Results 21 to 30 of about 22,855 (262)

Studying the efficacy of hydrogen plasma treatment for enabling the etching of thermally annealed ruthenium in chemical solutions

open access: yesMicro and Nano Engineering, 2023
Ruthenium (Ru) is a noble metal and is known to be resistant to many common chemicals and mixtures. We report in this study a controlled etching/recessing of Ru via wet processing and a combination of dry and wet process using metal-free chemical ...
Q.T. Le   +9 more
doaj   +1 more source

A Facile, Low-Cost Plasma Etching Method for Achieving Size Controlled Non-Close-Packed Monolayer Arrays of Polystyrene Nano-Spheres

open access: yesNanomaterials, 2019
Monolayer nano-sphere arrays attract great research interest as they can be used as templates to fabricate various nano-structures. Plasma etching, and in particular high-frequency plasma etching, is the most commonly used method to obtain non-close ...
Yun Chen   +6 more
doaj   +1 more source

Evolution of surface morphology and properties of diamond films by hydrogen plasma etching

open access: yesGreen Processing and Synthesis, 2023
The micron-scale diamond film was prepared using hydrogen and methane as the mixed gas supplies via self-developed 3 kW/2,450 MHz microwave plasma chemical vapor deposition (MPCVD) equipment.
Chu Genjie   +5 more
doaj   +1 more source

Estimation of the Optimum Etching Time and Etching Parameters for CR-39 Nuclear Tracks Detector by Applying Plasma and Chemical Etching Techniques

open access: yesAl-Mustansiriyah Journal of Science
Background: CR-39 nuclear track detectors are widely used in various fields, including science, technology, astronomy, and environmental preservation, to detect and register heavy ions, neutrons, and alpha particles.
Abdulkader Makki Dahham   +3 more
doaj   +1 more source

High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma

open access: yesMaterials Research Express, 2020
We investigated the etching characteristics of aluminum-doped zinc oxide (AZO) thin films in an adaptively coupled plasma (ACP) system. The dry etching characteristics of AZO films were studied by changing the Cl _2 /Ar gas mixing ratio, RF power, DC ...
Liting Zhang   +3 more
doaj   +1 more source

Peculiarity of plasmachemical etching of silicon plate edges of photoelectric converters [PDF]

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009
Results of technological researches of plasmachemical reactor (PCR) for etching of silicon plate edges of photo-electric converters are described. Dependences of silicon etching speed on a discharge current, magnetic field intensity, quantity of the ...
Fedorovich O. A.   +2 more
doaj   +2 more sources

Evolution of defect formation during atomically precise desulfurization of monolayer MoS2

open access: yesCommunications Materials, 2021
Desulfurization of MoS2 alters its chemical and physical properties by breaking structural symmetry. Here, the atomic-scale mechanistic pathway by which this occurs is investigated during plasma etching, and changes in chemical structure and physical ...
Jong-Young Lee   +9 more
doaj   +1 more source

Reactive Ion Etching of X-Cut LiNbO3 in an ICP/TCP System for the Fabrication of an Optical Ridge Waveguide

open access: yesApplied Sciences, 2023
In this study, the technology for producing ridge waveguides with a minimal roughness of the sidewalls and material surface in a near-waveguide region was developed with the purpose of fabricating miniature photonic integrated circuits on a LiNbO3 ...
Andrei Kozlov   +6 more
doaj   +1 more source

Anisotropic and low damage III-V/Ge heterostructure etching for multijunction solar cell fabrication with passivated sidewalls

open access: yesMicro and Nano Engineering, 2021
This article presents a complete plasma etching process to etch high aspect ratio patterns on III-V/Ge solar cell heterostructure with low damage for the fabrication of multijunction solar cells with a through cell via contact architecture.
Mathieu de Lafontaine   +11 more
doaj   +1 more source

Analytical model of plasma-chemical etching in planar reactor [PDF]

open access: yesJournal of Physics: Conference Series, 2016
The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy.
D S Veselov   +4 more
openaire   +1 more source

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