Results 171 to 180 of about 17,992 (248)

Extrusion Bioprinting for Wound Healing: Innovations in Functionalized Bioinks and Bioprinting Technology

open access: yesAdvanced Materials Technologies, EarlyView.
Extrusion‐based bioprinting (EBB) has emerged as a versatile biofabrication platform capable of precisely depositing bioinks composed of biomaterials, cells, and bioactive agents to generate patient‐specific, biomimetic skin constructs. This paper presents a state‐of‐the‐art and forward‐looking overview of EBB for wound healing, encompassing printing ...
Hien‐Phuong Le   +4 more
wiley   +1 more source

Artificial Synaptic Device Based on Self‐Aligned c‐In2O3 TFTs With an Ultrathin MgO Interlayer

open access: yesAdvanced Materials Technologies, EarlyView.
A coplanar synaptic thin‐film transistor based on crystalline In2O3 is demonstrated using a PECVD SiO2 gate insulator and an ultrathin MgO interlayer. The MgO interlayer suppresses excessive carrier density and may facilitate proton‐related interfacial polarization, resulting in stable counterclockwise hysteresis and synaptic behavior.
Samiran Roy, Jewel Kumer Saha, Jin Jang
wiley   +1 more source

In Situ Integrated Titanium Oxide Synaptic Phototransistor Enabling Multimodal Plasticity and Noise‐Robust Selective Attention

open access: yesAdvanced Materials Technologies, EarlyView.
An in situ integrated TiO2/SiOx/Al2O3 synaptic phototransistor couples ultraviolet and electrical stimuli within a scalable, CMOS‐compatible oxide stack. Multimodal plasticity, spike‐timing‐dependent learning, and bee‐inspired associative conditioning are achieved through trap‐mediated temporal dynamics.
Youngbin Yoon   +5 more
wiley   +1 more source

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

open access: yesAdvanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho   +6 more
wiley   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

open access: yesAdvanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob   +4 more
wiley   +1 more source

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