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WS2 p-MOSFETs with channels deposited by plasma-enhanced atomic-layer deposition
Applied Physics LettersWe report the demonstration of p-channel WS2 metal oxide field effect transistors (MOSFETs) using channels deposited by plasma-enhanced atomic layer deposition (PE-ALD). Substrate-gated devices using PE-ALD WS2 films deposited at 300 °C were fabricated with source-to-drain spacing, LDS, ranging from 0.1 to 1.1 µm. Despite being undoped, both 3.4-nm and
Ruixue Li +5 more
openaire +1 more source
Plasma enhanced atomic layer deposition of Ga
Journal of Materials Chemistry A, 2014Ranjith K. Ramachandran +7 more
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Enhanced activation of molecular oxygen and degradation of tetracycline over Cu-S4 atomic clusters
Applied Catalysis B: Environmental, 2020Shoutian Sun, Haodong Ji, Wen Liu
exaly
Atomic interface effect of a single atom copper catalyst for enhanced oxygen reduction reactions
Energy and Environmental Science, 2019Wenming Sun, Huishan Shang, Wenxing Chen
exaly
Atomic Vacancies Control of Pd‐Based Catalysts for Enhanced Electrochemical Performance
Advanced Materials, 2018Yunpeng Zuo, Dewei Rao, Tingting Li
exaly

