Results 91 to 100 of about 6,644,773 (301)

Atomic-layer soft plasma etching of MoS2 [PDF]

open access: yes, 2016
Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the
Ostrikov, Kostya   +9 more
core   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

open access: yesAdvanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu   +14 more
wiley   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

open access: yesAdvanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis   +19 more
wiley   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

open access: yesAdvanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger   +14 more
wiley   +1 more source

Optimization of inductively coupled plasma dry etching for planar waveguide fabrication / Lim Weng Hong [PDF]

open access: yes, 2010
Optimization of the Inductively Coupled Plasma (ICP) dry etching process parameters has been carried out. Seven main etching characteristics were considered in order to produce good etching quality.
Lim, Weng Hong
core  

Effects of Micromachining Processes on Electro-Osmotic Flow Mobility of Glass Surfaces

open access: yesMicromachines, 2013
Silica glass is frequently used as a device material for micro/nano fluidic devices due to its excellent properties, such as transparency and chemical resistance.
Norihisa Miki   +4 more
doaj   +1 more source

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

open access: yesAdvanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair   +3 more
wiley   +1 more source

Atmospheric pressure plasmas for surface modification [PDF]

open access: yes, 2001
Many methods are currently used for the production of silicon oxide films, most have drawbacks associated with high temperatures and the requirement for a vacuum. Atmospheric pressure plasma treatment can address some of these difficulties.
Ward, Luke John
core  

High-rate anisotropic silicon etching with the expanding thermal plasma technique [PDF]

open access: yes, 2006
Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated. The ETP technique makes use of a remote high-d.
Sanden, MCM Richard van de   +9 more
core   +2 more sources

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

open access: yesAdvanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova   +10 more
wiley   +1 more source

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