Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation [PDF]
Sensors, 2017 A power MOSFET linearizer is proposed for a high-voltage power amplifier (HVPA) used in high-frequency pulse-echo instrumentation. The power MOSFET linearizer is composed of a DC bias-controlled series power MOSFET shunt with parallel inductors and ...
Hojong Choi +3 more
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Vertical GaN MOSFET Power Devices
Micromachines, 2023 Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices.
Catherine Langpoklakpam +4 more
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Long-Term Lifetime Prediction of Power MOSFET Devices Based on LSTM and GRU Algorithms
Mathematics, 2023 Predicting the long-term lifetime of power MOSFET devices plays a central role in the prevention of unprecedented failures for power MOSFETs used in safety-critical applications.
Mesfin Seid Ibrahim +6 more
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Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis [PDF]
MicromachinesThe performance of the Si MOSFET is suppressed when the channel loses its control through the gate. This paper introduces a new and novel high-channel conducting orthogonally oriented selective buried triple gate vertical power MOSFET technology to study
M. Ejaz Aslam Lodhi +4 more
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High Performance Multiple Inversion Layer Selective Buried Triple Gate Vertical Trench Power MOSFET [PDF]
Scientific ReportsThis paper analyses the various properties that governs a power MOSFET for a novel and unique vertical triple gate selective buried trench power MOSFET. Our recent work consists of a MOSFET having two lateral selective buried gates and a single vertical ...
M. Ejaz Aslam Lodhi +4 more
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Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2021 The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component.
Sebastian Bąba
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Energies, 2022 This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance ...
Edemar O. Prado +3 more
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Dynamic Performance Evaluation of Bidirectional Bridgeless Interleaved Totem-Pole Power Factor Correction Boost Converter [PDF]
MicromachinesThis study aims to conduct an assessment of the dynamic characteristics of a proposed 6.6 kW bidirectional bridgeless three-leg interleaved totem-pole power factor correction (PFC) boost converter developed for the front-end stage of electric vehicle ...
Hsien-Chie Cheng +5 more
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Problems related to the correct determination of switching power losses in high-speed SiC MOSFET power modules [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2022 High-speed switching capabilities of SiC MOSFET power modules allow building high power converters working with elevated switching frequencies offering high efficiencies and high power densities.
Dawid Zięba, Jacek Rąbkowski
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IEEE Access, 2023 We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the ratio ...
Vikas Joshi +5 more
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