Results 1 to 10 of about 39,831 (163)
Gate-driver circuit with a variable supply voltage to influence the switching losses
The Journal of Engineering, 2019 The lifetime of semiconductor devices used in power electronics depends on the junction temperature. With a suitable junction temperature control system, the lifetime of semiconductor devices is extended.
Johannes Ruthardt +4 more
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Energies, 2023 This review explores the performance and reliability of power semiconductor devices required to enable the electrification of heavy goods vehicles (HGVs).
Olayiwola Alatise +5 more
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Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends
Energies, 2023 Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion.
Omar Sarwar Chaudhary +3 more
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Sensors, 2017 Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/
Lin-Yue Liu +10 more
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Latent Gate Oxide Damage in SiC MOSFET Induced by Heavy Ions
Yuanzineng kexue jishu, 2023 The single event effect on SiC MOSFET was studied for space applications. 1 200 V SiC MOSFET from four manufactures was irradiated with heavy ions. The ions of carbon (C), germanium (Ge), tantalum (Ta), bismuth (Bi), and uranium (U) were used. The linear
YU Qingkui1,2;CAO Shuang1,2;ZHANG Chenrui1;SUN Yi1,2;MEI Bo1,2;WANG Qianyuan1,2;WANG He1,2;WEI Zhichao1,2;ZHANG Hongwei1,2;ZHANG Teng3;BAI Song3
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Energies, 2023 This paper presents a comprehensive review on the employment of wide bandgap (WBG) semiconductor power devices in wind energy conversion systems (WECSs).
Abdulkarim Athwer, Ahmed Darwish
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New approach to power semiconductor devices modeling
Journal of Telecommunications and Information Technology, 2004 The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are
Andrzej Napieralski +1 more
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Reliability analysis and reliable operation of three-level ANPC inverter
Frontiers in Energy Research, 2023 The three-level active neutral-point-clamped (3L-ANPC) inverters have been widely used in medium-voltage high-power electrical drives. The purpose of this paper is to achieve the reliable operation for 3L-ANPC inverters by reliability analysis and ...
Xiaolin Zheng +4 more
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Research on Power Semiconductor Converter Technology for Rail Transit Applications
机车电传动, 2020 The core of the development of high-power converter technology lies in power semiconductor technology. The iterative optimization of traditional silicon-based power semiconductor devices and the gradually maturity of new wide-band gap material ...
Yu QI, Zechun DOU, Rongjun DING
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Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review
Energies, 2022 Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied
Yalin Wang, Yi Ding, Yi Yin
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