Results 91 to 100 of about 3,802 (219)

Design of a Broadband Amplifier for High Speed Applications [PDF]

, 2002
This paper provides comprehensive insight into the design approach followed for an amplifier dedicated to high speed base band signals. To demonstrate the methodology, an amplifier consisting of nine PHEMT cascode cells within a distributed amplifier ...
Camargo, E., Hajji, R., Ohnishi, H., Parker, S., Virk, R.S.   +4 more
core   +1 more source

Surface states on n-type Al0.24Ga0.76As characterized by deep-level transient spectroscopy [PDF]

, 2001
Capacitance deep-level transient spectroscopy (DLTS) was used to study surface states on aluminum compounds. Two hole-like traps were observed in pseudomorphic high-electron-mobility transistor with a multifinger gate.
Balakrishnan, Barton, Best, Blight, Choi, Ghezzi, Gombia, Harrang, J.-L. Lee, K. J. Choi, Ladbrooke, Lang, Lee, Lee, Lee, Magno, Missous, Moon, Mooney, Nannichi, Ozeki, Shan, Spicer, Weber, Yamanaka, Young, Zhang, Zhao, Zhao   +28 more
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The MMIC design of GaAs bi-phase voltage variable attenuator

Dianzi Jishu Yingyong, 2019
A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented.
Yuan Yifei, Zhang Bo
doaj   +1 more source

Loss compensation in Metamaterials through embedding of active transistor based negative differential resistance circuits

, 2012
This paper presents an all-electronic approach for loss compensation in metamaterials. This is achieved by embedding active-transistors based negative differential resistance (NDR) circuits in each unit cell of the metamaterial lattice.
Auzanneau, Boardman, Chen, Craninckx, Dong, Hrabar, Jelinek, Pendry, Pendry, Popa, Ramakrishna, Sameer Sonkusale, Schurig, Shelby, Shrekenhamer, Smith, Soukoulis, Tretyakov, Veselago, Wang, Wangren Xu, Willie J. Padilla, Yuan   +22 more
core   +1 more source

High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication

Journal of Electronic Science and Technology
In the era of rapidly expanding wireless technologies, the push for larger spectrum efficiency and better signal integrity has intensified the need for high-efficient and low noise amplifiers (LNAs). A two-stage LNA based on the GaAs/InGaAs pseudomorphic
Omar S. Abdulwahid, Ahmad N. Abdulfattah, Saad G. Muttlak, Mohammadreza Sadeghi, Mohamed Missous   +4 more
doaj   +1 more source

Microelectromechanical Systems (MEMS) Resistive Heaters as Circuit Protection Devices [PDF]

, 2013
With increased opportunities for the exploitation (i.e., reverse engineering) of vulnerable electronic components and systems, circuit protection has become a critical issue.
Coutu, Ronald A., Jr., Ostrow, Scott A.
core   +1 more source

Modelling of quasi-optical arrays [PDF]

, 1999
A model for analyzing quasi-optical grid amplifiers based on a finite-element electromagnetic simulator is presented. This model is deduced from the simulation of the whole unit cell and takes into account mutual coupling effects.
De Lisio, Michael P., Dickman, Blythe, Preventza, Polly, Rosenberg, James J., Rutledge, David B., Sovero, Emilio   +5 more
core   +1 more source

Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f_T of 440 GHz for millimeterwave imaging receivers applications [PDF]

, 2005
The 50 nm m-HEMT exhibits extremely high f_T, of 440GHz, low F_min of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased ...
Elgaid, K., Holland, M., McLelland, H., Moran, D., Thayne, I.G.   +4 more
core   +1 more source

LFI 30 and 44 GHz receivers Back-End Modules [PDF]

, 2009
The 30 and 44 GHz Back End Modules (BEM) for the Planck Low Frequency Instrument are broadband receivers (20% relative bandwidth) working at room temperature.
A Mediavilla, A Mennella, A Wilkinson, A. Mennella ., B Aja, B. Aja ., D Kettle, E Artal, E Blanco, E García, E Martinez-Gonzalez, E.J. Blum, F Cuttaia, G.L. Matthaei, J P Pascual, L Pradell, L Stringhetti, M Bara, M Bersanelli, M L de la Fuente, M Tomasi, M. Bersanelli ., N Mandolesi, N Roddis, N. Mandolesi ., P de Paco, R C Butler, R Davis, R.J. Davis .   +28 more
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On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices [PDF]

, 2004
Large-signal dynamic modelling of 111-V FETs cannot he simply based on DC i/v characteristics, when accurate performance prediction is needed. In fact, dispersive phenomena due to self-heating and/or traps (surface state densities and deep level ...
Filicori, F., Raffo, A., Santarelli, A., Traverso, P.A., Vannini, G.   +4 more
core   +1 more source