Results 41 to 50 of about 1,458,991 (299)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Numerical simulation of plasma etching process with AAO mask based on PIC/MCC model

ChemPhysMater
This paper presents a Particle-in-Cell Monte Carlo Collision (PIC/MCC) numerical simulation to investigate plasma etching processes utilizing an anodic aluminum oxide (AAO) mask.
Zeping Li, Ran An, Mingyan Yang, Dongjing Li, Hao Wu   +4 more
doaj   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

EFFECT OF OXYGEN ON SI ETCH PROFILE USING DC SF6 PLASMA MICROMACHINING

Diyala Journal of Engineering Sciences, 2010
Plasma etching with tapered profile structure (high aspect ratio structures) in silicon is an important step in manufacturing capacitors for memory devices and integrated components of microelectromechanical systems. In these applications, the goal is to
Shrok Abdullah
doaj  

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Resistance abilities of （100）/（111）-faceted diamond films against oxygen plasma etching

Journal of Aeronautical Materials, 2019
The resistance abilities of (100) and (111)-faceted diamond films against oxygen plasma, 100 μm as film thickness, were investigated by the microwave power chemical vapor deposition (MPCVD) technique.
SUN Qi, WANG Jianhua, CHENG Chong, CHEN Xianglei, WU Rongjun, LIU Dan, ZHU Jiao   +6 more
doaj   +1 more source

Role of Plasma Surface Treatments on Wetting and Adhesion

, 2009
There are many current and emerging wetting and adhesion issues which require an additional surface processing to enhance interfacial surface properties.
Sparavigna, Amelia Carolina, Wolf R., Rory Wolf, Wolf, R., Amelia Carolina Sparavigna   +4 more
core   +1 more source

Dynamically Actuated Reconfigurable Topographical Surface Enables Active Control of Implant‐Associated Infections

Advanced Functional Materials, EarlyView.
A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash, Jihun Lee, J. Scott VanEpps, Sungmin Nam, Jouha Min   +4 more
wiley   +1 more source

Isotropic plasma atomic layer etching of Al2O3

, 2020
Data used to plot all of the figures in the letter titled "Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3)".
Chittock, Nicholas J., Selective atomic-scale processing for nanoelectronics, Plasma & Materials Processing   +2 more
core   +1 more source