The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [PDF]
, 1994 Very deep trenches (up to 200 µm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and negatively (i.e.
de Boer, Meint J. +4 more
core +4 more sources
Advanced Engineering Materials, EarlyView.This study investigates laser‐based oxide removal of Cu inserts in oxygen‐free conditions and examines long‐term oxidation kinetics and surface chemistry under different atmospheres via X‐ray photoelectron spectroscopy. Al–Cu compound casting with differently oxidized surfaces is performed, and intermetallic phase formation, morphology, and thermal ...
Timon Steinhoff +9 more
wiley +1 more source
Review of plasma etching processes for III-V semiconductorsMendeley Data
Micro and Nano EngineeringThis paper provides a comprehensive literature review and analysis of III-V semiconductor plasma etching, highlighting key etching considerations and providing literature references to inform future process development. Plasma etching processes for III-V
Alison Clarke +3 more
doaj +1 more source
Exploring Vacuum Casting Techniques for Micron and Submicron Features [PDF]
, 2004 A study of resolution limits in standard rapid prototyping vacuum cast molding processes and adaptation of this technique to reach submicron accuracy is proposed.
Denoual, M., Lepioufle, B., Mognol, P.
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Assessing Altered Coating Adhesion on Plasma‐Deoxidized Surfaces Under Oxygen‐Free Conditions
Advanced Engineering Materials, EarlyView.This study demonstrates the effectiveness of atmospheric pressure plasma pretreatment in modifying silicon and stainless steel surfaces to improve adhesion. Argon‐hydrogen plasma increases surface roughness and improves adhesion strength, whereas pure argon results in smoother surfaces and structural changes.
Selina Raumel +6 more
wiley +1 more source
Robust Spot Melting by 3D Spot Arrangements in Electron Beam Powder Bed Fusion
Advanced Engineering Materials, EarlyView.This work proposes an approach to replace separately melted contours for spot melting in electron beam powder fusion. Adapting the spot arrangements close to the contour combined with stacking yields a comparable surface quality without the inherent challenges of separate contours, as demonstrated, by electron optical images and roughness measurements.
Tobias Kupfer +4 more
wiley +1 more source
Numerical simulation of plasma etching process with AAO mask based on PIC/MCC model
ChemPhysMaterThis paper presents a Particle-in-Cell Monte Carlo Collision (PIC/MCC) numerical simulation to investigate plasma etching processes utilizing an anodic aluminum oxide (AAO) mask.
Zeping Li +4 more
doaj +1 more source
Plasma Power Effect on the Surfaces of a Quartz Crystal During Etching using Tetrafluoroethane Gas
International Journal of Technology, 2017 The performance of a quartz crystal microbalance (QCM) biosensor can be enhanced by patterning the surface of the SiO2 substrate. In this study, the patterning was realized by a plasma etching process.
Masruroh Masruroh +3 more
doaj +1 more source
Microwave power coupling in a surface wave excited plasma
, 2014 In recent decades, different types of plasma sources have been used for various types of plasma processing, such as, etching and thin film deposition. The critical parameter for effective plasma processing is high plasma density. One type of high density
Alberts, Lukas +2 more
core +2 more sources
Design of experiment for the optimisation of deep reactive ion etching of silicon inserts for micro-fabrication [PDF]
, 2012 The following paper describes a design of experiments investigation of the deep reactive of pillar structures on a silicon wafer. The etched wafers would subsequently be used as masters for the fabrication of nickel mould inserts for microinjection ...
Alcock, Jeffrey R. +2 more
core +1 more source