Results 71 to 80 of about 86,621 (303)

Adhesion of endothelial cells and adsorption of serum proteins on gas plasma-treated polytetrafluoroethylene [PDF]

, 1991
From in vitro experiments it is known that human endothelial cells show poor adhesion to hydrophobic polymers. The hydrophobicity of vascular prostheses manufactured from Teflon® or Dacron® may be the reason why endothelialization of these grafts does ...
Aken, W.G. van, Bantjes, A., Beugeling, T., Dekker, A., Feijen, J., Reitsma, K.   +5 more
core   +2 more sources

Atomic‐Scale Light Coupling Control in Ultrathin Photonic Membranes

Advanced Functional Materials, EarlyView.
Ultrathin photonic nanomembranes provide atomic‐scale control over the coupling between incident light and high‐Q photonic modes, enabling angstrom‐level resonance tuning and strong field confinement. When integrated with TMD monolayers, they further yield enhanced light–matter interactions, offering a versatile platform for advancing quantum photonics,
Chih‐Zong Deng, Chun‐Hao Chiang, Sunhao Shi, Jui‐Han Fu, Yen‐Ju Wu, Kuniaki Konishi, Vincent Tung, Chun‐Wei Chen, Ya‐Lun Ho   +8 more
wiley   +1 more source

Plasma and Gas‐based Semiconductor Technologies for 2D Materials with Computational Simulation & Electronic Applications

Advanced Electronic Materials
The technique of plasma processing is beneficial for wafer cleaning and precision etching of integrated circuits and essential in manufacture of advanced semiconductor devices with unmatched perfection. Research on two‐dimensional (2D) materials, such as
Changmin Kim, Muyoung Kim, Seongho Kim, Minji Kang, Min Sup Choi, Hyeong‐U Kim   +5 more
doaj   +1 more source

Combined D-optimal design and generalized regression neural network for modeling of plasma etching rate

International Journal of Metrology and Quality Engineering, 2014
Plasma etching process plays a critical role in semiconductor manufacturing. Because physical and chemical mechanisms involved in plasma etching are extremely complicated, models supporting process control are difficult to construct ...
You Hailong, Chen Yong, Liu Peng, Jia Xinzhang   +3 more
doaj   +1 more source

Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers [PDF]

, 2010
A homoepitaxial boron-doped diamond single layer is investigated by means of Fourier transformed infrared spectroscopy (FTIR) and cathodoluminescence (CL). Both techniques are shown to be complementary.
Araujo, Araujo, Araújo, Barjon, Baron, Bernard, Bernard, Bonard, C. Fernández-Lorenzo, Chevallier, Collins, D. Araújo, E. Bustarret, F. Omnès, Goss, J. Martín, J. Navas, Kasu, Kawarada, M.P. Alegre, M.P. Villar, Muret, P.N. Volpe, R. Alcántara, Teukam, Thonke   +25 more
core   +4 more sources

Through Diamond Robust Surface Enhanced Raman Spectroscopy

Advanced Functional Materials, EarlyView.
Thin film diamond growth offers a unique opportunity for Surface Enhanced Raman Spectroscopy (SERS); the encapsulation of plasmonic nanostructures within a transparent, chemically stable, and physically robust coating. The diamond acts as both a window and protective layer, enabling illumination of the plasmonic nanostructures through the diamond ...
Kieran N. Twaddle, Rebecca J. Watkins, Ralph J. Moors, Massimiliano L.A. Ramsay, Richard B. Jackman   +4 more
wiley   +1 more source

Influence of plasma-chemical etching on the surface structure of silicon wafers for photovoltaic converters

Технологія та конструювання в електронній апаратурі, 2006
The results of plasma-chemical etching (PCE) of the surface of photovoltaic converter (PVC) wafers, pre-structured by chemical etching, are presented. PCE was carried out in a plasma-chemical reactor using a mixture of sulfur hexafluoride (SF₆) and 10 ...
B. P. Polozov, O. A. Fedorovich, V. N. Golotyuk, A. A. Marinenko, D. V. Lukomsky   +4 more
doaj  

InP nanocrystals on silicon for optoelectronic applications

, 2012
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical
Helm, Manfred, Liedke, Maciej Oskar, Mücklich, Arndt, Ou, Xin, Prucnal, Slawomir, Pyszniak, Krzysztof, Reuther, Helfried, Skorupa, Wolfgang, Turek, Marcin, Zhou, Shengqiang, Zuk, Jerzy   +10 more
core   +1 more source

Fabrication and deterministic transfer of high quality quantum emitter in hexagonal boron nitride [PDF]

, 2018
Color centers in solid state crystals have become a frequently used system for single photon generation, advancing the development of integrated photonic devices for quantum optics and quantum communication applications.
Buchler, Ben C., Campbell, Geoff, Lam, Ping Koy, Lu, Yuerui, Vogl, Tobias   +4 more
core   +3 more sources

Quasi‐Static to Supersonic Energy Absorption of Nanoarchitected Tubulanes and Schwarzites

Advanced Functional Materials, EarlyView.
Nanoarchitected energy‐absorptive Tubulanes exhibit record energy absorption under quasi‐static conditions and exceptional inelastic energy dissipation under 750 m s−1 ballistics impact, with high performance spanning strain rates of 12 orders of magnitude.
Peter Serles, Alianna Maguire, Thomas Butruille, Jet Lem, Shuo Yang, Pedro Guerra Demingos, Sahar Choukir, Michel Haché, Boran Kumral, Katherine Jia, Charles Jia, Yu Zou, Chandra Veer Singh, Carlos M. Portela, Jun Lou, Pulickel M. Ajayan, Tobin Filleter   +16 more
wiley   +1 more source