Results 21 to 30 of about 2,882 (217)
Annalen der Physik, Volume 535, Issue 12, December 2023., 2023 This article describes the implementation of low‐frequency axion haloscope setups inside the future BabyIAXO magnet. The RADES proposal has a potential sensitivity to the axion‐photon coupling down to values corresponding to the KSVZ model, in the mass range between 1 and 2 μ$\umu$eV.
Saiyd Ahyoune +29 more
wiley +1 more source
Small, Volume 19, Issue 37, September 13, 2023., 2023 This work presents a comprehensive investigation of MXene films operating as microwave resonators under varying humidity. The effect of MXene flake sizes on the resonant performance under varying humidities is experimentally studied. To mitigate the power losses of MXene films upon degradation (e.g., humidity exposure), an active feedback configuration
Omid Niksan +4 more
wiley +1 more source
On‐chip GaAs‐based dual‐band bandpass filters/isolators (DBPFIs)
Electronics Letters, Volume 59, Issue 10, May 2023., 2023 MMIC co‐designed RF components exhibiting the collocated RF signal processing actions of a dual‐band bandpass filter and an RF isolator (DBPFI) are presented. They are based on in‐parallel cascaded bandpass filters/isolators that operate at two different frequencies and two multi‐resonant cells that are added in the RF input and RF output to increase ...
Andrea Ashley, Dimitra Psychogiou
wiley +1 more source
Electronics Letters, Volume 59, Issue 10, May 2023., 2023 This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow technique. Abstract This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN ...
Yuji Ando +4 more
wiley +1 more source
Electronics Letters, Volume 59, Issue 3, February 2023., 2023 This letter presents a method for implementing a 10–20 GHz low‐noise amplifier with simultaneous noise and input matching performance by using a frequency‐dependent negative feedback network. The analytical equation of the required load is also derived for the first time in order to eliminate the Mille effect caused by the gate‐drain parasitic ...
Ding He +4 more
wiley +1 more source
An X/Ku band phase shifter with filter compensation technology
Electronics Letters, Volume 59, Issue 2, January 2023., 2023 This letter proposes an ultra‐wideband switched T‐type phase shifter, which covers the whole X/Ku band. The proposed switched T‐type phase shifter integrates a switched filter compensation structure, achieving a flat relative phase shift in broadband, which the conventional one cannot acquire.
Jialong Zeng +4 more
wiley +1 more source
The design and testing issues of radiation tolerant microwave amplifiers implemented in the domestic GaAs pHEMT 0.5 μm process [PDF]
ITM Web of Conferences, 2019 The investigation results of the possibility of manufacturing radiation tolerant microwave amplifiers implementing in domestic GaAs D-mode pHEMT 0.5 μm process are presented in this work.
Sotskov Denis +4 more
doaj +1 more source
Physical/electromagnetic pHEMT modeling
IEEE Transactions on Microwave Theory and Techniques, 2003 An effective technique, which is based only on geometrical and physical data, is presented for the analysis of high-frequency FETs. The intrinsic part of this electron device is described by a quasi-two-dimensional hydrodynamic transport model, coupled to a numerical electromagnetic field time domain solver in three dimensions that analyzes the passive
CIDRONALI, ALESSANDRO +3 more
openaire +3 more sources
Active and Passive Electronic Components, Volume 2023, Issue 1, 2023., 2023 An improved method of extracting small‐signal equivalent circuit model parameters for gallium nitride high electron mobility transistors (GaN HEMTs) is presented. This paper intends to present a method to extract the parasitic inductance and resistance of transistors based on the short‐test structure without the open‐circuit test structure.
Qingyu Yuan +6 more
wiley +1 more source
Development of a New pHEMT-Based Electrostatic Discharge Protection Structure
, 2011 Electrostatic discharge (ESD) protection structures in the GaAs technology are commonly constructed using enhancement-mode single-gate (SG) pseudomorphic high-electron mobility transistor (pHEMT) devices.
Juin J. Liou +7 more
core +2 more sources