Results 21 to 30 of about 27,754 (260)

Database Development of SiO₂ Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe

Nanomaterials, 2022
In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typically employed in the dilution of the FC plasma due to its cost effectiveness and accessibility.
Youngseok Lee, Heejung Yeom, Daehan Choi, Sijun Kim, Jangjae Lee, Junghyung Kim, Hyochang Lee, ShinJae You   +7 more
doaj   +1 more source

Separated Type Atmospheric Pressure Plasma Microjets Array for Maskless Microscale Etching

Micromachines, 2017
Maskless etching approaches such as microdischarges and atmospheric pressure plasma jets (APPJs) have been studied recently. Nonetheless, a simple, long lifetime, and efficient maskless etching method is still a challenge.
Yichuan Dai, Man Zhang, Qiang Li, Li Wen, Hai Wang, Jiaru Chu   +5 more
doaj   +1 more source

The Cutting Edge of Plasma Etching

Science, 2008
Better etching methods for creating more finely structured microcircuits will require close attention to basic plasma physics and surface chemistry.
Lill, Thorsten, Joubert, Olivier
openaire   +3 more sources

Thermodynamic Pathways of Nonequilibrium Solidification in Wire‐Arc Additive Manufacturing Fe‐Based Multicomponent Alloy Structures

Advanced Engineering Materials, EarlyView.
Geometry‐driven thermal behavior in wire‐arc additive manufacturing (WAAM) influences microstructural evolution during nonequilibrium solidification of a chemically complex Fe–Cr–Nb–W–Mo–C nanocomposite system. By comparing different deposits configurations, distinct entropy–cooling rate correlations, segregation, and carbide evolution are revealed ...
Blanca Palacios, Anthony Gonzalez, Aleksander Aleman, Tyler Dolmetsch, Tanaji Paul, Arvind Agarwal   +5 more
wiley   +1 more source

Estimation of the Optimum Etching Time and Etching Parameters for CR-39 Nuclear Tracks Detector by Applying Plasma and Chemical Etching Techniques

Al-Mustansiriyah Journal of Science
Background: CR-39 nuclear track detectors are widely used in various fields, including science, technology, astronomy, and environmental preservation, to detect and register heavy ions, neutrons, and alpha particles.
Abdulkader Makki Dahham, Jamoliddin Razzokov, Eldor Karimbaev, Raghad S. Mohammed   +3 more
doaj   +1 more source

Investigation of material removal characteristics of Si (100) wafer during linear field atmospheric-pressure plasma etching

Nanotechnology and Precision Engineering, 2020
Atmospheric-pressure (AP) plasma etching provides an alternative method for mechanical grinding to realize wafer thinning of Si wafer. It can avoid the damages and micro-cracks that would be introduced by mechanical stress during the grinding process. In
Weijia Guo, Senthil Kumar A., Peng Xu
doaj   +1 more source

Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma

Micromachines, 2021
The high-speed etching of a silicon wafer was experimentally investigated, focusing on the duty factor of 150 kHz band high-power burst inductively coupled plasma.
Hisaki Kikuchi, Katsuyuki Takahashi, Seiji Mukaigawa, Koichi Takaki, Ken Yukimura   +4 more
doaj   +1 more source

Robust Spot Melting by 3D Spot Arrangements in Electron Beam Powder Bed Fusion

Advanced Engineering Materials, EarlyView.
This work proposes an approach to replace separately melted contours for spot melting in electron beam powder fusion. Adapting the spot arrangements close to the contour combined with stacking yields a comparable surface quality without the inherent challenges of separate contours, as demonstrated, by electron optical images and roughness measurements.
Tobias Kupfer, Lukas Spano, Sebastian Pohl, Carolin Körner, Matthias Markl   +4 more
wiley   +1 more source

Review of plasma etching processes for III-V semiconductorsMendeley Data

Micro and Nano Engineering
This paper provides a comprehensive literature review and analysis of III-V semiconductor plasma etching, highlighting key etching considerations and providing literature references to inform future process development. Plasma etching processes for III-V
Alison Clarke, Maxime Darnon, Karin Hinzer, Mathieu de Lafontaine   +3 more
doaj   +1 more source

Diagnostics of etching plasmas [PDF]

Pure and Applied Chemistry, 2002
Abstract Radio-frequency excited, low-pressure plasmas in halogen-containing gases are widely used to etch submicronic features in a range of materials during integrated circuit manufacture. Costly process-drift problems are often caused by the ubiquitous deposition of polymer layers on the reactor walls. Simple and robust sensors of the
openaire   +1 more source