Results 181 to 190 of about 3,715 (198)

ESD protection for pHEMT MMIC amplifiers

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05., 2005
In this paper, we discuss ESD characterization data on typical circuit elements used in GaAs pHEMT MMIC amplifiers. At microwave and mm-wave frequencies, basic circuit performance considerations drive design decisions. Human body model (HBM) data for basic circuit elements can provide guidance for layout and topology trade-offs to improve ESD ...
J.M. Beall, G.I. Drandova
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A 3.5GHz GaAs pHEMT Power Amplifier

2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2018
In this paper, a monolithic integrated power amplifier based on 0.25um GaAs pHEMT process working in 3.36GHz-3.65GHz is designed, fabricated and measured. Integrated microstrip line is used as the passive load of the power stage; input and output LC matching network are designed.
Linzhi Liu, Qianyin Xiang, Mingye Fu, Quanyuan Feng   +3 more
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PHEMTs - Emerging High Performance Devices

IEEE Princeton Section Sarnoff Symposium, 1995
PHEMTs, grown on GaAs and InP, due to their extremely high mobility, offer significant performance advantages from UHF to W-band: the lowest noise figures at the highest gains and very high power at the highest efficiencies. These performance improvements enable the development of major advances in systems applications.
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Patterning 0.05 μm gate on pHEMT

Microelectronics Journal, 2009
The pseudomorphic high electron mobility transistor (pHEMT) was designed with 0.05@mm gate. The reduced size of the gate provides immediate advantage for high frequency, better linearity and higher breakdown voltage. The design of extremely small gate, below resolution of conventional optical lithography, was achieved by developing a process of ...
S. Mil'shtein, P. Kurlawala
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Low cost Ka-band 7W GaAs PHEMT based HPA with GaN PHEMT equivalent performance

2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015
This paper describes a very low cost MMIC high power amplifier (HPA) with output power of over 7W. The MMIC was fabricated using a GaAs PHEMT process with a state-of-the-art compact die area of 13.7mm2. The HPA MMIC contains a phase and amplitude compensated output power combiner and super low loss phase compensated inter-stage matching networks.
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GaAs MMIC pHEMT gate metal thermometry

2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013
A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionization can interfere with the measurement, but can be avoided with correct choice of bias.
Bryan K. Schwitter, Anthony E. Parker, Sayed A. Albahrani, Anthony P. Fattorini, Michael C. Heimlich   +4 more
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Practical mm-Wave pHEMT Frequency Multiplier

International Journal of Infrared and Millimeter Waves, 2002
Details on a broadband MMIC frequency doubler targeting the MVDS market are presented. The design evolution from an individual pHEMT device to the complete practical doubler realisation is discussed. The doubler MMIC, which has been fabricated using the GMMT H40 GaAs process, has been evaluated in a customised package.
Eoin O'Ciardha, Jason Lynch, Brendan Lyons, Sean Cremin, Sverre Lidholm   +4 more
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AlGaAs/InGaAs/GaAs heterostructures based pHEMT

12th International Conference Microwave and Telecommunication Technology, 2002
The results of developing a pHEMT on AlGaAs/InGaAs heterostructures grown on a GaAs substrate are presented. The structures have electron mobility of 6400 cm/sup 2//(V/spl middot/s) and surface electron density of 1.2/spl times/10/sup 12/ cm/sup -2/ at room temperature.
N.A. Maleev, A.E. Zhukov, A.P. Kovsh, V.M. Ustinov, V.I. Khitko, A.S. Shulenkov   +5 more
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Development for millimeter-wave PHEMT mixer

25th International Conference on Infrared and Millimeter Waves (Cat. No.00EX442), 2002
The analysis and optimizing design for PHEMT drain mixer circuit in Ka-band is given in this paper. The nonlinear equivalent circuit and its parameters are simulated and obtained from the small signal S-parameter and the DC measurements of the PHEMT device. The drain mixer circuit is designed with optimization, making use of the harmonic balance method
null Xu Ruimin, null Xiao Shaoqiu, null Yan Bo   +2 more
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A 10GHz PHEMT Dielectric Resonator Oscillator

2006 International RF and Microwave Conference, 2006
In all microwave systems, oscillators represent the basic microwave energy source. The main problem in oscillator design is the phase noise. This paper will discuss the design and fabrication of a 10GHz parallel feedback type GaAs PHEMT dielectric resonator oscillator.
Nor Muzlifah Mahyuddin, Mohd Fadzil Ain, Syed Idris Syed Hassan, Mandeep Singh   +3 more
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