Results 11 to 20 of about 3,715 (198)

A novel Q‐band asymmetric T/R switch in GaAs pHEMT using second‐order band‐stop filter for wideband RX‐mode isolation

Electronics Letters, 2023
To improve the RX‐mode isolation of asymmetric T/R switches, a new circuit topology is proposed. The proposed asymmetric T/R switch topology features a second‐order band‐stop filter in its TX path, which extends the bandwidth of isolation in the RX mode.
Jia‐Shiang Fu
doaj   +2 more sources

Millimetre‐wave on‐chip SIW filtering crossover using 0.25 µm GaAs pHEMT technology

Electronics Letters
This letter presents a novel millimetre‐wave (mm‐wave) on‐chip substrate integrated waveguide (SIW) filtering crossover using 0.25 µm GaAs pHEMT technology. The design methodology of the proposed crossover is thoroughly illustrated.
Xin Zhou, Siyuan Lu, Desen Li, Daqi Ding, Chi‐Hou Chio, Kam‐Weng Tam   +5 more
doaj   +2 more sources

Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands [PDF]

Micromachines
In this article, two wideband high-efficiency Class-J power amplifiers operating in X and Ku bands, respectively, are designed based on continuous mode.
Yang Yuan, Xuesong Zhao, Jingxin Fan, Zhongjun Yu   +3 more
doaj   +2 more sources

A 24 GHz PHEMT-based oscillator

Journal of Telecommunications and Information Technology, 2003
We present a systematic nonlinear procedure for designing microwave oscillators utilising a nonlinear PHEMT model, the negative resistance approach and the describing function concept. The procedure is applied in the design of a 24 GHz oscillator, which
Arkadiusz Lewandowski, Wilfred Mwema, Günter Kompa, Wojciech Wiatr   +3 more
doaj   +2 more sources

A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques [PDF]

Micromachines
This paper presents a highly integrated C-band RF transceiver front-end design consisting of two Single Pole Double Throw (SPDT) transmit/receive (T/R) switches, a Low Noise Amplifier (LNA), and a Power Amplifier (PA) for Ultra-Wideband (UWB) positioning
Boyang Shan, Haipeng Fu, Jian Wang
doaj   +2 more sources

Electronic calibrator MMIC with frequency range up to 50 GHz for vector network analyzers in GaAs pHEMT technology [PDF]

ITM Web of Conferences, 2019
This paper presents design, simulation and measurements results of electronic calibrator with frequency range up to 50 GHz in GaAs pHEMT technology. MMIC was fabricated by using in-house 0,5 um pHEMT process.
Danilov Daniil, Drobotun Nikolai, Medvedev Aleksei, Ulyanov Vladimir   +3 more
doaj   +1 more source

Original Topology of GaAs-PHEMT Mixer [PDF]

2000 30th European Microwave Conference, 2000
An original topology of GaAs-PHEMT mixer is investigated under high conversion gain consideration.Mixer topology is based on "LO source-injection"concept,since RF, IF and LO signals are respectively applied on the gate,drain and source terminals of the mixing transistor.The conversion matrix formalism allows both the optimization of matching and ...
Dubuc, D., Parra, T., Graffeuil, J.
openaire   +2 more sources

A Proposal for a Low‐Frequency Axion Search in the 1–2 μ$\umu$ eV Range and Below with the BabyIAXO Magnet

Annalen der Physik, Volume 535, Issue 12, December 2023., 2023
This article describes the implementation of low‐frequency axion haloscope setups inside the future BabyIAXO magnet. The RADES proposal has a potential sensitivity to the axion‐photon coupling down to values corresponding to the KSVZ model, in the mass range between 1 and 2 μ$\umu$eV.
Saiyd Ahyoune, Alejandro Álvarez Melcón, Sergio Arguedas Cuendis, Sergio Calatroni, Cristian Cogollos, Jack Devlin, Alejandro Díaz‐Morcillo, David Díez‐Ibáñez, Babette Döbrich, Javier Galindo, Juan Daniel Gallego, Jose María García‐Barceló, Benito Gimeno, Jessica Golm, Yikun Gu, Louis Herwig, Igor Garcia Irastorza, Antonio Jose Lozano‐Guerrero, Chloé Malbrunot, Jordi Miralda‐Escudé, Juan Monzó‐Cabrera, Pablo Navarro, Jose Ramón Navarro‐Madrid, Javier Redondo, José Reina‐Valero, Kristof Schmieden, Tim Schneemann, Marc Siodlaczek, Stefan Ulmer, Walter Wuensch   +29 more
wiley   +1 more source

Long-term transient radiation effects in high-speed signal switches implemented in 0.1 um E/D pHEMT process [PDF]

ITM Web of Conferences, 2019
The transient radiation effects in 0.1 μm E/D pHEMT high-speed signal switches have been investigated. It was shown that a signal switch transient recovery time caused by pulsed irradiation can exceed 100 ms due to a switch control driver’s functional ...
Kuznetsov Aleksander, Elesin Vadim, Usachev Nikolay, Chukov George   +3 more
doaj   +1 more source

Scaling of pHEMTs to decanano dimensions [PDF]

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2001
The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions.
K. Kalna, A. Asenov, K. Elgaid, I. Thayne   +3 more
openaire   +1 more source