Results 41 to 50 of about 27,754 (260)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Analysis of Current Research Status of Plasma Etch Process Model

open access: yesJournal of Microelectronic Manufacturing, 2018
This paper summarizes the status of the plasma etch process modeling research. It mainly introduces typical etching models employing the analytical method, geometric method, system identification method, basic principle simulation method, as well as ...
Xiaoting Li   +8 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching

open access: yesAIP Advances
β-Ga2O3 air bridges on (100) substrates were fabricated through a self-aligning process that used conventional anisotropic BCl3/Ar-plasma etching and crystallographic plasma-free HCl gas ...
Takayoshi Oshima, Yuichi Oshima
doaj   +1 more source

Transfer of micron pattern with reactive atmospheric plasma jets into fused silica

open access: yesApplied Surface Science Advances
Pattern transfer by plasma etching is a traditional standard technology in microelectronics and other micron technologies. These technologies require vacuum conditions, which limit throughput, size, and low-cost fabrication.
Martin Ehrhardt   +5 more
doaj   +1 more source

Multimodal Soft Surgical Robots Enabled by Eco‐Degradable, Sterilizable Polymers and Transient Electronics

open access: yesAdvanced Functional Materials, EarlyView.
A compostable PGS soft surgical robot with interchangeable modules integrates transient Mo tactile and Si thermal sensors for dual feedback. The device preserves its function after clinical‐grade sterilization, demonstrates stable actuation and cardiac tissue grasping with real‐time in vivo pulsatile monitoring, and biodegrades post‐use with soil‐safe, 
Minseong Chae   +27 more
wiley   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

Impact of Ar/CF4 Mixed Gas Flow Rate on Silicon Etching Using Surface Discharge Plasma

open access: yesApplied Sciences
This study examines the effects of varying argon (Ar) and carbon tetrafluoride (CF4) gas flow rates on the etching of monocrystalline silicon substrates using surface discharge plasma.
Toshiyuki Hamada   +2 more
doaj   +1 more source

Evolution of surface morphology and properties of diamond films by hydrogen plasma etching

open access: yesGreen Processing and Synthesis, 2023
The micron-scale diamond film was prepared using hydrogen and methane as the mixed gas supplies via self-developed 3 kW/2,450 MHz microwave plasma chemical vapor deposition (MPCVD) equipment.
Chu Genjie   +5 more
doaj   +1 more source

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