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WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition

Applied Physics Letters
We report the demonstration of p-channel WS2 metal oxide field effect transistors (MOSFETs) using channels deposited by plasma-enhanced atomic layer deposition (PE-ALD). Substrate-gated devices using PE-ALD WS2 films deposited at 300 °C were fabricated with source-to-drain spacing, LDS, ranging from 0.1 to 1.1 µm. Despite being undoped, both 3.4-nm and
Ruixue Li   +5 more
openaire   +1 more source

Plasma enhanced atomic layer deposition of Ga

Journal of Materials Chemistry A, 2014
Ranjith K. Ramachandran   +7 more
openaire   +1 more source

Engineering the Atomic Interface with Single Platinum Atoms for Enhanced Photocatalytic Hydrogen Production

Angewandte Chemie - International Edition, 2020
Yuanjun Chen, Wenming Sun, Yong-Peng Lei
exaly  

Enhanced activation of molecular oxygen and degradation of tetracycline over Cu-S4 atomic clusters

Applied Catalysis B: Environmental, 2020
Shoutian Sun, Haodong Ji, Wen Liu
exaly  

Atomic interface effect of a single atom copper catalyst for enhanced oxygen reduction reactions

Energy and Environmental Science, 2019
Wenming Sun, Huishan Shang, Wenxing Chen
exaly  

Atomic Vacancies Control of Pd‐Based Catalysts for Enhanced Electrochemical Performance

Advanced Materials, 2018
Yunpeng Zuo, Dewei Rao, Tingting Li
exaly  

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