Results 131 to 140 of about 6,644,773 (301)

Near-Plasma Chemical Surface Engineering

Nanomaterials
As a new trend in plasma surface engineering, plasma conditions that allow more-defined chemical reactions at the surface are being increasingly investigated.
Paula Navascués, Urs Schütz, Barbara Hanselmann, Dirk Hegemann   +3 more
doaj   +1 more source

Plasmon‐Enhanced Second‐Harmonic Generation in Atomically Thin Crystalline Silver Nanostructures

Advanced Materials, EarlyView.
Atomically thin crystalline silver films combine vertical quantum confinement with lateral plasmonic field enhancement to boost second‐harmonic generation. Nanoribbon and nanotriangle arrays enable geometry‐tunable infrared plasmon resonances, producing strong SHG from deeply subwavelength metallic volumes compatible with silicon‐based nanophotonics ...
Saad Abdullah, Philipp K. Jenke, Andrew P. Weber, Álvaro Rodríguez Echarri, Vahagn Mkhitaryan, Fadil Iyikanat, Frederik Schiller, Philip Walther, J. Enrique Ortega, Lee A. Rozema, F. Javier García de Abajo   +10 more
wiley   +1 more source

Reactivity‐Guided Janus Graphene With Asymmetric Interfacial Electrostatics for Tunable Charge Transport

Advanced Materials, EarlyView.
Stepwise dual‐side functionalization creates covalent Janus graphene with chemically and electrostatically asymmetric interfaces. The resulting nonadditive surface‐potential response and pronounced charge‐transport modulation demonstrate a versatile route for tailoring the electronic properties of graphene.
Shishi Liu, Zhuting Hao, Mira Kreßler, Oguzhan Yücel, Lotte Polling, Adrián Dewambrechies, Wesley Pietsch, Philip Nickl, Felix Fels, Kevin Pagel, Markus R. Heinrich, Patryk Kusch, Kirill Bolotin, Xin Chen, Siegfried Eigler   +14 more
wiley   +1 more source

Inductively Coupled Plasma Etching of III-V Antimonides in BCl(3)/Ar and Cl(2)/Ar

, 2009
Inductively coupled plasma (ICP) etching characteristics of GaSb and AIGaAsSb have been investigated in BC13/Ar and Clz/Ar plasmas. The etch rates and selectivity between GaSb and AIGaAsSb are reported as functions of plasma chemistry, ICP power, RF self-
Leavitt, R.P.; Lester, L.F.; Shul, R.J.; Willison, C.G.; Zhang, L.
core  

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Multiscale modeling of chemical vapor deposition and plasma etching [PDF]

, 2000
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000.Includes bibliographical references.In this work, a framework and a set of modeling tools capable of describing systems with key processes occurring on widely ...
Rodgers, Seth Thomas, 1970-
core  

Where Precursor Loading Stops Making a Difference: Resolving an Operational Infiltration Limit for Nanoparticle Synthesis Using Dual Quantification of Reverse Micelle Nanoreactors

Advanced Materials Interfaces, EarlyView.
A dual characterization strategy combining nanomechanical and mass measurements resolves a common operational loading threshold in reverse micelle nanoreactors. This transferable framework provides a rational strategy for optimizing precursor loading and nanoparticle synthesis, across template‐mediated fabrication systems.
Linan Cui, Pedro Q. Oliveira, Kyla N. Sask, Ayse Z. Turak   +3 more
wiley   +1 more source

Slanted plasma etching and advanced cyclic etching

, 2015
학위논문(박사)--아주대학교 일반대학원 :에너지시스템학과,2015. 8Chapter 1. Introduction 1 1.1 Plasma etching for the fabrication of Si and SiO2 structures 1 1.2 Control over etch profiles 5 1.3 Objectives 10 Chapter 2.
조성운
core  

The Etching Behaviour and Fluorine-Based-Plasma Resistance of YOF Coatings Deposited by Atmospheric Plasma Spraying

There is a high demand for plasma-resistant coatings that prevent the corrosion of the internal ceramic components of plasma etching equipment, thereby reducing particle contamination and process drift.
Kaiqu Ang, Linjun Wang, Hua Meng, Yuxuan Wei, Hongli Chen, Ying Shi, Zaifeng Tang, Yuwei Wang, Jin Xu   +8 more
core   +1 more source

Fabrication of HfO₂ patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

Nanoscale Research Letters, 2011
Nanostructuring of ultrathin HfO2 films deposited on GaAs (001) substrates by high-resolution Lloyd's mirror laser interference nanolithography is described.
Molina-Aldareguia Jon, Monaghan Scott, Hurley Paul, Cherkaoui Karim, Benedicto Marcos, Galiana Beatriz, Vazquez Luis, Tejedor Paloma   +7 more
doaj