50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node [PDF]
, 2006 Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date.
Elgaid, K. +5 more
core +1 more source
RF and IF mixer optimum matching impedances extracted by large-signal vectorial measurements [PDF]
, 2003 This paper introduces a new technique that allows us to measure the admittance conversion matrix of a two-port device,using a Nonlinear Vector Network Analyzer.This method is applied to extract the conversion matrix of a 0.2 µµµµm pHEMT,driven by a 4.8 ...
Cidronali, A. +8 more
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Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
doaj +1 more source
A 12 GHz low noise amplifier with high-gain
Dianzi Jishu Yingyong, 2022 A two-stage low noise amplifier(LNA) with high gain and low power is proposed by analyzing the characteristics of GaAs pHEMT devices. A two-stage structure is used to increase the gain of the low noise amplifier, a shared current structure is presented ...
He Moxu, Hu Junjian, Gao Bo, He Liangjin
doaj +1 more source
W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth [PDF]
, 2002 Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1- µµµµm GaAs MMIC process.
Chu, Tah-Hsiung +2 more
core +1 more source
K-Band High-Power Rectification With GaAs E-pHEMT Gated Anode Diodes
IEEE Journal of MicrowavesIn this paper, K-band high-power rectification and its efficiency are discussed in theoretical and experimental approaches. A gated anode diodes (GAD) configured with a gallium arsenide (GaAs) enhancement-mode pseudomorphic high-electron-mobility ...
Yuya Hirose +5 more
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Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT
Frontiers in Materials, 2022 In this paper, The InxAl1-xAs graded buffer was inserted between the InAlAs buffer layer and the pseudomorphic In0.66Ga0.34As channel layer to improve material quality in channel.
Likun Ai +5 more
doaj +1 more source
Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: a simulation study [PDF]
, 1998 The impact of In<sub>x</sub>Al<sub>1-x</sub>As strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated.
Asenov, A. +4 more
core +1 more source
Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
AIP Advances, 2018 Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs ...
Chia-Chu Cheng +4 more
doaj +1 more source
A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications
Applied Sciences, 2022 This paper describes a 2.4-GHz fully-integrated front-end receiver including a single-pole triple-throw (SP3T) switch and a low-noise amplifier (LNA) with bypass function, which was fabricated in a 0.25 μm GaAs pHEMT process.
Ruihao Yin +3 more
doaj +1 more source