGaAs power PHEMT process is demonstrated for various single- and dual-supply high efficiency power amplifiers. This technology utilizes excellent etch selectivity and surface charge screening properties of
Tkachenko, Y. +3 more
core +1 more source