Results 11 to 20 of about 269 (178)
Electronics Letters, 2023 To improve the RX‐mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second‐order band‐stop filter in its TX path, which extends the bandwidth of isolation in the RX mode.
Jia‐Shiang Fu
doaj +2 more sources
Millimetre‐wave on‐chip SIW filtering crossover using 0.25 µm GaAs pHEMT technology
Electronics LettersThis letter presents a novel millimetre‐wave (mm‐wave) on‐chip substrate integrated waveguide (SIW) filtering crossover using 0.25 µm GaAs pHEMT technology. The design methodology of the proposed crossover is thoroughly illustrated.
Xin Zhou +5 more
doaj +2 more sources
Original Topology of GaAs-PHEMT Mixer [PDF]
2000 30th European Microwave Conference, 2000 An original topology of GaAs-PHEMT mixer is investigated under high conversion gain consideration.Mixer topology is based on "LO source-injection"concept,since RF, IF and LO signals are respectively applied on the gate,drain and source terminals of the mixing transistor.The conversion matrix formalism allows both the optimization of matching and ...
Dubuc, D., Parra, T., Graffeuil, J.
openaire +2 more sources
Annalen der Physik, Volume 535, Issue 12, December 2023., 2023 This article describes the implementation of low‐frequency axion haloscope setups inside the future BabyIAXO magnet. The RADES proposal has a potential sensitivity to the axion‐photon coupling down to values corresponding to the KSVZ model, in the mass range between 1 and 2 μ$\umu$eV.
Saiyd Ahyoune +29 more
wiley +1 more source
Long-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process [PDF]
ITM Web of Conferences, 2019 The transient radiation effects in 0.1 μm E/D pHEMT high-speed signal switches have been investigated. It was shown that a signal switch transient recovery time caused by pulsed irradiation can exceed 100 ms due to a switch control driver’s functional ...
Kuznetsov Aleksander +3 more
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Small, Volume 19, Issue 37, September 13, 2023., 2023 This work presents a comprehensive investigation of MXene films operating as microwave resonators under varying humidity. The effect of MXene flake sizes on the resonant performance under varying humidities is experimentally studied. To mitigate the power losses of MXene films upon degradation (e.g., humidity exposure), an active feedback configuration
Omid Niksan +4 more
wiley +1 more source
An assessment of automated extraction capabilities for small-signal modeling of various GaAs pHEMT processes [PDF]
ITM Web of Conferences, 2019 A new automated small-signal GaAs pHEMT model extraction technique based on the analytical approach followed by optimization is suggested. The performance capability of the technique is confirmed by successful small-signal modeling of pHEMTs manufactured
Popov Artem +5 more
doaj +1 more source
Combined Pulse Data Transmission and Indoor Localization Using 60-GHz-UWB MMIC Technology
IEEE Open Journal of Instrumentation and Measurement, 2023 This article presents a pulse radio transmission system operating in the millimeter-wave regime for simultaneous binary information transmission and location in an intrabuilding environment.
Christophe Loyez +3 more
doaj +1 more source
On‐chip GaAs‐based dual‐band bandpass filters/isolators (DBPFIs)
Electronics Letters, Volume 59, Issue 10, May 2023., 2023 MMIC co‐designed RF components exhibiting the collocated RF signal processing actions of a dual‐band bandpass filter and an RF isolator (DBPFI) are presented. They are based on in‐parallel cascaded bandpass filters/isolators that operate at two different frequencies and two multi‐resonant cells that are added in the RF input and RF output to increase ...
Andrea Ashley, Dimitra Psychogiou
wiley +1 more source
Electronics Letters, Volume 59, Issue 10, May 2023., 2023 This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow technique. Abstract This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN ...
Yuji Ando +4 more
wiley +1 more source