Results 21 to 30 of about 2,786,485 (335)
Plasma Processing of Large Curved Surfaces for SRF Cavity Modification [PDF]
, 2014 Plasma based surface modification of niobium is a promising alternative to wet etching of superconducting radio frequency (SRF) cavities. The development of the technology based on Cl2/Ar plasma etching has to address several crucial parameters which ...
Im, Do +5 more
core +4 more sources
Predicting Time-to-Failure of Plasma Etching Equipment using Machine Learning [PDF]
International Conference on Prognostics and Health Management, 2019 Predicting unscheduled breakdowns of plasma etching equipment can reduce maintenance costs and production losses in the semiconductor industry. However, plasma etching is a complex procedure and it is hard to capture all relevant equipment properties and
Anahid N. Jalali +7 more
semanticscholar +1 more source
Double heterostructure lasers with facets formed by a hybrid wet and reactive-ion-etching technique [PDF]
, 1985 Double heterostructure lasers were fabricated in which one of the laser facets was produced by a hybrid wet and reactive-ion-etching technique. This technique is suitable for GaAs/GaAlAs heterostructure lasers and utilizes the selectivity of the plasma ...
Margalit, S. +3 more
core +1 more source
Plasma etching of wide bandgap and ultrawide bandgap semiconductors
, 2020 The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride ...
S. Pearton, E. Douglas, R. Shul, F. Ren
semanticscholar +1 more source
Plasma removal of Parylene C [PDF]
, 2008 Parylene C, an emerging material in microelectromechanical systems, is of particular interest in biomedical and lab-on-a-chip applications where stable, chemically inert surfaces are desired.
Li, Po-Ying, Meng, Ellis, Tai, Yu-Chong
core +1 more source
Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching [PDF]
, 2019 With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is steadily increasing.
Cabrini, S +8 more
core +1 more source
Advanced Etching Techniques of LiNbO3 Nanodevices
Nanomaterials, 2023 Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant ...
Bowen Shen +7 more
doaj +1 more source
Advances in precision freeform manufacturing by plasma jet machining -INVITED [PDF]
EPJ Web of Conferences, 2020 Atmospheric pressure plasma jet machining technology provides a flexible and efficient way to fabricate precise freeform optics. Due to the pure chemical material removal mechanism based on a dry etching process using fluorine containing gas, the choice ...
Arnold Thomas +2 more
doaj +1 more source
Scientific Reports, 2022 Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted Ar/ammonium hydroxide vapor plasma. FW-assisted non-halogen vapor plasma generated at medium pressure
Thi-Thuy-Nga Nguyen +7 more
doaj +1 more source
Effect of oxygen plasma etching on graphene studied with Raman spectroscopy and electronic transport [PDF]
, 2010 We report a study of graphene and graphene field effect devices after exposure to a series of short pulses of oxygen plasma. We present data from Raman spectroscopy, back-gated field-effect and magneto-transport measurements.
Isaac Childres +10 more
core +3 more sources