Results 101 to 110 of about 22,855 (262)

Programmable Functional Silicification of DNA Origami Nanostructures

Advanced Materials, EarlyView.
This work introduces additional functionality into silica‐coated DNA origami nanostructures using non‐standard silica precursors. A fluorescent precursor enables enhanced intracellular tracking, while a disulfide‐containing reagent yields redox‐responsive, degradable silica coatings.
Anna V. Baptist, Lasse Guericke, Philipp Mauker, Oliver Thorn‐Seshold, Amelie Heuer‐Jungemann   +4 more
wiley   +1 more source

Diamond etching with near-zero micromasking

Journal of Materials Research and Technology
The outstanding material properties of single-crystal diamond have been the origin of the long-standing interest in its exploitation for engineering of high-performance micro- and nanosystems. Etching and patterning diamond have proven challenging due to
Xiangbing Wang, Shuangquan Fang, Bo Wang, Mengting Qiu, Kazhihito Nishimura, Nan Jiang, Jian Yi   +6 more
doaj   +1 more source

Confinement‐Induced Donnan Potential Enables Sealed Hydrovoltaic Power From Microliter Water

Advanced Materials, EarlyView.
An ultrathin MXene/cellulose nanofiber (CNF) nanochannel‐based hydrovoltaic generator produces sustained direct current (DC) from a single microliter droplet under sealed operation. Asymmetric nanochannel confinement establishes a persistent ion gradient and a confinement‐induced Donnan potential, harvesting the interfacial free energy released upon ...
Sangyun Na, Geonyoung Jung, Yoojin Chang, Yun Goo Ro, Cheolhong Park, Jeonghee Yeom, Jinyoung Kim, Jeeyoon Kim, Hyejin Lee, Hyeji Oh, Hyunhyub Ko   +10 more
wiley   +1 more source

Etching resistance and particle suppression behavior of Y₂O₃–ZrO₂ composite coatings in fluorine-based plasma

Applied Surface Science Advances
Yttrium oxide (Y₂O₃) coatings serve as essential barrier layers for protecting chamber surfaces from plasma-induced erosion and contamination during dry etching in semiconductor and display fabrication.
Gyutae Park, Hyunho Yang, Minjin Lee, Kiin Choi, Hyun S. Kum   +4 more
doaj   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Multilayered Digital Microfluidic Chip for Cell‐Based Assays

Advanced Materials Interfaces, EarlyView.
A multilayered digital microfluidic (mDMF) chip architecture is introduced to improve throughput and robustness in cell‐based assays. By multilayering electrode components and dielectric layers on glass, this design significantly reduces actuation voltage, maintains reliability, and enables expansion of the operational area with minimum current leakage.
Mert Ozden, Oksana K. Savchak, Burcu Gumuscu   +2 more
wiley   +1 more source

Near-Plasma Chemical Surface Engineering

Nanomaterials
As a new trend in plasma surface engineering, plasma conditions that allow more-defined chemical reactions at the surface are being increasingly investigated.
Paula Navascués, Urs Schütz, Barbara Hanselmann, Dirk Hegemann   +3 more
doaj   +1 more source

Nonwoven‐Based Textile Architectures for Energy Storage Applications: Materials, Preparation, Characterization, and Prospects

Advanced Materials Interfaces, EarlyView.
Nonwoven textile architectures are emerging as versatile platforms for next‐generation energy storage, demonstrating how tailored materials and fabrication strategies enhance ion transport, conductivity, flexibility, and scalability for high‐performance sustainable devices.
Tarikul Islam, Md. Hanif Munshi, Rijon Saha, Shaikh Almoon Hussain, Aqib Adnan Shafin, Shumsul Arefin, Md. Kamruzzaman   +6 more
wiley   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

Advanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu, Tsung‐Han Tsai, Qingxiao Wang, Haicheng Cao, Jie Zhou, You Jin Koo, Chenyu Wang, Yang Liu, Yuyue Hao, Michael Eller, Connor Bailey, Stephanie Liu, Nicholas J. Tanen, Zhiyuan Liu, Mingtao Nong, Robert M. Jacobberger, Tien Khee Ng, Katherine Fountaine, Vincent Gambin, Boon S. Ooi, Xiaohang Li, Zhenqiang Ma   +21 more
wiley   +1 more source