Results 51 to 60 of about 2,069 (221)
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
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Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT
Frontiers in Materials, 2022 In this paper, The InxAl1-xAs graded buffer was inserted between the InAlAs buffer layer and the pseudomorphic In0.66Ga0.34As channel layer to improve material quality in channel.
Likun Ai +5 more
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A 12 GHz low noise amplifier with high-gain
Dianzi Jishu Yingyong, 2022 A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented ...
He Moxu, Hu Junjian, Gao Bo, He Liangjin
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K-Band High-Power Rectification With GaAs E-pHEMT Gated Anode Diodes
IEEE Journal of MicrowavesIn this paper, K-band high-power rectification and its efficiency are discussed in theoretical and experimental approaches. A gated anode diodes (GAD) configured with a gallium arsenide (GaAs) enhancement-mode pseudomorphic high-electron-mobility ...
Yuya Hirose +5 more
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Cryogenic Ultra-Low Noise Amplification - InP PHEMT vs. GaAs MHEMT
, 2013 We present a comparative study of 130 nm high electron mobility transistors (HEMTs) fabricated on pseudomorphic InGaAs/InAlAs/InP (InP PHEMT) and InGaAs/InAlAs/GaAs (GaAs MHEMT) intended for ultra-low noise amplifiers (LNAs).
Rodilla, Helena +15 more
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Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
AIP Advances, 2018 Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs ...
Chia-Chu Cheng +4 more
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Novel drain-less multi-gate pHEMT for electrostatic discharge (ESD) protection in GaAs technology
, 2013 Electrostatic discharge (ESD) protection structures in GaAs HEMT technology are commonly constructed using either stacked Schottky diode or Single-Gate clamp.
Qiang Cui +3 more
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PHEMT transistor models for accurate CAD of MMIC amplifier
Journal of Telecommunications and Information Technology, 2002 Accurate modeling of microwave monolithic integrated circuits (MMICs) is very desirable for the reason of high fabrication costs of GaAs circuits. Designers are trying to achieve the ``first trial success`` to lower costs and accelerate the introduction
Zbigniew Nosal
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Stabilisation of multi‐loop amplifiers using circuit‐based two‐port models stability analysis
IET Circuits, Devices and Systems, 2021 This article applies a systematic approach based on the normalized determinant function (NDF) theory to analyse stability in multi‐loop circuits and to design the required stabilization network.
Abbas Pasdar, Masoud Meghdadi, Ali Medi
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A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications
Applied Sciences, 2022 This paper describes a 2.4-GHz fully-integrated front-end receiver including a single-pole triple-throw (SP3T) switch and a low-noise amplifier (LNA) with bypass function, which was fabricated in a 0.25 μm GaAs pHEMT process.
Ruihao Yin +3 more
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