High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module
IEEE Journal of the Electron Devices Society, 2021 SiC MOSFET allows higher temperature capability with higher switching efficiency than that of conventional Si devices, due to its superior electrical and thermal properties.
Yue Chen +3 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2022 SiC Schottky Barrier Diodes (SBDs) have been used in parallel with SiC MOSFETs as a freewheeling diode in power converter applications because the inherent PN body diode of the MOSFET has relatively high forward voltage drop, considerable reverse ...
Dongyoung Kim +4 more
doaj +1 more source
IEEE Access, 2023 This paper combines real-time temperature detection of MOSFETs inside solid-state switches with a temperature field model, and proposes a current limiting protection control strategy based on real-time heat management of MOSFETs.
Yufang Lu +4 more
doaj +1 more source
The Optimizations of MOSFET Contents in EE Undergraduate Course by using the Third Generation Semiconductor (Gallium Nitride) [PDF]
E3S Web of Conferences, 2020 Recently, the third generation semiconductor Gallium Nitride based electrical devices earn a more and more popular status in the industry for its easy popularization and cost effectivity.
Yuanlong Chen
doaj +1 more source
Sensors, 2023 In this article, the performance of n-type junctionless (JL) double-gate (DG) MOSFET-based biosensors with and without gate stack (GS) has been studied. Here, the dielectric modulation (DM) method is applied to detect biomolecules in the cavity.
Dibyendu Chowdhury +7 more
doaj +1 more source
Monitoring Junction Temperature of RF MOSFET under Its Working Condition Using Fiber Bragg Grating
Micromachines, 2022 When a high-power radio frequency (RF) metal oxide semiconductor field effect transistor (MOSFET) works in low-efficiency situations, considerable power is dissipated into heat, resulting in an excessive junction temperature and a likely failure. In this
Zhenmin Liu +5 more
doaj +1 more source
Modelling and simulation of sinusoidal pulse width modulation controller for solar photovoltaic inverter to minimize the switching losses and improving the system efficiency [PDF]
Archives of Electrical Engineering, 2022 With the extinction of fossil fuels and high increase in power demand, the necessity for renewable energy power generation has increased globally. Solar PV is one such renewable energy power generation, widely used these days in the power sector.
Sivaraj Panneerselvam +2 more
doaj +1 more source
Multi-State Probabilistic Computing Using Floating-Body MOSFETs Based on the Potts Model for Solving Complex Combinatorial Optimization Problems. [PDF]
Adv MaterThis work introduces a multi‐state probabilistic computing system based on Potts‐model p‐bits using stochastic switching floating body metal oxide semiconductor field effect transistors (FB‐MOSFETs). By employing drain‐voltage sharing and one‐hot sampling, the system achieves controllable probabilistic behavior.
Cheong S +9 more
europepmc +2 more sources
Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits
IEEE Journal of the Electron Devices Society, 2021 A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance $R_{on}$ A reduction and high speed switching due to flat ...
Taichi Ogawa +2 more
doaj +1 more source
Measurement of Power Dissipation Due to Parasitic Capacitances of Power MOSFETs
IEEE Access, 2020 Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching intervals ...
Utkarsh Jadli +5 more
doaj +1 more source