Results 1 to 10 of about 22,855 (262)

Analysis of chemical processes of plasma etching

Thin Solid Films, 1981
Abstract The emission spectrum of the plasma during the etching of silicon and SiO 2 layers was examined. Emission lines of fluorine (at 704 nm) and of CO (at 483.5 nm) were detected. The application of the latter line to the detection of the end point of etching is presented and the mechanism of etchant production is described in terms of the ...
G. Vályi, V. Schiller, J. Gyimesi, J. Gyulai   +3 more
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Study of plasma - surface interactions: chemical dry etching and high-density plasma etching

Plasma Sources Science and Technology, 1996
We report results of the characterization of the plasma - surface interactions of silicon and silicon dioxide in fluorocarbon discharges using real-time ellipsometry and post-plasma multi-technique surface analysis for chemical dry etching (CDE) and high-density plasma etching (HDPE).
G S Oehrlein, P J Matsuo, M F Doemling, N R Rueger, B E E Kastenmeier, M Schaepkens, Th Standaert, J J Beulens   +7 more
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Physical and chemical etching in plasmas

Thin Solid Films, 1981
Abstract The need to produce patterns by plasma techniques is explained and various etching phenomena are described. A brief chronological review is given of physical plasma techniques, including sputter and ion etching, and their application to the manufacture of electronic components.
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Numerical simulation of plasma-chemical etching reactors

1997 21st International Conference on Microelectronics. Proceedings, 2002
The effect of nonisothermality of the operating continuum on the etching rate and uniformity in a planar plasma-chemical reactor was analyzed. The temperature of an electrode with a wafer was assumed specified and varied in a range which is characteristic for such reactors. Convection, molecular conduction and radiation were taken into account.
Yu.N. Grigoryev, A.G. Gorobchuk
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Improvement of resist mask plasma etching durability by plasma chemical polymerization

Microelectronic Engineering, 1992
Abstract A new method for improving resist plasma etching durability by means of plasma chemical modification has been developed. It was shown that organic films formed in radio frequency discharge in the mixture of argon and methylmethacrylate(MMA) while submitted to r.f. plasma in conditions usually used for etching in RIE mode were found to have 8–
V.F. Limanova, D.B. Askerov, A.V. Kovalchuk, V.N. Vasilets   +3 more
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Theory of plasma chemical transport etching of gold in a chlorine plasma

Thin Solid Films, 1981
Abstract The behavior of the reactive ion etching of gold in a chlorine plasma reported earlier is shown in this paper to be interpretable in terms of a theory of chemical vapor transport, modified to account for the effect of species generated in the plasma and transported across the plasma sheaths to the reacting surfaces. The interpretation of the
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Quantum-chemical approach to the elementary steps of plasma etching

Chemical Physics Letters, 1983
Abstract We derive for the first time a mechanism of reactive plasma etching in the system Si/F by the quantum-chemical approach. SiF 2 -like species at the surface play an important role. SiF 3 surface complexes also occur. The final etching product SiF 4 is formed with high probability in the gas phase.
Dieter K. Fricke, Hans Müller, Ch. Opitz   +2 more
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Etching characteristics of GaN by plasma chemical vaporization machining

Surface and Interface Analysis, 2008
Abstract A high‐quality bulk gallium nitride (GaN) substrate, which is suitable for high‐quality homoepitaxial growth, is indispensable for realizing high‐performance GaN devices. With improvement in the quality of the bulk GaN substrate, the removal of subsurface damage induced during surface polishing has become
Yasuji Nakahama, Norio Kanetsuki, Takeshi Funaki, Masaru Kadono, Yasuhisa Sano, Kazuya Yamamura, Katsuyoshi Endo, Yuzo Mori   +7 more
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Production of surface patterns by chemical and plasma etching

Journal of Physics E: Scientific Instruments, 1981
The methods of protecting and etching surface areas to obtain lateral pattern dimensions of 50 mu m are reviewed. Protection materials, resists, which can be selectively dissolved, i.e. developed, after exposure to UV, electron beam, X-ray or ionic radiation are considered.
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Spectral investigation of the plasma-chemical etching of silicon dioxide

Journal of Applied Spectroscopy, 1979
Practical investigations in the past few years have shown the promising nature of the use of the plasma-chemical method of etching silicon dioxide films during the production of integrated circuits. Nevertheless, with rare exceptions [1-3], the available studies were carried out without calling upon modern diagnostic methods for studying the plasma ...
M. N. Bosyakov, N. N. Nikiforenko, A. A. Labuda   +2 more
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