Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA [PDF]
Micromachines, 2022 In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor
Qian Lin +3 more
doaj +2 more sources
New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications [PDF]
Micromachines, 2021 Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high ...
Mohamed Fauzi Packeer Mohamed +6 more
doaj +2 more sources
Millimetre‐wave on‐chip SIW filtering crossover using 0.25 µm GaAs pHEMT technology
Electronics LettersThis letter presents a novel millimetre‐wave (mm‐wave) on‐chip substrate integrated waveguide (SIW) filtering crossover using 0.25 µm GaAs pHEMT technology. The design methodology of the proposed crossover is thoroughly illustrated.
Xin Zhou +5 more
doaj +2 more sources
W-Band GaAs pHEMT Power Amplifier MMIC Stabilized Using Network Determinant Function [PDF]
MicromachinesThis paper presents a W-band power amplifier monolithic microwave integrated circuit (MMIC) that is designed for high-precision millimeter-wave systems and fabricated using a 0.1 µm GaAs pHEMT process.
Seong-Hee Han, Dong-Wook Kim
doaj +2 more sources
An 8–18 GHz 90° Switched T-Type Phase Shifter [PDF]
Micromachines, 2023 This paper proposes a novel 8–18 GHz 90° switched T-type phase shifter (TPS). In contrast to the conventional TPS, the proposed TPS adds a compensation capacitance to greatly enhance the phase shifting capacity.
Jialong Zeng +5 more
doaj +2 more sources
A Wideband D-Band Frequency Sextupler Chain with High Harmonic Rejection in 100 nm GaAs pHEMT Technology [PDF]
MicromachinesThis paper presents a wideband D-band frequency sextupler chain implemented in a 100 nm GaAs pHEMT process. The proposed circuit comprises an input-stage frequency tripler, an inter-stage harmonic-rejection power amplifier, and an output-stage frequency ...
Pinqing Wang +4 more
doaj +2 more sources
Mechanisms of Degradation and Damage in GaAs PHEMT Low-Noise Amplifier Under Ultra-Short Microwave Pulses [PDF]
MicromachinesUltra-short microwave pulses with durations of 1 ns or less can go through a PIN limiter with low attenuation before the limiter responds and can therefore be directly injected into the subsequent low-noise amplifier (LNA).
Tongxin Guan +5 more
doaj +2 more sources
W-Band Low-Noise Amplifier with Improved Stability Using Dual RC Traps in Bias Networks on a 0.1 μm GaAs pHEMT Process [PDF]
MicromachinesThis paper demonstrates that potential oscillations in various frequency bands of monolithic microwave integrated circuits (MMICs) can be effectively suppressed using well-designed dual RC traps in the bias networks.
Seong-Hee Han, Dong-Wook Kim
doaj +2 more sources
Miniaturized Multilayer CPW pHEMT Amplifiers [PDF]
2008 European Microwave Integrated Circuit Conference, 2008 Compact pHEMT amplifiers, which are composed of newly developed miniaturized multilayer inductors and capacitors, have been designed, fabricated and characterised. Their measured performances are presented and compared with those of amplifiers composed of conventional planar components.
Sun, Q. +4 more
openaire +3 more sources
Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric [PDF]
Materials (Basel), 2016 This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO2) as a gate dielectric.
Kuan-Wei Lee +4 more
core +2 more sources