Direct observation of Gain compression mechanisms in PHEMT by RF Gate and Drain Currents
, 2002 Average rf gate and drain currents can be used to determine gain compression mechanisms for PHEMTs with different pinch-off voltages. Knee voltage, pinch-off voltage, breakdown voltage and Imax clip output I-V waveform of a PHEMT and cause gain ...
Huang, G. W. +3 more
core +1 more source
Thermal Memory Effects on the Linearity of a GaAs PHEMT
, 2004 This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation.
Accillaro, C. +8 more
openaire +3 more sources
Epitaxial technology for the monolithic integration of HBT and PHEMT
, 2010 本研究以有機金屬化學沉積法(Metal Organic Chemical Vapor Disposition, MOCVD )成長雙載子、場效電晶體單石積體結構(BiFET)。我們所使用的BiFET結構，其下層為AlGaAs PHEMT結構，而上層為InGaP HBT結構，其中HBT的次集極層也同時用作PHEMT結構的接觸層。我們在次集極層下成長一層heavily n-doped InGaP，作為etching-stop layer，用以控制gate recess的深度位置 ...
曾敏男, Tseng, Min-Nan
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DC characterization of InGaAs/InAlAs/InP based pseudomorphic HEMT (pHEMT)
, 2012 An epitaxial structure comprising depletion mode In0.7Ga 0.3As/In0.52Al0.48As/InP pHEMT has been simulated using SILVACO. The main objective of our work was to incorporate a highly strained pseudomorphic In0.7Ga0.3As channel layer and study the effects ...
H.T. Butt +7 more
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Codesign of
IEEE Access, 2019 In this paper, a novel concurrent design of integrated PIN-diode based limiter and low noise amplifier (LNA) is presented for Ka-band MMICs fabricated using a combined PIN/0.15-μm-pHEMT technology.
Lin Yang +5 more
doaj +1 more source
Large-signal reliability of pHEMT power amplifier
, 2017 Power amplifier and pHEMT are measured to extract the X-parameters from PNA-X. The X-parameters model is used to simulate and the practical of the model could be validated.
Guo , Zhe-Zhi
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Novel electrostatic discharge (ESD) protection solution in GaAs pHEMT technology
, 2012 This paper develops an effective electrostatic discharge (ESD) protection solution for GaAs-based integrated circuits based on a novel multi-gate pHEMT.
Juin J. Liou +3 more
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Distributed GaAs-PHEMT 0.2um preamplifier for 20 Gbit/s photoreceivers. [PDF]
, 1996 A 20 Gb/s photoreceiver module has been realized with a transimpedance of 63 dBOhm. The bandwidth is 16 GHz, and the average equivalent input noise is 13 pA/(Hz)1/2 up to 14 GHz. This photoreceiver is realized by cascading three distributed preamplifiers
Joly, C. +4 more
core +1 more source
Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications
, 2016 Linear modelling of novel InGaAs/InAlAs/InP pHEMT for low noise applications is substantial to the future transistors that will operate in high speed and low noise conditions. The novel pHEMT is constructed by sandwiching two different materials together
Ahmad, N. +17 more
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Non linear PHEMT model and it application in a high gain amplifier design in the 8-12 GHz band
, 2000 En el presente trabajo de tesis se presenta el diseño de un amplificador de alta ganancia en el rango de frecuencia de 8-12 GHz usando un PHEMT operando al punto de polarización donde ocurre la máxima transconductancia (Gm). Este diseño se lleva a cabo a
José Alberto Ramírez Aguilar
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