Results 51 to 60 of about 269 (178)
A K‐Band 4‐Channel Hybrid‐Packaged Phased‐Array Receiver With 1.6‐dB NF and 60‐dB Transmit Rejection
Electronics Letters, Volume 61, Issue 1, January/December 2025.The design utilizes WLCSP technology to integrate four GaAs LNAs and a 4‐channel CMOS beamformer into a single package for K/Ka‐band SATCOM. The GaAs IC features a 2‐stage self‐biased LNA and a 5th‐order band‐stop filter, achieving a low cascaded NF and high TX rejection.
Bai Song, Yong Fan
wiley +1 more source
Mechanism of AlGaAs/InGaAs pHEMT Nonlinear Response Under High-Power Microwave Radiation
IEEE Journal of the Electron Devices Society, 2020 With the development of microelectronic technology, the reliability of devices in a complex electromagnetic environment has become one of the greatest challenges in the semiconductor industry.
Yu-Qian Liu +5 more
doaj +1 more source
A 76–81 GHz GaAs pHEMT Transceiver Front‐End MMIC for FMCW Radar System
Electronics Letters, Volume 61, Issue 1, January/December 2025.A 76–81 GHz transceiver front‐end monolithic microwave integrated circuit for W‐band frequency modulated continuous wave radar front‐end miniaturization is fabricated via 0.1 µm GaAs pHEMT technology, integrating mixer, directional coupler, filter and other modules.
Chunyu Pu, Xiaofeng Yang
wiley +1 more source
Effect of impact ionization in scaled pHEMTs [PDF]
8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534), 2002 The effect of impact ionization on pseudomorphic high electron mobility transistors is studied using Monte Carlo simulations when these devices are scaled into deep decanano dimensions. The scaling of devices with gate lengths of 120, 90, 70, 50 and 30 nm has been performed in both lateral and vertical directions. The impact ionization is treated as an
Kalna, K. +3 more
openaire +1 more source
Gate recess study for high thermal stability pHEMT devices
EPJ Web of Conferences, 2017 Gate formation is a crucial steps, especially in FET fabrication process. At this steps, the characteristics are very much influenced by the processing parameters, particularly in the processing temperature. In this paper, we report the thermal stability
Isa M. Mohamad +7 more
doaj +1 more source
Active quasi circulator: Comprehensive review and performance comparison
Engineering Reports, Volume 6, Issue 6, June 2024.To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan +2 more
wiley +1 more source
Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications
IEEE Access, 2022 This paper presents the design of a dual-band power amplifier (PA) featuring similar performance at 28 GHz and 38 GHz. In the new radio (NR) of the fifth generation (5G) communication system, the inter-band carrier aggregation technique is commonly ...
Yi-Fan Tsao +3 more
doaj +1 more source
A compact 60‐GHz on‐chip bandpass filter in GaAs technology
Electronics Letters, Volume 60, Issue 7, April 2024.A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm. Abstract A compact 60‐GHz
Kai‐Da Xu +3 more
wiley +1 more source
A comprehensive packaging solution from DC to 113 GHz for InGaAs amplifiers
Electronics Letters, Volume 60, Issue 6, March 2024.This letter describes an ultra‐broadband amplifier package operating from DC to 113 GHz, boasting a 12.5 dB average gain. It employs InGaAs amplifier IC in metamorphic high‐electron‐mobility‐transistor technology, mounted on an aluminum submount for low thermal resistance, with 1 mm connectors for ease of use.
Luca Valenziano +6 more
wiley +1 more source
Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers [PDF]
Radioengineering, 2015 Although practically all function blocks of the satellite navigation receivers are realized using the CMOS digital integrated circuits, it is appropriate to create a separate low noise antenna preamplifier based on a low noise pHEMT. Such an RF front end
J. Dobes +7 more
doaj