Results 41 to 50 of about 2,786,485 (335)

The Role of the Substrate on Pattern-Dependent Charging [PDF]

, 1997
Monte Carlo simulations of charging and profile evolution during plasma etching reveal that the substrate can mediate current imbalance across the wafer.
Giapis, Konstantinos P., Hwang, Gyeong S.   +1 more
core   +1 more source

Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching

Journal of the European Ceramic Society, 2019
To reveal dislocations in SiC wafers, conventionally, molten KOH etching method has been widely used. However, when highly doped sites exist on the wafer, the molten KOH etching method is not applicable owing to the enhanced isotropic electrochemical ...
Yi Zhang, Rulin Li, Yongjie Zhang, Dianzi Liu, H. Deng   +4 more
semanticscholar   +1 more source

The influence of electron temperature on pattern-dependent charging during etching in high-density plasmas [PDF]

, 1997
The effect of the electron temperature (Te) on charging potentials that develop in trenches during plasma etching of high aspect ratio polysilicon-on-insulator structures is studied by two-dimensional Monte Carlo simulations.
Giapis, Konstantinos P., Hwang, Gyeong S.   +1 more
core   +1 more source

Separated Type Atmospheric Pressure Plasma Microjets Array for Maskless Microscale Etching

Micromachines, 2017
Maskless etching approaches such as microdischarges and atmospheric pressure plasma jets (APPJs) have been studied recently. Nonetheless, a simple, long lifetime, and efficient maskless etching method is still a challenge.
Yichuan Dai, Man Zhang, Qiang Li, Li Wen, Hai Wang, Jiaru Chu   +5 more
doaj   +1 more source

Experimental demonstration of graphene plasmons working close to the near-infrared window [PDF]

, 2016
Due to strong mode-confinement, long propagation-distance, and unique tunability, graphene plasmons have been widely explored in the mid-infrared and terahertz windows.
Almdal, Kristoffer, Li, Tao, Mortensen, N. Asger, Ndoni, Sokol, Wang, Zhongli, Xiao, Sanshui   +5 more
core   +3 more sources

Investigation of material removal characteristics of Si (100) wafer during linear field atmospheric-pressure plasma etching

Nanotechnology and Precision Engineering, 2020
Atmospheric-pressure (AP) plasma etching provides an alternative method for mechanical grinding to realize wafer thinning of Si wafer. It can avoid the damages and micro-cracks that would be introduced by mechanical stress during the grinding process. In
Weijia Guo, Senthil Kumar A., Peng Xu
doaj   +1 more source

High-temperature etching of SiC in SF6/O2 inductively coupled plasma

Scientific Reports, 2020
In this work, we demonstrate an effective way of deep (30 µm depth), highly oriented (90° sidewall angle) structures formation with sub-nanometer surface roughness (Rms = 0.7 nm) in silicon carbide (SiC).
A. Osipov, Gleb A. Iankevich, A. B. Speshilova, A. Osipov, E. Endiiarova, V. Berezenko, I. Tyurikova, K. Tyurikov, S. Alexandrov   +8 more
semanticscholar   +1 more source

Thermodynamic Pathways of Nonequilibrium Solidification in Wire‐Arc Additive Manufacturing Fe‐Based Multicomponent Alloy Structures

Advanced Engineering Materials, EarlyView.
Geometry‐driven thermal behavior in wire‐arc additive manufacturing (WAAM) influences microstructural evolution during nonequilibrium solidification of a chemically complex Fe–Cr–Nb–W–Mo–C nanocomposite system. By comparing different deposits configurations, distinct entropy–cooling rate correlations, segregation, and carbide evolution are revealed ...
Blanca Palacios, Anthony Gonzalez, Aleksander Aleman, Tyler Dolmetsch, Tanaji Paul, Arvind Agarwal   +5 more
wiley   +1 more source

Estimation of the Optimum Etching Time and Etching Parameters for CR-39 Nuclear Tracks Detector by Applying Plasma and Chemical Etching Techniques

Al-Mustansiriyah Journal of Science
Background: CR-39 nuclear track detectors are widely used in various fields, including science, technology, astronomy, and environmental preservation, to detect and register heavy ions, neutrons, and alpha particles.
Abdulkader Makki Dahham, Jamoliddin Razzokov, Eldor Karimbaev, Raghad S. Mohammed   +3 more
doaj   +1 more source

Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma

Micromachines, 2021
The high-speed etching of a silicon wafer was experimentally investigated, focusing on the duty factor of 150 kHz band high-power burst inductively coupled plasma.
Hisaki Kikuchi, Katsuyuki Takahashi, Seiji Mukaigawa, Koichi Takaki, Ken Yukimura   +4 more
doaj   +1 more source