Results 131 to 140 of about 86,621 (303)

Etching resistance and particle suppression behavior of Y₂O₃–ZrO₂ composite coatings in fluorine-based plasma

Applied Surface Science Advances
Yttrium oxide (Y₂O₃) coatings serve as essential barrier layers for protecting chamber surfaces from plasma-induced erosion and contamination during dry etching in semiconductor and display fabrication.
Gyutae Park, Hyunho Yang, Minjin Lee, Kiin Choi, Hyun S. Kum   +4 more
doaj   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Near-Plasma Chemical Surface Engineering

Nanomaterials
As a new trend in plasma surface engineering, plasma conditions that allow more-defined chemical reactions at the surface are being increasingly investigated.
Paula Navascués, Urs Schütz, Barbara Hanselmann, Dirk Hegemann   +3 more
doaj   +1 more source

A Colloidal Quantum Dot Thermistor and Bolometer

Advanced Materials, EarlyView.
This work introduces colloidal quantum dot thermistors employing a potential barrier structure to tune the activation energy of transport and hence the temperature coefficient of resistance (TCR). Upon integration with plasmonic absorbers, the CQD‐based bolometer device enables room‐temperature wavelength‐selective photodetection across the mid‐ to ...
Gaurav Kumar, Mariona Dalmases, Nima Taghipour, Rajesh Bera, Guy L. Whitworth, Goretti Torres Perez, Miguel Dosil, Gerasimos Konstantatos   +7 more
wiley   +1 more source

Self‐Powered Flexible Triboelectric‐Gated Ion‐Gel Transistor for Neuromorphic Tactile Sensing and Human Activity Recognition

Advanced Materials, EarlyView.
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho, Seoyeon Park, Youngmin Lee, Sejoon Lee   +3 more
wiley   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source

Increased Endurance of Nonvolatile Photonics Enabled by Nanostructured Phase‐Change Materials

Advanced Materials, EarlyView.
Tapered and segmented islands of the phase‐change material (PCM) antimony selenide (Sb2Se3) integrated on silicon microring resonators enable ultra‐low‐loss, high‐endurance, non‐volatile photonic tuning. The nanostructured PCM design suppresses interfacial scattering and thermal stress, achieving record endurance over 100 million electrical switching ...
Jayita Dutta, Andrew Tang, Brian Mills, Rui Chen, Arnab Manna, Gokul Nath SJ, Virat Tara, Dennis Callahan, Cosmin Constantin Popescu, Juejun Hu, Arka Majumdar   +10 more
wiley   +1 more source

Fabrication of HfO₂ patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

Nanoscale Research Letters, 2011
Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described.
Molina-Aldareguia Jon, Monaghan Scott, Hurley Paul, Cherkaoui Karim, Benedicto Marcos, Galiana Beatriz, Vazquez Luis, Tejedor Paloma   +7 more
doaj  

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

Advanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger, Maximilian M. Horn, Eva Röck, Diego Rosas Villalva, Lize Bynens, Jochen Vanderspikken, Christina Kousseff, Silène Gobeil, Olivier Bardagot, Nesibe Akmanşen‐Kalayci, Sarah H. Tolbert, Iain McCulloch, Wouter Maes, Demetra Tsokkou, Natalie Banerji   +14 more
wiley   +1 more source