Results 11 to 20 of about 2,786,485 (335)
Numerical and experimental studies of the carbon etching in EUV-induced plasma [PDF]
We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion ...
Astakhov, D. I. +8 more
core +14 more sources
During the oxide layer etching process, particles in capacitively coupled plasma etching equipment adhere to the wafer edge and cause defects that reduce the yield from semiconductor wafers.
Ching-Ming Ku, Stone Cheng
doaj +1 more source
Wet Chemical and Plasma Etching of Photosensitive Glass
Photosensitive glasses for radiation-induced 3D microstructuring, due to their optical transparency and thermal, mechanical, and chemical resistance, enable the use of new strategies for numerous microscale applications, ranging from optics to biomedical
Ulrike Brokmann +4 more
doaj +1 more source
A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide
The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices.
K. Racka-Szmidt +4 more
semanticscholar +1 more source
Effect of Plasma Etching Depth on Subsurface Defects in Quartz Crystal Elements
After the plasma etching of quartz crystal, the crystal lattice underwent changes in response to the length of plasma etching time. The lattice arrangement of quartz crystal was the most orderly after plasma etching for 1000 nm, and with the increase in ...
Qingzhi Li +4 more
doaj +1 more source
SiO2 etching characteristics were investigated in detail. Patterned SiO2 was etched using radio-frequency capacitively coupled plasma with pulse modulation in a mixture of argon and fluorocarbon gases.
Won-nyoung Jeong +4 more
doaj +1 more source
Dry etching of monocrystalline silicon using a laser-induced reactive micro plasma
Dry etching is a prevalent technique for pattern transfer and material removal in microelectronics, optics and photonics due to its high precision material removal with low surface and subsurface damage.
Robert Heinke +3 more
doaj +1 more source
Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching
At present, with the development of nanotechnology, plasma-chemical etching remains practically the only tool for transferring an integrated circuit pattern in a masking layer to a substrate material due to the fact that the pattern transfer accuracy is ...
V. V. Emelyanov
doaj +1 more source
Etching of a fluoropolymer coating synthesized by the hot wire chemical vapor deposition method in a low-frequency induction discharge plasma [PDF]
The process of plasma etching for the formation of a biphilic pattern in a continuous homogeneous fluoropolymer coating on a copper substrate is studied.
Petrova Anna +3 more
doaj +1 more source
Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching
In order to further understand the excitation process of inductively coupled plasma (ICP) and improve the etching efficiency of silicon carbide (SiC), the effect of temperature and atmospheric pressure on plasma etching of silicon carbide was ...
Shaozhen Xu +4 more
doaj +1 more source

