Results 31 to 40 of about 2,786,485 (335)

Plasma Processing of III-V Materials for Energy Efficient Electronics Applications [PDF]

, 2017
This paper reviews some recent activity at the James Watt Nanofabrication Centre in the University of Glasgow in the area of plasma processing for energy efficient compound semiconductor-based transistors.
Fu, Yen-Chun, Li, Xu, Millar, David, Peralagu, Uthayasankaran, Thayne, Iain   +4 more
core   +1 more source

Contamination Particles and Plasma Etching Behavior of Atmospheric Plasma Sprayed Y2O3 and YF3 Coatings under NF3 Plasma

Coatings, 2019
Yttrium oxide (Y2O3) and yttrium oxyfluoride (YO0.6F2.1) protective coatings were prepared by an atmospheric plasma spraying technique. The coatings were exposed to a NF3 plasma.
Je-Boem Song, Jin-Tae Kim, S. Oh, J. Yun
semanticscholar   +1 more source

Atmospheric pressure plasma directed assembly during photoresist removal: A new route to micro and nano pattern formation

Micro and Nano Engineering, 2019
We propose a new route for pattern formation based on atmospheric pressure plasma directed assembly during photoresist removal. Atmospheric plasma etching of AZ5214E resist coated on Silicon leads to the formation of periodic, oxygen-plasma resistant ...
P. Dimitrakellis, A. Smyrnakis, V. Constantoudis, D. Tsoutsou, A. Dimoulas, E. Gogolides   +5 more
doaj   +1 more source

Effect of plasma process on n-GaN surface probed with electrochemical short loop

Power Electronic Devices and Components, 2023
Plasma etching treatments are important steps in GaN-based devices fabrication, but can create defects on GaN surfaces. These surface defects can strongly alter device performances.
Carole Pernel, William Berthou, Sidharth Suman, Simon Ruel, Laura Vauche   +4 more
doaj   +1 more source

Gold surface with gold nitride–a surface enhanced Raman scattering active substrate [PDF]

, 2009
The nitration of gold surfaces is a nonpolluting method, which can lead to large scale production of substrates with remarkable properties and applications. We present a topographical study of the nanoscale structure of the gold nitride surfaces produced
Alves, Luis, Brieva, A.C., Krishnamurthy, Satheesh, Siller, Lidija   +3 more
core   +2 more sources

Micro-texturing into DLC/diamond coated molds and dies via high density oxygen plasma etching

Manufacturing Review, 2015
Diamond-Like Carbon (DLC) and Chemical Vapor Deposition (CVD)-diamond films have been widely utilized not only as a hard protective coating for molds and dies but also as a functional substrate for bio-MEMS/NEMS.
Yunata Ersyzario Edo, Aizawa Tatsuhiko
doaj   +1 more source

Plasma-etching enhanced titanium oxynitride active phase with high oxygen content for ambient electrosynthesis of ammonia

Electrochemistry communications, 2019
Here we report that the plasma-etching processed commercial titanium nitride (TiN-PE, PE represents plasma-etching) that was first treated by ball-milling method (TiN BM, BM represents ball-milling) is highly electrochemically active for the nitrogen (N2)
Shenghong Kang, Jialu Wang, Shengbo Zhang, Cuijiao Zhao, Guozhong Wang, W. Cai, Haimin Zhang   +6 more
semanticscholar   +1 more source

Future of plasma etching for microelectronics: Challenges and opportunities

Journal of Vacuum Science & Technology B
Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet ...
G. Oehrlein, Stephan M. Brandstadter, Robert L. Bruce, Jane P. Chang, Jessica C. DeMott, Vincent M. Donnelly, R. Dussart, A. Fischer, R. Gottscho, S. Hamaguchi, M. Honda, Masaru Hori, Kenji Ishikawa, S. Jaloviar, K. J. Kanarik, K. Karahashi, Akiteru Ko, H. Kothari, Nobuyuki Kuboi, M. Kushner, T. Lill, P. Luan, A. Mesbah, E. Miller, Shoubhanik Nath, Y. Ohya, M. Omura, C. Park, John Poulose, Shahid Rauf, M. Sekine, Taylor G. Smith, Nathan Stafford, T. Standaert, P. Ventzek   +34 more
semanticscholar   +1 more source

Database Development of SiO₂ Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe

Nanomaterials, 2022
In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typically employed in the dilution of the FC plasma due to its cost effectiveness and accessibility.
Youngseok Lee, Heejung Yeom, Daehan Choi, Sijun Kim, Jangjae Lee, Junghyung Kim, Hyochang Lee, ShinJae You   +7 more
doaj   +1 more source

Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures [PDF]

, 2002
This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF/sub 6//O/sub 2/-based high-density plasmas at cryogenic temperatures.
Boer, Meint J. de, Elwenspoek, Miko, Gardeniers, J.G.E. (Han), Gilde, Melis-Jan, Jansen, Henri V., Roelofs, Gerard, Sasserath, Jay N.   +6 more
core   +2 more sources