Results 41 to 50 of about 22,855 (262)

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

Proceedings, 2017
Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ...
Tony Granz, Shinta Mariana, Gerry Hamdana, Feng Yu, Muhammad Fahlesa Fatahilah, Irene Manglano Clavero, Prabowo Puranto, Zhi Li, Uwe Brand, Joan Daniel Prades, Erwin Peiner, Andreas Waag, Hutomo Suryo Wasisto   +12 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Resistance abilities of （100）/（111）-faceted diamond films against oxygen plasma etching

Journal of Aeronautical Materials, 2019
The resistance abilities of (100) and (111)-faceted diamond films against oxygen plasma, 100 μm as film thickness, were investigated by the microwave power chemical vapor deposition (MPCVD) technique.
SUN Qi, WANG Jianhua, CHENG Chong, CHEN Xianglei, WU Rongjun, LIU Dan, ZHU Jiao   +6 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Plasma-chemical etching of gallium nitride epitaxial structures

Технологія та конструювання в електронній апаратурі, 2005
The results of plasma-chemical etching of gallium nitride epitaxial structures on sapphire substrates are presented. Etching was carried out in a plasma-chemical reactor with closed electron drift.
A. G. Borisenko, B. P. Polozov, O. A. Fedorovich, M. S. Boltovets, V. N. Ivanov, Yu. N. Sveschnikov   +5 more
doaj  

Irradiation‐Induced Spin Bath Evolution and as‐Grown Hydrogen Defects in CVD Diamond Revealed by NV‐Based DEER Spectroscopy

Advanced Functional Materials, EarlyView.
Here, we provide the reader with the current state of the art in the fabrication of high‐T2‐coherence diamond, optimized through the use of double electron–electron resonance (DEER) spectroscopy. We reveal the main as well as yet unidentified spin defects, the reduction of which is essential for reducing the spin bath and fabricating materials for ...
Olga Rubinas, Jeroen Prooth, Michael Petrov, Remy Vandebosch, Emilie Bourgeois, David Chvátil, Milos Nesladek   +6 more
wiley   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

The influence of surface modification processes on the airtightness of copper sheet inserts

AIP Advances
This study addresses the demand for improving the airtightness of copper sheet inserts in new energy vehicles by conducting surface treatments on copper sheets before injection molding.
Yiming Wen, Fei Hai, Bin Xia, Mengfu Zhao, Zhitong Zhang, Lu Yu, Hao Dai, Yanzhao Qiu, Ghulam Hussain, Borhen Louhichi, Hongyan Wu   +10 more
doaj   +1 more source

Long-term oxygen plasma etching of UDMA:TEGDMA methacrylate resin: Etching rate and physical property changes

Polymer Testing
The effect of low-pressure oxygen plasma etching on the physical properties of a dental photopolymer, namely UDMA:TEGDMA in 3:1 wt ratio, was investigated.
Alexandra Borók, Melinda Szalóki, Dávid Gál, Miklós Veres, Attila Bonyár   +4 more
doaj   +1 more source