Results 41 to 50 of about 2,882 (217)

A V-Band Integrated Receiver Front-End Based on 0.15 μm GaAs pHEMT Process for Passive Millimeter-Wave Imaging

IEEE Access, 2022
The design, analysis, implementation and measurement of an integrated V-band receiver front-end based on $0.15~\mu \text{m}$ GaAs pHEMT process are presented in this paper.
Jianhao Gong, Xi Chen, Wangdong He, Amjad Altaf, Anyong Hu, Jungang Miao   +5 more
doaj   +1 more source

Supply Modulation Behavior of a Doherty Power Amplifier

IEEE Journal of Microwaves, 2021
This paper presents a study of supply modulation in a Doherty power amplifier (DPA). To validate a simplified theoretical model, a 3.5 GHz conventional symmetrical DPA using a 6-W packaged GaN pHEMT is designed for supply modulation of the main and/or ...
Dan Fishler, Zoya Popovic, Taylor Barton
doaj   +1 more source

Ka-band GaAs pHEMT Wideband Power Amplifier MMICs

Известия высших учебных заведений России: Радиоэлектроника
Introduction. Ka-band power amplifier MMICs are essential components of many electronic systems. Their application area covers radar, 5G communication, and test equipment.
Alexander S. Efimov, Artem M. Emelianov, Evgeniya A. Krivonogova, Sergey D. Zinkin, Alexander V. Grusha   +4 more
doaj   +1 more source

Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT

, 2013
We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs).
Rodilla, Helena, Grahn, Jan, Nilsson, Per-Åke,, J. Grahn, N. Wadefalk, H. Rodilla, Rodilla, Helena,, J. Schleeh, Grahn, Jan,, Schleeh, Joel, Wadefalk, Niklas, P. A. Nilsson, Schleeh, Joel,, Wadefalk, Niklas,, Nilsson, Per-\uc5ke, Nilsson, Per-Åke   +15 more
core   +1 more source

Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT

Известия высших учебных заведений России: Радиоэлектроника
Introduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov, I. S. Pushnitsa, A. L. Dudin, V. V. Perepelovskiy   +3 more
doaj   +1 more source

Effect of impact ionization in scaled pHEMTs [PDF]

8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534), 2002
The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions. The scaling of devices with gate lengths of 120, 90, 70, 50 and 30 nm has been performed in both lateral and vertical directions. The impact ionization is treated as an
Kalna, K., Asenov, A., Elgaid, K., Thayne, I.   +3 more
openaire   +1 more source

K-Band High-Power Rectification With GaAs E-pHEMT Gated Anode Diodes

IEEE Journal of Microwaves
In this paper, K-band high-power rectification and its efficiency are discussed in theoretical and experimental approaches. A gated anode diodes (GAD) configured with a gallium arsenide (GaAs) enhancement-mode pseudomorphic high-electron-mobility ...
Yuya Hirose, Naoya Kakutani, Fumiya Komatsu, Naoki Sakai, Masaomi Tsuru, Kenji Itoh   +5 more
doaj   +1 more source

An Ultra-Compact On-Chip Reconfigurable Bandpass Filter With Semi-Lumped Topology by Using GaAs pHEMT Technology

IEEE Access, 2020
A semi-lumped reconfigurable on-chip bandpass filter with GaAs pHEMT technology is presented in this paper. Three order tunable bandpass filter is designed with serial lumped capacitors, parallel resonators, and reconfigurable components.
Hao-Ran Zhu, Xin-Yu Ning, Zhi-Xiang Huang, Xian-Liang Wu   +3 more
doaj   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Study of DX centers in AlGaAs/InGaAs/GaAs pHEMT

Известия высших учебных заведений России: Радиоэлектроника
Introduction. A major challenge in AlGaAs-based heterostructure devices is the presence of DX centers in heavily doped n-type layers. These deep donor traps degrade the performance of pseudomorphic high electron mobility transistors (pHEMTs).
A. V. Sapozhnikov, R. S. Kryukov, A. I. Baranov, A. L. Dudin, V. V. Perepelovskiy   +4 more
doaj   +1 more source