Results 11 to 20 of about 2,069 (221)
Failure Mechanism of pHEMT in Navigation LNA under UWB EMP [PDF]
Micromachines, 2022 With the development of microelectronic technology, the integration of electronic systems is increasing continuously. Electronic systems are becoming more and more sensitive to external electromagnetic environments.
Yonglong Li +5 more
doaj +3 more sources
New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications [PDF]
Micromachines, 2021 Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high ...
Mohamed Fauzi Packeer Mohamed +6 more
doaj +2 more sources
Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA [PDF]
Micromachines, 2022 In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor
Qian Lin +3 more
doaj +2 more sources
An 8–18 GHz 90° Switched T-Type Phase Shifter [PDF]
Micromachines, 2023 This paper proposes a novel 8–18 GHz 90° switched T-type phase shifter (TPS). In contrast to the conventional TPS, the proposed TPS adds a compensation capacitance to greatly enhance the phase shifting capacity.
Jialong Zeng +5 more
doaj +2 more sources
Electronics Letters, 2023 To improve the RX‐mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second‐order band‐stop filter in its TX path, which extends the bandwidth of isolation in the RX mode.
Jia‐Shiang Fu
doaj +2 more sources
Design and Implementation of Charge Pump Phase-Locked Loop Frequency Source Based on GaAs pHEMT Process [PDF]
Sensors, 2022 This paper realized a charge pump phase locked loop (CPPLL) frequency source circuit based on 0.15 μm Win GaAs pHEMT process. In this paper, an improved fully differential edge-triggered frequency discriminator (PFD) and an improved differential ...
Ranran Zhao +3 more
doaj +2 more sources
A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT [PDF]
Micromachines, 2023 To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility ...
Jiaxuan Li +5 more
doaj +2 more sources
Miniaturized Multilayer CPW pHEMT Amplifiers [PDF]
2008 European Microwave Integrated Circuit Conference, 2008 Compact pHEMT amplifiers, which are composed of newly developed miniaturized multilayer inductors and capacitors, have been designed, fabricated and characterised. Their measured performances are presented and compared with those of amplifiers composed of conventional planar components.
Sun, Q. +4 more
openaire +3 more sources
GaAs PHEMT PERFORMANCE INCREASE USING DELTA-DOPING IN THE FORM OF NANOWIRES OF TIN ATOMS
Российский технологический журнал, 2017 The PHEMT epitaxial structures with a doping profile in the form of tin nanowires were fabricated using vicinal GaAs substrate disoriented by 0.3° in relation to accurate orientation (100). Investigation of electron transport properties of the structures
A. E. Yachmenev +2 more
doaj +3 more sources
Electronic calibrator MMIC with frequency range up to 50 GHz for vector network analyzers in GaAs pHEMT technology [PDF]
ITM Web of Conferences, 2019 This paper presents design, simulation and measurements results of electronic calibrator with frequency range up to 50 GHz in GaAs pHEMT technology. MMIC was fabricated by using in-house 0,5 um pHEMT process.
Danilov Daniil +3 more
doaj +2 more sources