Results 51 to 60 of about 2,882 (217)
Analysis of an Impedance‐Adaptive W‐Band GaN MMIC Power Amplifier
IET Microwaves, Antennas &Propagation, Volume 20, Issue 1, January/December 2026.This paper presents a W‐band GaN MMIC power amplifier with an integrated reconfigurable matching network implemented in a 40‐nm GaN‐on‐SiC process. The three‐stage PA achieves 18.1 dB gain and 25.3 dBm output power at 77 GHz, demonstrating the feasibility of embedding reconfigurable elements in millimetre‐wave PAs.
Stefan Stroessner +4 more
wiley +1 more source
Enhancement/depletion PHEMT device [PDF]
, 2012 An embodiment of the present invention concerns a layered epitaxial structure for enhancement/ depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/ depletion PHEMT device that finds advantageous ...
Alessandro Chini, Claudio Lanzieri
core
Quantum-well infrared phototransistor with pHEMT structure [PDF]
, 2005 A quantum-well infrared phototransistor with a pseudomorphic high-electron mobility transistor (pHEMT) structure is presented. The proposed phototransistor uses four periods of a GaAs/Al0.3Ga0.7As (50 angstrom/120 angstrom) quantum-well absorption region,
Yang, Jong Ryul +4 more
core +1 more source
Design and Simulation of a Wideband 3‐Bit Phase Shifter for 4.5–5.5 GHz Applications
IET Circuits, Devices &Systems, Volume 2025, Issue 1, 2025.In this article, a phase shifter circuit designed for next‐generation communication systems was presented. Operating at 4.5–5.5 GHz, the circuit in question is a 3‐bit all‐pass LC lattice, which was initially analyzed using MATLAB. Following this analysis, the circuit was set up and simulated in advanced design system (ADS) using numerical values ...
Sena Taş +2 more
wiley +1 more source
Electronics Letters, Volume 61, Issue 1, January/December 2025.The design and experimental validation of an ultra‐wideband 256‐element active phased array operating across the 3–15 GHz frequency range is proposed in this letter. These findings highlight the potential of the array for multifunctional sensor applications on resource‐constrained platforms such as spaceborne and airborne systems, with stringent size ...
Daqun Yu +3 more
wiley +1 more source
, 2020 The numerical impact modeling of some external effects on devices based on AlGAs/InGaAs/GaAs heterostructures (pHEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition ...
Gudkov A.G. +11 more
core +1 more source
Gate recess study for high thermal stability pHEMT devices
EPJ Web of Conferences, 2017 Gate formation is a crucial steps, especially in FET fabrication process. At this steps, the characteristics are very much influenced by the processing parameters, particularly in the processing temperature. In this paper, we report the thermal stability
Isa M. Mohamad +7 more
doaj +1 more source
High Conversion Gain Self-Oscillating Mixer for 5G mm-wave Applications
ASM Science Journal, 2022 We develop in this paper, a high conversion gain self-oscillating mixer (SOM) for 5G mm-wave applications using commercial 0.15µm GaAs PHEMT from UMS foundry.
Abdelhafid ES-SAQY +6 more
doaj +1 more source
A K‐Band 4‐Channel Hybrid‐Packaged Phased‐Array Receiver With 1.6‐dB NF and 60‐dB Transmit Rejection
Electronics Letters, Volume 61, Issue 1, January/December 2025.The design utilizes WLCSP technology to integrate four GaAs LNAs and a 4‐channel CMOS beamformer into a single package for K/Ka‐band SATCOM. The GaAs IC features a 2‐stage self‐biased LNA and a 5th‐order band‐stop filter, achieving a low cascaded NF and high TX rejection.
Bai Song, Yong Fan
wiley +1 more source
A 2.4-V 30-dBm 61.5%-efficiency power PHEMT for wireless communications [PDF]
, 1999 A high efficiency 2.4-V operation dual delta doped AlGaAs/ InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) for personal communications has been developed.
Lee, Di-Houng +3 more
core +1 more source