Results 21 to 30 of about 150,928 (284)

Characteristics of photodiodes with «intrinsic oxide — InSe» structure, irradiated with high-energy electrons [PDF]

Технологія та конструювання в електронній апаратурі, 2012
The article describes the research of the influence of electrons with an effective energy of 12 MeV in the 0,33–33 Mrad dose range on the electrical and photovoltaic properties of photodiodes with «intrinsic oxide — p-InSe» structure.
O. N. Sydor, O. A. Sydor, Z. D. Kovalyuk, V. I. Dubinko   +3 more
doaj   +1 more source

Automated characterization of single-photon avalanche photodiode [PDF]

, 2012
We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 uW), dark ...
Bugge, Audun N., Ghazali, Aina M. M., Makarov, Vadim, Sauge, Sebastien   +3 more
core   +5 more sources

Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

IEEE Journal of the Electron Devices Society, 2020
We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor with the sensing circuit. The photodiode is simulated at the physics level by means of the so-called Generalized Devices, without any predefined compact model ...
Chiara Rossi, Jean-Michel Sallese
doaj   +1 more source

A liquid-helium cooled large-area silicon PIN photodiode x-ray detector [PDF]

, 1995
An x-ray detector using a liquid-helium cooled large-area silicon PIN photodiode has been developed along with a tailor-made charge sensitive preamplifier whose first-stage JFET has been cooled.
Fumio Shimokoshi, Hideyuki Hara, Makoto Minowa, Peccei, Peccei, Radeka, Shigetaka Moriyama, Sikivie, Sikivie, Van Bibber, Weinberg, Weinheimer, Wilczek, Yoshizumi Inoue   +13 more
core   +2 more sources

Active Stabilization of the Beam Pointing of a High- Power KrF Laser System

Metrology and Measurement Systems, 2015
An active beam-pointing stabilization system has been developed for a high-power KrF laser system to eliminate the long-term drift of the directional change of the beam in order to have a stable focusing to a high intensity.
Barna1 A., Földes I. B., Bohus J., Szatmári S.   +3 more
doaj   +1 more source

Highly Sensitive UV Photodiode Composed of β-Polyfluorene/YZnO Nanorod Organic-Inorganic Hybrid Heterostructure

Nanomaterials, 2020
The highly sensitive ultra-violet (UV) photodiode was demonstrated on the organic-inorganic hybrid heterostructure of β-phase p-type polyfluorene (PFO)/n-type yttrium-doped zinc oxide nanorods (YZO-NRs).
Youngmin Lee, Soo Youn Kim, Deuk Young Kim, Sejoon Lee   +3 more
doaj   +1 more source

High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020
The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm.
Mykola Kukurudziak, Olga Andreeva, Volodymyr Lipka   +2 more
doaj   +1 more source

AlGaAsSb Avalanche Photodiodes

2018 IEEE Photonics Conference (IPC), 2018
Avalanche photodiodes are widely used in optical receivers for high-speed communication systems. We have been studying the material AlGaAsSb (lattice-matched to InP substrates) experimentally in recent years, evaluating its potential as an alternative avalanche material for these avalanche photodiodes. Our experimental studies cover key characteristics
Ng, J.S., Tan, C.H.
openaire   +2 more sources

Development of the mathematical model of light flux intensity sensor based on the photodiode and operational amplifier

Қарағанды университетінің хабаршысы. Физика сериясы, 2020
The article describes a method for interpolating the dependence of the photodiode relative spectral sensitivity on the optical radiation wavelength using a special function that provides interpolation of the experimental dependence with any asymmetry ...
В. Кучерук, П. Кулаков, И. Москвичова, Г. Гаджула, П. Кисабекова, A. Кулакова, Д. Карабекова, А. Хасенов   +7 more
doaj   +1 more source

Underwater Optical Wireless Communications With InGaN LEDs Grown With an Asymmetric Multiple Quantum Well for Light Emission or Detection

IEEE Photonics Journal, 2022
InGaN light-emitting diodes (LEDs) grown with an asymmetric multiple quantum well (MQW) are proposed for use in an optical link with an avalanche photodiode (APD) based receiver.
Chia-Lung Tsai, Tong-Wen Wang, Ying-Chang Li, Atanu Das, Chia-Wei Chen, Yen-Jen Chen, Sun-Chien Ko   +6 more
doaj   +1 more source