Results 11 to 20 of about 150,928 (284)
Silicon p-i-n photodiode with increased pulse sensitivity
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2021 P-n junction semiconductor photodetectors are widely used in various fields of science and technology, including automation and telecontrol, instrumentation equipment, tracking systems, guidance, etc. The most demanded photoelectronic devices are silicon
Mykola Kukurudziak, Yuriy Dobrovolsky
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Performance evaluation of a new 30 μm thick GaAs x-ray detector grown by MBE
Materials Research Express, 2021 A circular mesa (400 μm diameter) GaAs p ^+ -i-n ^+ photodiode with a 30 μm thick i layer was characterized for its performance as a detector in photon counting x-ray spectroscopy at 20 °C.
G Lioliou +5 more
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Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]
, 2011 Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
Cervantes, Paola +5 more
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High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate [PDF]
, 1983 A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65 ...
Bar-Chaim, N. +3 more
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Ontare, 2022 This work presents a general and introductory review of visible light communication. Visible light communication or VLC refers to wireless communications using a spectral range from 380 to 780 nm for the transmission of information.
Juan Felipe Gutiérrez +1 more
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Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater [PDF]
, 1984 A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate.
Bar-Chaim, N. +3 more
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Photonics, 2021 In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type In0.
Naseem +13 more
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Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]
, 2012 Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Cervantes, Paola +12 more
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Volt: Jurnal Ilmiah Pendidikan Teknik Elektro, 2017 This is a line follower robot is a robot designed to assist humans in activities such as throw away trash in the shopping center. On robot sensors added a line that consists of photodiode and LED.
Yurni Oktarina +2 more
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Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology [PDF]
, 2003 The influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed.
Annema, Anne Johan +2 more
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