Results 91 to 100 of about 2,882 (217)
Design of PHEMT Diodes for MMIC Mixer Applications [PDF]
, 2000 This paper presents a simple approach for optimizing the dimensions of PHEMT diodes as well as predicting their mixer performance up to millimeter wave frequencies.
Bos, Thomas A., Camargo, E.
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The Analysis of HBT and PHEMT Power Devices
, 2014 隨著無線通訊的蓬勃發展，對功率放大器的要求，除了輸出功率、高附加功率外，高線性度的要求也愈來愈重要。對功率放大器的效能而言，影響最大的莫過於功率元件本身。目前功率元件中又以PHEMT和HBT應用最廣。故本篇論文針對PHEMT和HBT二種重要的功率元件做功率上的量測。並對增益壓縮機制和不同負載阻抗作分析和了解。 本論文分為三個部份，第一部份主要為介紹功率量測的原理以及負載阻抗的一些基本觀念。第二部份則分析PHEMT的增益壓縮機制如膝部電壓、夾止電壓、崩潰電壓 ...
Peng, AnSam, 彭安賢
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Miniature Multi-Band Absorptive Bandstop Filter Designs Using Bridged-T Coils
IEEE Access, 2018 In this paper, miniature absorptive bandstop filters (ABSFs) with one to three stopbands are demonstrated. First, the proposed single-band ABSF is realized by the introduction of one lossy resonator to a conventional stub bandstop filter, while the ...
En-Wei Chang, Yo-Shen Lin
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Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMPT and PHEMT Structures
, 1995 Symmetric delta-doped InGaP and AlGaAs PHEMT structures have been grown by organometallic vapor phase epitaxy with properties that approach those of MBE grown AlGaAs structures.
Monahan, T. +19 more
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Hotspot Estimation for Antenna-Less Backscatter Communication Using Excited Impedance Analysis [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper proposes a novel method for determining the optimal mounting position of nonlinear components for antenna-less backscatter communication using ground (GND) plane patterns on printed circuit boards (PCB).
Junwoo Cha +2 more
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Precise Characterization and Multiobjective Optimization of Low Noise Amplifiers [PDF]
Radioengineering, 2015 Although practically all function blocks of the satellite navigation receivers are realized using the CMOS digital integrated circuits, it is appropriate to create a separate low noise antenna preamplifier based on a low noise pHEMT. Such an RF front end
J. Dobes +7 more
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MBE生长的高质量AlGaAs/InGaAs双δ掺杂PHEMT结构的材料
, 2000 用MBE方法制备的PHEMT微结构材料，其2DEG浓度随材料结构的不同在2.0-4.0×10~(12)cm~(-2)之间，室温霍耳迁移率在5000-6500cm~2·V~(-1)·s~(-1)之间。制备的PHEMT器件，栅长为0.7μm的器件的直流特性：I_(dss)～280mA/mm,I_(max)～520-580mA/mm,g_m～320-400mS/mm,BV_(DS)>15V(I_(DS)=1mA/mm),BV_(GS)>10V,微波特性：P_0～600-900mW/mm,G～6-10dB,η_(
曹昕 +6 more
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Active and Passive Electronic Components, 2016 A new high-efficiency K-band MMIC medium-power amplifier (PA) is designed with multiharmonic matching using GaAs pHEMT process technology. It has an operation frequency centered at 26 GHz with a bandwidth of 2 GHz.
Y. Shang +9 more
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The MMIC design of GaAs bi-phase voltage variable attenuator
Dianzi Jishu Yingyong, 2019 A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented.
Yuan Yifei, Zhang Bo
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Small signal modelling of novel InGaAs/InAlAs/InP pHEMT for high frequency applications
, 2016 HEMT is a GaAs based field effect transistor that retains higher cutoff frequency compared to silicon based transistors. Alternatively, pHEMT enhance the performance of the HEMT in term of leakage, current conduction and the cutoff frequency of the ...
Ahmad, N. +17 more
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