Results 1 to 10 of about 277,685 (261)
Improved MRD 4H-SiC MESFET with High Power Added Efficiency [PDF]
Micromachines, 2019 An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technology ...
Shunwei Zhu +6 more
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An Improved UU-MESFET with High Power Added Efficiency [PDF]
Micromachines, 2018 An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor ...
Hujun Jia, Mei Hu, Shunwei Zhu
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Improved DRUS 4H-SiC MESFET with High Power Added Efficiency [PDF]
Micromachines, 2019 A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper.
Hujun Jia +7 more
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An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency [PDF]
Micromachines, 2021 An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper.
Hujun Jia +4 more
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A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band
IEEE Journal of the Electron Devices Society, 2023 In this letter, AlGaN/GaN HEMTs with tall-gate-stem structures were realized to improve the power performance of Ka-band devices, and a film thinning process is adopted in the fabrication process to reduce the parasitic capacitance caused by the thick ...
Ping-Hsun Lee +6 more
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Review of Efficiency CMOS Class AB Power Amplifier Topology in Gigahertz Frequencies
ASM Science Journal, 2022 This paper reviewed the efficiency of CMOS class AB power amplifier topology especially in gigahertz frequencies. CMOS class AB power amplifier is a compromise between class A and class B in terms of linearity and efficiency between 50% to 78.5%. However,
Rohana Sapawi
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Design of miniaturized high efficiency power amplifier based on harmonic suppression
Dianzi Jishu Yingyong, 2023 To overcome conventional VHF power amplifiers′ shortcomings of bulky size, low efficiency, and EM interferences due to output harmonics, a miniaturized, high power and high efficiency power amplifier working in VHF band is designed by using lumped ...
Liu Tianyun, Liu Shaobin
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Injection Locking in Switching Power Amplifiers
IEEE Access, 2020 In this work, injection locking in switching power amplifiers (PAs) is studied. Traditionally, injection-locked PAs (ILPAs) have supported phase modulation, with injection locking used primarily to improve the power-added efficiency by reducing the power
Amit Kumar Mishra +2 more
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Development of Efficient High Power Amplifier With More Than an Octave Bandwidth
IEEE Access, 2018 This paper presents a design of a GaN HEMT-based power amplifier (PA), with enhanced efficiency and linearity over the operation band from 0.5 to 1.5 GHz. The design is based on wideband load-pull and source-pull analysis.
Waqar Ahmad Malik +2 more
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The Journal of Engineering, 2015 Integration of a class-E power amplifier (PA) and a thin-film bulk acoustic wave resonator (FBAR) filter is shown to provide high power added efficiency in addition to superior out-of-band spectrum suppression.
Kyle Holzer, Jeffrey S. Walling
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