Results 21 to 30 of about 2,069 (221)
W-Band GaAs pHEMT Power Amplifier MMIC Stabilized Using Network Determinant Function [PDF]
MicromachinesThis paper presents a W-band power amplifier monolithic microwave integrated circuit (MMIC) that is designed for high-precision millimeter-wave systems and fabricated using a 0.1 µm GaAs pHEMT process.
Seong-Hee Han, Dong-Wook Kim
doaj +2 more sources
Millimetre‐wave on‐chip SIW filtering crossover using 0.25 µm GaAs pHEMT technology
Electronics LettersThis letter presents a novel millimetre‐wave (mm‐wave) on‐chip substrate integrated waveguide (SIW) filtering crossover using 0.25 µm GaAs pHEMT technology. The design methodology of the proposed crossover is thoroughly illustrated.
Xin Zhou +5 more
doaj +2 more sources
Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands [PDF]
MicromachinesIn this article, two wideband high-efficiency Class-J power amplifiers operating in X and Ku bands, respectively, are designed based on continuous mode.
Yang Yuan +3 more
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A 24 GHz PHEMT-based oscillator
Journal of Telecommunications and Information Technology, 2003 We present a systematic nonlinear procedure for designing microwave oscillators utilising a nonlinear PHEMT model, the negative resistance approach and the describing function concept. The procedure is applied in the design of a 24 GHz oscillator, which
Arkadiusz Lewandowski +3 more
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Scaling of pHEMTs to decanano dimensions [PDF]
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2001 The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions.
Karol Kalna +3 more
openaire +1 more source
Original Topology of GaAs-PHEMT Mixer [PDF]
2000 30th European Microwave Conference, 2000 An original topology of GaAs-PHEMT mixer is investigated under high conversion gain consideration.Mixer topology is based on "LO source-injection"concept,since RF, IF and LO signals are respectively applied on the gate,drain and source terminals of the mixing transistor.The conversion matrix formalism allows both the optimization of matching and ...
Dubuc, D., Parra, T., Graffeuil, J.
openaire +2 more sources
Long-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process [PDF]
ITM Web of Conferences, 2019 The transient radiation effects in 0.1 μm E/D pHEMT high-speed signal switches have been investigated. It was shown that a signal switch transient recovery time caused by pulsed irradiation can exceed 100 ms due to a switch control driver’s functional ...
Kuznetsov Aleksander +3 more
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Annalen der Physik, Volume 535, Issue 12, December 2023., 2023 This article describes the implementation of low‐frequency axion haloscope setups inside the future BabyIAXO magnet. The RADES proposal has a potential sensitivity to the axion‐photon coupling down to values corresponding to the KSVZ model, in the mass range between 1 and 2 μ$\umu$eV.
Saiyd Ahyoune +29 more
wiley +1 more source
An assessment of automated extraction capabilities for small-signal modeling of various GaAs pHEMT processes [PDF]
ITM Web of Conferences, 2019 A new automated small-signal GaAs pHEMT model extraction technique based on the analytical approach followed by optimization is suggested. The performance capability of the technique is confirmed by successful small-signal modeling of pHEMTs manufactured
Popov Artem +5 more
doaj +1 more source
Combined Pulse Data Transmission and Indoor Localization Using 60-GHz-UWB MMIC Technology
IEEE Open Journal of Instrumentation and Measurement, 2023 This article presents a pulse radio transmission system operating in the millimeter-wave regime for simultaneous binary information transmission and location in an intrabuilding environment.
Christophe Loyez +3 more
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