Results 111 to 120 of about 6,644,773 (301)

Development of decoration and preferential-etching methods for delineation of crystal defects in semiconductor materials [PDF]

, 2013
Silicon wafers such as Silicon on Insulator (SOI) and strained silicon on Insulator (sSOI) are the essential and basic materials of advanced microelectronic devices.
Idrisi, Hanan
core  

Towards atomic-scale smooth surface manufacturing of β-Ga2O3 via highly efficient atmospheric plasma etching

International Journal of Extreme Manufacturing
The highly efficient manufacturing of atomic-scale smooth β -Ga _2 O _3 surface is fairly challenging because β -Ga _2 O _3 is a typical difficult-to-machine material.
Yongjie Zhang, Yuxi Xiao, Jianwen Liang, Chun Zhang, Hui Deng   +4 more
doaj   +1 more source

Sub‐Nanometer Cobalt on Tungsten Titanium Carbide MXene (W2TiC2Tx): An Electrocatalyst for Highly Efficient and Stable Alkaline Hydrogen Evolution at Industrial‐Scale Current Density

Advanced Materials, EarlyView.
A novel W2TiC2Tx MXene prepared through a MAX‐phase route supports sub‐nanometer Co for highly efficient alkaline hydrogen evolution. Strong Co–W interfacial interactions optimize hydrogen adsorption and catalytic activity, enabling low overpotentials of 63 mV at 10 mA cm−2, small Tafel slope of 44.3 mV dec−1, and exceptional durability at industrially
Xiaopeng Liu, Fan Yang, Deep M. Patel, Mohammad Albloushi, Qiqi Mao, Shan Jiang, Christian J. Breckner, Connor W. Schroeder, Ruoyu Cui, Tao Ma, Dapeng Jing, Wenyu Huang, Jeffrey T. Miller, Wenzhen Li, Luke T. Roling, Yue Wu   +15 more
wiley   +1 more source

Plasma Etching Behavior of YOF Coating Deposited by Suspension Plasma Spraying in Inductively Coupled CHF3/Ar Plasma

, 2020
Dense yttrium oxyfluoride (YOF) coating was successfully deposited by suspension plasma spraying (SPS) with coaxial feeding. After deposition for 6 min at a plasma power of 105 kW, the thickness of the YOF coating was 55 ± 3.2 µm with a ...
Nong-Moon Hwang, Woongsik Kim, Jaehoo Lee, Seungjun Lee   +3 more
core   +1 more source

Remote plasma enhanced cyclic etching of a cyclosiloxane polymer thin film

International Journal of Extreme Manufacturing
The continuous evolution of chip manufacturing demands the development of materials with ultra-low dielectric constants. With advantageous dielectric and mechanical properties, initiated chemical vapor deposited (iCVD) poly(1,3,5-trimethyl-1,3,5-trivinyl
Xianglin Wang, Xinyu Luo, Weiwei Du, Yuanhao Shen, Xiaocheng Huang, Zheng Yang, Junjie Zhao   +6 more
doaj   +1 more source

Defect‐Templated Phase Engineering in Atomically Thin Metals

Advanced Materials, EarlyView.
Graphene defects are transformed from passive imperfections into programmable templates for phase‐selective growth of atomically thin silver. Plasma‐generated boundary defects favor Ag(1), whereas sp3‐rich zero‐layer graphene promotes Ag(2). This defect‐directed intercalation links local graphene chemistry to crystalline phase, electronic structure ...
Arpit Jain, Boyang Zheng, Sawani Datta, Kanchan Ulman, Jakob Henz, Matthew Wei‐Jun Liu, Van Dong Pham, Wen He, Chengye Dong, Li‐Syuan Lu, Alexander Vera, Nader Sawtarie, Wesley Auker, Ke Wang, Bob Hengstebeck, Zachary W. Henshaw, Shreya Mathela, Maxwell Wetherington, William H. Blades, Kenneth Knappenberger, Ursula Wurstbauer, Su Ying Quek, Ulrich Starke, Shengxi Huang, Vincent H. Crespi, Joshua A. Robinson   +25 more
wiley   +1 more source

Plasma Etching of Aluminum Nitride and Molybdenum in Multidimensional MEMS Structures

Advanced Materials Interfaces
The transition to 3D device architectures is a rapidly advancing trend in microelectronics. As a result, several manufacturing technologies have has to rapidly evolve to meet the challenge of more complex structures, whilst maintaining the high precision
Tarmo Nieminen, Glenn Ross, Mervi Paulasto‐Kröckel   +2 more
doaj   +1 more source

Deterministic Field‐Free Switching of Perpendicular Magnetization by Bulk Mirror Symmetry Broken Bi1−xSbx (012) with High Spin Hall Conductivity

Advanced Materials, EarlyView.
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho, Youngmin Lee, Jaeseok Huh, Jaehan Park, Hyeong‐Jun Son, Dowoo Pyeon, Mann‐Ho Cho   +6 more
wiley   +1 more source

Contamination Particles and Plasma Etching Behavior of Atmospheric Plasma Sprayed Y2O3 and YF3 Coatings under NF3 Plasma

, 2019
Yttrium oxide (Y2O3) and yttrium oxyfluoride (YO0.6F2.1) protective coatings were prepared by an atmospheric plasma spraying technique. The coatings were exposed to a NF3 plasma.
Jin-Tae Kim, Seong-Geun Oh, Ju-Young Yun, Je-Boem Song   +3 more
core   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

Advanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh, Min Gu Lee, Hwayoung Kim, Myeongchan Ko, Jungwan Noh, Taewook Go, Jingyao Yu, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +9 more
wiley   +1 more source