Design and Comparison of SiC MOSFET inverter for Underwater High-Power and High-Speed Motor
水下无人系统学报, 2023 The proposal of deep and high sea and the application target of high maneuverability and concealment means that the future power system of underwater vehicles should have higher speed, power density, and efficiency.
Li ZHAI +5 more
doaj +1 more source
The impact of repetitive unclamped inductive switching on the electrical parameters of low-voltage trench power nMOSFETs [PDF]
, 2010 The impact of hot-carrier injection (HCI) due to repetitive unclamped inductive switching (UIS) on the electrical performance of low-voltage trench power n-type MOSFETs (nMOSFETs) is assessed.
Alatise, Olayiwola M. +7 more
core +1 more source
Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout [PDF]
, 2011 4 pagesInternational audienceIn this paper the usefulness of the nth power law MOSFET model under Hot Carrier Injection (HCI) wearout has been experimentally demonstrated.
Ben Dhia, Sonia +5 more
core +3 more sources
Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits
IEEE Journal of the Electron Devices Society, 2021 A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance $R_{on}$ A reduction and high speed switching due to flat ...
Taichi Ogawa +2 more
doaj +1 more source
Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs
IEEE Access, 2020 Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals ...
Utkarsh Jadli +5 more
doaj +1 more source
SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions [PDF]
, 2017 The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Voltage rating of commercial GaN power transistors is less than 650V while that of SiC power transistors is less than 1200V.
Acanski M. +12 more
core +2 more sources
Hierarchical approach to 'atomistic' 3-D MOSFET simulation [PDF]
, 1999 We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1-μm MOSFETs. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average ...
Asenov, A. +3 more
core +2 more sources
A 2-MHz 2-kW voltage-source inverter for low-temperature plasma generators: implementation of fast switching with a third-order resonant circuit [PDF]
, 1999 This paper presents a specially designed third-order resonant circuit intended to achieve fast switching operation for a voltage-source series-resonant inverter using four MOSFETs.
Akagi, Hirofumi, Fujita, Hideaki
core +1 more source
IEEE Access, 2019 Aging has been generally regarded as one of the principal root causes of power device failure, due to it makes the performance of power device degradative, which will directly influence the electrical–thermal performances of the power device. Thus,
Shengyou Xu +5 more
doaj +1 more source
Current-fed quasi-Z-source H7 inverter with reduced stress on SiC power devices [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2019 This paper discusses selected problems regarding a high-frequency improved current-fed quasi-Z-source inverter (iCFqZSI) designed and built with SiC power devices. At first, new, modified topology of the impedance network is presented.
P. Trochimiuk +2 more
doaj +1 more source