Results 21 to 30 of about 151,013 (284)

Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

open access: yesIEEE Journal of the Electron Devices Society, 2020
We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor with the sensing circuit. The photodiode is simulated at the physics level by means of the so-called Generalized Devices, without any predefined compact model ...
Chiara Rossi, Jean-Michel Sallese
doaj   +1 more source

Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology [PDF]

open access: yes, 2003
The influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed.
Annema, Anne Johan   +2 more
core   +3 more sources

Active Stabilization of the Beam Pointing of a High- Power KrF Laser System

open access: yesMetrology and Measurement Systems, 2015
An active beam-pointing stabilization system has been developed for a high-power KrF laser system to eliminate the long-term drift of the directional change of the beam in order to have a stable focusing to a high intensity.
Barna1 A.   +3 more
doaj   +1 more source

Highly Sensitive UV Photodiode Composed of β-Polyfluorene/YZnO Nanorod Organic-Inorganic Hybrid Heterostructure

open access: yesNanomaterials, 2020
The highly sensitive ultra-violet (UV) photodiode was demonstrated on the organic-inorganic hybrid heterostructure of β-phase p-type polyfluorene (PFO)/n-type yttrium-doped zinc oxide nanorods (YZO-NRs).
Youngmin Lee   +3 more
doaj   +1 more source

High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2020
The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm.
Mykola Kukurudziak   +2 more
doaj   +1 more source

AlGaAsSb Avalanche Photodiodes

open access: yes2018 IEEE Photonics Conference (IPC), 2018
Avalanche photodiodes are widely used in optical receivers for high-speed communication systems. We have been studying the material AlGaAsSb (lattice-matched to InP substrates) experimentally in recent years, evaluating its potential as an alternative avalanche material for these avalanche photodiodes. Our experimental studies cover key characteristics
Ng, J.S., Tan, C.H.
openaire   +2 more sources

Development of the mathematical model of light flux intensity sensor based on the photodiode and operational amplifier

open access: yesҚарағанды университетінің хабаршысы. Физика сериясы, 2020
The article describes a method for interpolating the dependence of the photodiode relative spectral sensitivity on the optical radiation wavelength using a special function that provides interpolation of the experimental dependence with any asymmetry ...
В. Кучерук   +7 more
doaj   +1 more source

A 3 Gb/s optical detector in standard CMOS for 850 nm optical communication [PDF]

open access: yes, 2005
This paper presents a monolithic optical detector, consisting of an integrated photodiode and a preamplifier in a standard 0.18-/spl mu/m CMOS technology. A data rate of 3 Gb/s at BER
Annema, Anne-Johan   +2 more
core   +3 more sources

InAsSb Photodiode Fibre Optic Thermometry for High-Speed, near-Ambient Temperature Measurements

open access: yesSensors, 2023
Infrared radiation thermometers (IRTs) overcome many of the limitations of thermocouples, particularly responsiveness and calibration drift. The main challenge with radiation thermometry is the fast and reliable measurement of temperatures close to room ...
Emilios Leonidas   +6 more
doaj   +1 more source

Analysis and Optimization of Noise Response for Low-Noise CMOS Image Sensors [PDF]

open access: yes, 2012
CMOS image sensors are nowadays widely used in imaging applications and particularly in low light flux applications. This is really possible thanks to a reduction of noise obtained, among others, by the use of pinned photodiode associated with a ...
Cervantes, Paola   +3 more
core   +1 more source

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