High Conversion Gain Self-Oscillating Mixer for 5G mm-wave Applications
ASM Science Journal, 2022 We develop in this paper, a high conversion gain self-oscillating mixer (SOM) for 5G mm-wave applications using commercial 0.15µm GaAs PHEMT from UMS foundry.
Abdelhafid ES-SAQY +6 more
doaj +1 more source
On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors [PDF]
, 2009 A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for reconfigurable cellular applications.
Hueting, R.J.E. +4 more
core +3 more sources
IEEE Access, 2019 An improved technique for the design of an unbalanced analog reflection-type on-chip vector modulator is presented. At microwave frequencies, voltage-controlled high-electron-mobility transistor (HEMT) like pseudomorphic HEMT (pHEMT) is often chosen as ...
Chen Chen +5 more
doaj +1 more source
Modeling and performance of a 100-element pHEMT grid amplifier [PDF]
, 1996 A 100-element hybrid grid amplifier has been fabricated, The active devices in the grid are custom-made pseudomorphic high electron mobility transistor (pHEMT) differential-pair chips.
De Lisio, Michael P. +6 more
core +1 more source
IEEE Access, 2019 This paper presents a broadband gallium-arsenide pseudomorphic high-electron-mobilitytransistor (GaAs pHEMT) power amplifier integrated circuit (PAIC) based on a dual-frequency selective impedance matching technique for warfare applications.
Hwiseob Lee +5 more
doaj +1 more source
The design and testing issues of radiation tolerant microwave amplifiers implemented in the domestic GaAs pHEMT 0.5 μm process [PDF]
ITM Web of Conferences, 2019 The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work.
Sotskov Denis +4 more
doaj +1 more source
Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]
, 2001 The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E. +3 more
core +1 more source
Self-aligned 0.12mm T-gate In.53Ga.47As/In.52Al.48As HEMT Technology Utilising a Non Annealed Ohmic Contact Strategy [PDF]
, 2003 An InGaAs/InAlAs based HEMT structure, lattice matched to an InP substrate, is presented in which drive current and transconductance has been optimized through a double-delta doping strategy.
Asenov, A. +8 more
core +1 more source
Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier [PDF]
, 2001 We evaluate an oscillator-amplifier MMIC submitted to high-temperature operating life time tests. To relate adequately these results with individual components’ results, it is important to realise that failure mechanisms in non-linear MMICs are governed ...
Beyer, A. +5 more
core +1 more source
A novel topology for a HEMT negative current mirror [PDF]
, 2000 A new solution for the implementation of a HEMT negative current source is presented. The topology can be also profitably employed as a current mirror and as an active load in high-gain MMICs voltage amplifiers.
Centurelli, F. +4 more
core +1 more source