Results 31 to 40 of about 2,882 (217)
Design of Terahertz InP pHEMT Using Machine Learning Assisted Global Optimization Techniques
, 2022 This paper presents an optimal design of terahertz InP-based pseudomorphic high electron mobility transistors (pHEMT) powered by an artificial intelligence (AI) technique.
Liu, Bo +7 more
core +1 more source
EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
Известия высших учебных заведений России: Радиоэлектроника, 2018 The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova +2 more
doaj +1 more source
Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation [PDF]
ITM Web of Conferences, 2019 The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling ...
Gromov Dmitry, Elesin Vadim
doaj +1 more source
The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
Dianzi Jishu Yingyong, 2018 This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant
Liu Yanpeng, Wei Qidi, Zhang Guohao
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IEEE Access, 2019 This paper presents a broadband gallium-arsenide pseudomorphic high-electron-mobilitytransistor (GaAs pHEMT) power amplifier integrated circuit (PAIC) based on a dual-frequency selective impedance matching technique for warfare applications.
Hwiseob Lee +5 more
doaj +1 more source
Combined Pulse Data Transmission and Indoor Localization Using 60-GHz-UWB MMIC Technology
IEEE Open Journal of Instrumentation and Measurement, 2023 This article presents a pulse radio transmission system operating in the millimeter-wave regime for simultaneous binary information transmission and location in an intrabuilding environment.
Christophe Loyez +3 more
doaj +1 more source
IEEE Access, 2019 An improved technique for the design of an unbalanced analog reflection-type on-chip vector modulator is presented. At microwave frequencies, voltage-controlled high-electron-mobility transistor (HEMT) like pseudomorphic HEMT (pHEMT) is often chosen as ...
Chen Chen +5 more
doaj +1 more source
Конденсированные среды и межфазные границыЦель статьи: Целью настоящей работы является снижение коэффициента шума pHEMT транзистора на подложке GaAs за счет оптимизации толщины барьерного слоя гетероструктуры транзистора и исследование применимости в данных целях методов численного моделирования.
Елена Игоревна Василькова +8 more
doaj +1 more source
A 24 GHz PHEMT-based oscillator
Journal of Telecommunications and Information Technology, 2003 We present a systematic nonlinear procedure for designing microwave oscillators utilising a nonlinear PHEMT model, the negative resistance approach and the describing function concept. The procedure is applied in the design of a 24 GHz oscillator, which
Arkadiusz Lewandowski +3 more
doaj +1 more source
RF analysis of aggressively scaled pHEMTs [PDF]
30th European Solid-State Device Research Conference, 2000 No abstract avaliable.
Kalna, K. +4 more
openaire +1 more source