Results 21 to 30 of about 269 (178)
Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation [PDF]
ITM Web of Conferences, 2019 The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling ...
Gromov Dmitry, Elesin Vadim
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Supply Modulation Behavior of a Doherty Power Amplifier
IEEE Journal of Microwaves, 2021 This paper presents a study of supply modulation in a Doherty power amplifier (DPA). To validate a simplified theoretical model, a 3.5 GHz conventional symmetrical DPA using a 6-W packaged GaN pHEMT is designed for supply modulation of the main and/or ...
Dan Fishler, Zoya Popovic, Taylor Barton
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Electronics Letters, Volume 59, Issue 3, February 2023., 2023 This letter presents a method for implementing a 10–20 GHz low‐noise amplifier with simultaneous noise and input matching performance by using a frequency‐dependent negative feedback network. The analytical equation of the required load is also derived for the first time in order to eliminate the Mille effect caused by the gate‐drain parasitic ...
Ding He +4 more
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GaAs PHEMT PERFORMANCE INCREASE USING DELTA-DOPING IN THE FORM OF NANOWIRES OF TIN ATOMS
Российский технологический журнал, 2017 The PHEMT epitaxial structures with a doping profile in the form of tin nanowires were fabricated using vicinal GaAs substrate disoriented by 0.3° in relation to accurate orientation (100). Investigation of electron transport properties of the structures
A. E. Yachmenev +2 more
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An X/Ku band phase shifter with filter compensation technology
Electronics Letters, Volume 59, Issue 2, January 2023., 2023 This letter proposes an ultra‐wideband switched T‐type phase shifter, which covers the whole X/Ku band. The proposed switched T‐type phase shifter integrates a switched filter compensation structure, achieving a flat relative phase shift in broadband, which the conventional one cannot acquire.
Jialong Zeng +4 more
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Active and Passive Electronic Components, Volume 2023, Issue 1, 2023., 2023 An improved method of extracting small‐signal equivalent circuit model parameters for gallium nitride high electron mobility transistors (GaN HEMTs) is presented. This paper intends to present a method to extract the parasitic inductance and resistance of transistors based on the short‐test structure without the open‐circuit test structure.
Qingyu Yuan +6 more
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Physical/electromagnetic pHEMT modeling
IEEE Transactions on Microwave Theory and Techniques, 2003 An effective technique, which is based only on geometrical and physical data, is presented for the analysis of high-frequency FETs. The intrinsic part of this electron device is described by a quasi-two-dimensional hydrodynamic transport model, coupled to a numerical electromagnetic field time domain solver in three dimensions that analyzes the passive
CIDRONALI, ALESSANDRO +3 more
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IET Circuits, Devices &Systems, Volume 16, Issue 7, Page 553-568, October 2022., 2022 Abstract This article presents the design and optimisation of a sub‐1 GHz class‐F ultra‐low power (ULP) power amplifier (PA) in 65 nm Complementary Metal Oxide Semiconductor (CMOS) technology. An envelope tracking (ET) supply biasing technique is adopted to improve the efficiency of class‐F PA.
Muhammad Ovais Akhter +2 more
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The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
Dianzi Jishu Yingyong, 2018 This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant
Liu Yanpeng, Wei Qidi, Zhang Guohao
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EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES
Известия высших учебных заведений России: Радиоэлектроника, 2018 The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova +2 more
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