High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers [PDF]
SensorsThis study presents the development of a high-speed, broadband InGaAs/InP photodiode suitable for advanced sensing and optical detection applications across the critical wavelength range of 850–1550 nm.
Guohao Yang +4 more
doaj +2 more sources
Preliminary investigation on performance of photodiode sensor as a dosimeter
Biomedical Photonics, 2021 Radiation dosimetry in the health and medicine field is crucial to ensure there is no unnecessary ionizing radiation exposure to patients and personnel.
Y. Md Radzi, N. Zulkafli, A. Omar
doaj +1 more source
Silicon four element p-i-n photodiode with improved characteristics
Радіоелектронні і комп'ютерні системи, 2023 This article presents the results of the development of silicon coordinate p-i-n photodiodes (PD) with improved parameters. The technological possibilities of reducing the gaps between the responsive areas of multi-element PDs were studied.
Mykola Kukurudziak
doaj +1 more source
Developing a Portable Spectrometer to Detect Chemical Contaminants in Irrigation Water
Agriculture, 2023 Water pollution is a critical issue since it can severely affect health and the environment. The purpose of the study is to develop a portable spectrometer (ESP32-based spectrometer) to detect chemical contaminants in irrigation water by observing the ...
Siti Nadhirah Zainurin +4 more
doaj +1 more source
Радіоелектронні і комп'ютерні системи, 2022 The sensitivity of the photodiode will depend on the amount of radiation power that it must register. The characteristics of a photodiode, as is known, are determined by its design.
Yuri Dobrovolsky, Yurii Sorokatyi
doaj +1 more source
A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C
IEEE Journal of the Electron Devices Society, 2020 An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and ...
Shuoben Hou +5 more
doaj +1 more source
Single-Point Detection Architecture via Liquid Crystal Modulation for Hyperspectral Imaging Systems
IEEE Access, 2020 Hyperspectral imaging (HSI) architectures can acquire one-dimension of spatial information and one-dimension of spectral information on a two-dimensional image sensor for an image, such as in the traditional line-scan HSI architecture.
C. Harrison Brodie +1 more
doaj +1 more source
Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [PDF]
, 2012 1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection ...
Allegret, Stephane +5 more
core +1 more source
Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process [PDF]
, 2009 Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18 μm technology dedicated to imaging. The ionizing dose and displacement damage effects were discriminated and localized thanks to 60Co irradiations and large ...
Bernard, Frédéric +4 more
core +2 more sources
The Effect of Bias and Frequency on Amplitude to Phase Conversion of Photodiodes
IEEE Photonics Journal, 2020 Fluctuation of the optical power incident on a photodiode will cause phase variation of the electrical signal. This phenomenon is known as amplitude-to-phase (AM-to-PM) conversion. The effects of bias voltage and test frequency on AM-to-PM conversion are
Jiazheng Sun +4 more
doaj +1 more source