Results 31 to 40 of about 2,069 (221)
Small, Volume 19, Issue 37, September 13, 2023., 2023 This work presents a comprehensive investigation of MXene films operating as microwave resonators under varying humidity. The effect of MXene flake sizes on the resonant performance under varying humidities is experimentally studied. To mitigate the power losses of MXene films upon degradation (e.g., humidity exposure), an active feedback configuration
Omid Niksan +4 more
wiley +1 more source
Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation [PDF]
ITM Web of Conferences, 2019 The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling ...
Gromov Dmitry, Elesin Vadim
doaj +1 more source
Supply Modulation Behavior of a Doherty Power Amplifier
IEEE Journal of Microwaves, 2021 This paper presents a study of supply modulation in a Doherty power amplifier (DPA). To validate a simplified theoretical model, a 3.5 GHz conventional symmetrical DPA using a 6-W packaged GaN pHEMT is designed for supply modulation of the main and/or ...
Dan Fishler, Zoya Popovic, Taylor Barton
doaj +1 more source
On‐chip GaAs‐based dual‐band bandpass filters/isolators (DBPFIs)
Electronics Letters, Volume 59, Issue 10, May 2023., 2023 MMIC co‐designed RF components exhibiting the collocated RF signal processing actions of a dual‐band bandpass filter and an RF isolator (DBPFI) are presented. They are based on in‐parallel cascaded bandpass filters/isolators that operate at two different frequencies and two multi‐resonant cells that are added in the RF input and RF output to increase ...
Andrea Ashley, Dimitra Psychogiou
wiley +1 more source
Electronics Letters, Volume 59, Issue 10, May 2023., 2023 This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow technique. Abstract This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN ...
Yuji Ando +4 more
wiley +1 more source
Electronics Letters, Volume 59, Issue 3, February 2023., 2023 This letter presents a method for implementing a 10–20 GHz low‐noise amplifier with simultaneous noise and input matching performance by using a frequency‐dependent negative feedback network. The analytical equation of the required load is also derived for the first time in order to eliminate the Mille effect caused by the gate‐drain parasitic ...
Ding He +4 more
wiley +1 more source
An X/Ku band phase shifter with filter compensation technology
Electronics Letters, Volume 59, Issue 2, January 2023., 2023 This letter proposes an ultra‐wideband switched T‐type phase shifter, which covers the whole X/Ku band. The proposed switched T‐type phase shifter integrates a switched filter compensation structure, achieving a flat relative phase shift in broadband, which the conventional one cannot acquire.
Jialong Zeng +4 more
wiley +1 more source
Active and Passive Electronic Components, Volume 2023, Issue 1, 2023., 2023 An improved method of extracting small‐signal equivalent circuit model parameters for gallium nitride high electron mobility transistors (GaN HEMTs) is presented. This paper intends to present a method to extract the parasitic inductance and resistance of transistors based on the short‐test structure without the open‐circuit test structure.
Qingyu Yuan +6 more
wiley +1 more source
Design of Terahertz InP pHEMT Using Machine Learning Assisted Global Optimization Techniques [PDF]
, 2022 This paper presents an optimal design of terahertz InP-based pseudomorphic high electron mobility transistors (pHEMT) powered by an artificial intelligence (AI) technique.
Liu, Bo +3 more
core +1 more source
Physical/electromagnetic pHEMT modeling
IEEE Transactions on Microwave Theory and Techniques, 2003 An effective technique, which is based only on geometrical and physical data, is presented for the analysis of high-frequency FETs. The intrinsic part of this electron device is described by a quasi-two-dimensional hydrodynamic transport model, coupled to a numerical electromagnetic field time domain solver in three dimensions that analyzes the passive
CIDRONALI, ALESSANDRO +3 more
openaire +3 more sources