Results 31 to 40 of about 3,802 (219)
Physical/electromagnetic pHEMT modeling
IEEE Transactions on Microwave Theory and Techniques, 2003 An effective technique, which is based only on geometrical and physical data, is presented for the analysis of high-frequency FETs. The intrinsic part of this electron device is described by a quasi-two-dimensional hydrodynamic transport model, coupled to a numerical electromagnetic field time domain solver in three dimensions that analyzes the passive
CIDRONALI, ALESSANDRO +3 more
openaire +3 more sources
Active and Passive Electronic Components, Volume 2023, Issue 1, 2023., 2023 An improved method of extracting small‐signal equivalent circuit model parameters for gallium nitride high electron mobility transistors (GaN HEMTs) is presented. This paper intends to present a method to extract the parasitic inductance and resistance of transistors based on the short‐test structure without the open‐circuit test structure.
Qingyu Yuan +6 more
wiley +1 more source
Tunnelling and impact ionization in scaled double doped PHEMTs [PDF]
, 2002 No abstract ...
Asenov, A., Kalna, K.
core +1 more source
IET Circuits, Devices &Systems, Volume 16, Issue 7, Page 553-568, October 2022., 2022 Abstract This article presents the design and optimisation of a sub‐1 GHz class‐F ultra‐low power (ULP) power amplifier (PA) in 65 nm Complementary Metal Oxide Semiconductor (CMOS) technology. An envelope tracking (ET) supply biasing technique is adopted to improve the efficiency of class‐F PA.
Muhammad Ovais Akhter +2 more
wiley +1 more source
Stability of grid amplifiers [PDF]
, 1998 We present a stability model for quasi-optical grid amplifiers. This model is useful for predicting and suppressing the common-mode oscillations that often occur in amplifier grids. Three stabilization techniques will be discussed.
De Lisio, Michael P. +3 more
core +2 more sources
A 5.5/12.5‐GHz concurrent dual‐band power amplifier MMIC in 0.25 μm GaAs technology
Electronics Letters, Volume 58, Issue 8, Page 303-305, April 2022., 2022 Abstract A concurrent 5.5/12.5‐GHz dual‐band power amplifier (PA) is designed and implemented in a 0.25 μm GaAs pseudomorphic high electron mobility transistor process. The PA is composed of two stages and adopts LC parallel and series networks for dual‐band matching.
Chunshuang Xie +5 more
wiley +1 more source
The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
Dianzi Jishu Yingyong, 2018 This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant
Liu Yanpeng, Wei Qidi, Zhang Guohao
doaj +1 more source
Millimeter-wave FET modeling based on a frequency extrapolation approach [PDF]
, 2000 An empirical distributed model, based on electromagnetic analysis and standard S-parameter measurements up to microwave frequencies, is shown to be capable of accurate small-signal predictions up to the millimeter-wave range.
Cidronali, A. +4 more
core +1 more source
Miniaturized Multilayer CPW pHEMT Amplifiers
2008 European Microwave Integrated Circuit Conference, 2008 Compact pHEMT amplifiers, which are composed of newly developed miniaturized multilayer inductors and capacitors, have been designed, fabricated and characterised. Their measured performances are presented and compared with those of amplifiers composed of conventional planar components.
Sun, Q. +4 more
openaire +2 more sources
EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
Известия высших учебных заведений России: Радиоэлектроника, 2018 The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova +2 more
doaj +1 more source