Results 31 to 40 of about 269 (178)

Miniaturized Multilayer CPW pHEMT Amplifiers

2008 European Microwave Integrated Circuit Conference, 2008
Compact pHEMT amplifiers, which are composed of newly developed miniaturized multilayer inductors and capacitors, have been designed, fabricated and characterised. Their measured performances are presented and compared with those of amplifiers composed of conventional planar components.
Sun, Q., Vo, V. T., Tan, J., Davies, R, Rezazadeh, A. A.   +4 more
openaire   +2 more sources

High Conversion Gain Self-Oscillating Mixer for 5G mm-wave Applications

ASM Science Journal, 2022
We develop in this paper, a high conversion gain self-oscillating mixer (SOM) for 5G mm-wave applications using commercial 0.15µm GaAs PHEMT from UMS foundry.
Abdelhafid ES-SAQY, maryam abata, mohammed Fattah, said Mazer, Mahmoud Mehdi, Moulhime El Bekkali, Cathrine Algani   +6 more
doaj   +1 more source

Performance Improvement of Microwave Vector Modulator Through Coupler Characteristic Impedance Optimization and Bond-Wire Inductance Utilization

IEEE Access, 2019
An improved technique for the design of an unbalanced analog reflection-type on-chip vector modulator is presented. At microwave frequencies, voltage-controlled high-electron-mobility transistor (HEMT) like pseudomorphic HEMT (pHEMT) is often chosen as ...
Chen Chen, Umar Dilshad, Ghulam Mehdi, Chao Wang, Anyong Hu, Jungang Miao   +5 more
doaj   +1 more source

6–18 GHz GaAs pHEMT Broadband Power Amplifier Based on Dual-Frequency Selective Impedance Matching Technique

IEEE Access, 2019
This paper presents a broadband gallium-arsenide pseudomorphic high-electron-mobilitytransistor (GaAs pHEMT) power amplifier integrated circuit (PAIC) based on a dual-frequency selective impedance matching technique for warfare applications.
Hwiseob Lee, Wooseok Lee, Taewan Kim, Mohamed Helaoui, Fadhel M. Ghannouchi, Youngoo Yang   +5 more
doaj   +1 more source

The design and testing issues of radiation tolerant microwave amplifiers implemented in the domestic GaAs pHEMT 0.5 μm process [PDF]

ITM Web of Conferences, 2019
The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work.
Sotskov Denis, Kuznetsov Alexander, Usachev Nikolay, Elesin Vadim, Selishchev Ilya   +4 more
doaj   +1 more source

A 24 GHz PHEMT-based oscillator

Journal of Telecommunications and Information Technology, 2003
We present a systematic nonlinear procedure for designing microwave oscillators utilising a nonlinear PHEMT model, the negative resistance approach and the describing function concept. The procedure is applied in the design of a 24 GHz oscillator, which
Arkadiusz Lewandowski, Wilfred Mwema, Günter Kompa, Wojciech Wiatr   +3 more
doaj   +1 more source

RF analysis of aggressively scaled pHEMTs [PDF]

30th European Solid-State Device Research Conference, 2000
No abstract avaliable.
Kalna, K., Roy, S., Asenov, A., Elgaid, K., Thayne, I.   +4 more
openaire   +1 more source

Ka-band GaAs pHEMT Wideband Power Amplifier MMICs

Известия высших учебных заведений России: Радиоэлектроника
Introduction. Ka-band power amplifier MMICs are essential components of many electronic systems. Their application area covers radar, 5G communication, and test equipment.
Alexander S. Efimov, Artem M. Emelianov, Evgeniya A. Krivonogova, Sergey D. Zinkin, Alexander V. Grusha   +4 more
doaj   +1 more source

K-Band High-Power Rectification With GaAs E-pHEMT Gated Anode Diodes

IEEE Journal of Microwaves
In this paper, K-band high-power rectification and its efficiency are discussed in theoretical and experimental approaches. A gated anode diodes (GAD) configured with a gallium arsenide (GaAs) enhancement-mode pseudomorphic high-electron-mobility ...
Yuya Hirose, Naoya Kakutani, Fumiya Komatsu, Naoki Sakai, Masaomi Tsuru, Kenji Itoh   +5 more
doaj   +1 more source

Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT

Известия высших учебных заведений России: Радиоэлектроника
Introduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov, I. S. Pushnitsa, A. L. Dudin, V. V. Perepelovskiy   +3 more
doaj   +1 more source