Results 181 to 190 of about 10,942,539 (365)

Recurrent excitatory postsynaptic potentials induced by synchronized fast cortical oscillations

, 1997
Miles A. Whittington, Roger D. Traub, Howard J. Faulkner, Ian M. Stanford, John G. R. Jefferys   +4 more
openalex   +2 more sources

Electrokinetic mechanism of miniature postsynaptic potentials. [PDF]

Proceedings of the National Academy of Sciences, 1966
L, Bass, W J, Moore
openaire   +2 more sources

Water‐Assisted Exfoliation of HfO2‐Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors

Advanced Science, EarlyView.
A flexible freestanding HfO2‐based ferroelectric membrane is achieved via a water‐assisted exfoliation technique using a Sr4Al2O₇ sacrificial layer. The BaTiO3/Hf0.5Zr0.5O2/BaTiO3 heterostructure maintains robust ferroelectricity and exhibits reliable synaptic plasticity.
Han Zhang, Miao Zeng, Jingxin Chen, Lei Wang, Sai Jiang, Qian Cao, Xuebo Li, Zekun Hou, Chun Shen, Yulin Gan, Ning Fang, Zhaoliang Liao, Ziyao Zhou, Lin Hao   +13 more
wiley   +1 more source

Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R‐MoS2 for Polarization‐Dependent Reconfigurable Optoelectronic Synapses

Advanced Science, EarlyView.
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue, Jincheng Zhang, Yuying Wang, Yu Wang, Kuiwei Li, Yuxuan Chen, Fang Zhong, Qing Li, Ning Zhou, Chenying Yang, Yuchuan Shao, Tao Liang   +11 more
wiley   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors

Advanced Electronic Materials, EarlyView.
Electrolyte‐gated organic synaptic transistor (EGOST)‐based neuromorphic motor control systems integrate sensing, processing, and actuation by mimicking biological synapses. With advantages such as low power consumption, tunable synaptic plasticity, and mechanical flexibility, they are emerging as next‐generation core technologies for real‐time ...
Sung‐Hwan Kim, Ju‐Hyeok Yun, Hea‐Lim Park, Sin‐Hyung Lee   +3 more
wiley   +1 more source

Long‐lasting facilitation of excitatory postsynaptic potentials in the rat hippocampus by acetylcholine.

, 1990
Henry Markram, Menahem Segal
openalex   +2 more sources

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

Advanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho   +10 more
wiley   +1 more source

3-Nitrotyrosine activates excitatory interneurons by inhibiting GABA receptors in the rat spinal dorsal horn. [PDF]

Pain Rep
Kaimochi Y, Yamanaka M, Taniguchi W, Nishio N, Matsuyama Y, Ueno T, Miyake R, Yamamoto Y, Nakatsuka T, Yamada H.   +9 more
europepmc   +1 more source

SYNAPTIC DELAY AND TIME COURSE OF POSTSYNAPTIC POTENTIALS AT THE JUNCTION BETWEEN HAIR CELLS AND EIGHTH NERVE FIBERS IN THE GOLDFISH

, 1972
Taro Furukawa, Yoshihisa ISHII, Shiushi Matsuura   +2 more
openalex   +2 more sources