Results 11 to 20 of about 1,458,991 (299)
Heat transfer properties of laser assisted plasma processing [PDF]
, 2012 Laser assisted plasma processing (LAPP) is a novel extension to already established Reactive Atom Plasma (RAP) processing for atmospheric pressure dry chemical etching of silicon based materials; this is mainly applied for optical uses.
Parkins, Jonathon
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Dry etching and sputtering [PDF]
, 2004 Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in two contexts within a dry-etch process. Incoming ions cause removal of volatile products that arise from the interaction between the dry-etch plasma and ...
Wilkinson, C.D.W., Rahman, M.
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Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 At present, with the development of nanotechnology, plasma-chemical etching remains practically the only tool for transferring an integrated circuit pattern in a masking layer to a substrate material due to the fact that the pattern transfer accuracy is ...
V. V. Emelyanov
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Etching of a fluoropolymer coating synthesized by the hot wire chemical vapor deposition method in a low-frequency induction discharge plasma [PDF]
E3S Web of ConferencesThe process of plasma etching for the formation of a biphilic pattern in a continuous homogeneous fluoropolymer coating on a copper substrate is studied.
Petrova Anna +3 more
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Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching
Micromachines, 2023 In order to further understand the excitation process of inductively coupled plasma (ICP) and improve the etching efficiency of silicon carbide (SiC), the effect of temperature and atmospheric pressure on plasma etching of silicon carbide was ...
Shaozhen Xu +4 more
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Atomic-layer soft plasma etching of MoS2. [PDF]
Sci Rep, 2016 Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the
Xiao S +8 more
europepmc +3 more sources
ICP Etching of Silicon for Micro and Nanoscale Devices [PDF]
, 2010 The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon.
Henry, Michael David
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A New Reactive Atom Plasma Technology (RAPT) for Precision Machining: the Etching of ULE® Surface [PDF]
, 2006 Results on reactive atom plasma etching performed on ULE® (Corning Ultra Low Expansion) glass samples at atmospheric pressure are presented for the first time.
Lyford, N. +6 more
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Advanced Etching Techniques of LiNbO3 Nanodevices
Nanomaterials, 2023 Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant ...
Bowen Shen +7 more
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Anisotropic etching of graphite and graphene in a remote hydrogen plasma
npj 2D Materials and Applications, 2017 Nanofabrication: remote etching of graphene on hBN is highly anisotropic Etching of graphite with hydrogen plasma gives rise to two distinct etching regimes, governed by the degree of direct plasma exposure. A team led by D. M.
D. Hug +8 more
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