Results 31 to 40 of about 39,831 (163)

Junction Temperature Control System to Increase the Lifetime of IGBT-Power-Modules in Synchronous Motor Drives Without Affecting Torque and Speed

IEEE Open Journal of Power Electronics, 2020
Load changes of electrical machines driven by inverters cause temperature swings of the semiconductor devices in IGBT modules of the inverters. These temperature swings lead to mechanical strain in the different material layers of the IGBT-power-modules ...
Julian Wolfle, Maximilian Nitzsche, Johannes Ruthardt, Jorg Roth-Stielow   +3 more
doaj   +1 more source

Demonstration of a simple and efficient design methodology for high‐voltage floating field limiting ring in SiC power devices

Electronics Letters
This letter, proposes and experimentally demonstrates a simple and efficient estimating method for high‐voltage floating field ring (FFR). Four rings in FFR are used to determine the influence of rings’ distance (d) on the voltage drops of the highest ...
Bingke Zhang, Hang Zhou, Bo Yi, Huan Ge, Rui Jin, Tao Zhu   +5 more
doaj   +1 more source

On-chip light control of semiconductor optoelectronic devices using integrated metasurfaces

Opto-Electronic Advances
Semiconductor optoelectronics devices, capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed, which has ...
Cheng-Long Zheng, Pei-Nan Ni, Yi-Yang Xie, Patrice Genevet   +3 more
doaj   +1 more source

Review of semiconductor devices and other power electronics components at cryogenic temperature

iEnergy
With the increasing demand for high power density, and to meet extreme working conditions, research has been focused on investigating the performance of power electronics devices at cryogenic temperatures.
Yuchuan Liao, Abdelrahman Elwakeel, Yudi Xiao, Rafael Peña Alzola, Min Zhang, Weijia Yuan, Alfonso J. Cruz Feliciano, Lukas Graber   +7 more
doaj   +1 more source

Research methods of reliability indicators of rectifier diode in tablet execution

EPJ Web of Conferences, 2015
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
doaj   +1 more source

Effects of Strain Channel on Electron Irradiation Tolerance of InP-based HEMT Structures

Yuanzineng kexue jishu, 2023
The introduction of strain InxGa1-xAs channel with high In content increases the confinement of the two-dimensional electron gas (2DEG) and further improves the high-frequency performance of InGaAs/InAlAs/InP HEMTs.
FANG Renfeng1;CAO Wenyu1;WEI Yanfeng1;WANG Yin1;CHEN Chuanliang1;YAN Jiasheng2;XING Yan2;LIANG Guijie1,3;ZHOU Shuxing1,3,*
doaj   +1 more source

Research progress on irradiation effect of InP-based high electron mobility transistors

He jishu
Indium phosphide (InP)-based high electron mobility transistors (HEMTs) have been widely adopted in space communication systems such as satellites, manned spaceflight, and deep space exploration due to their high frequency and gain, and low noise ...
FANG Renfeng, ZHOU Shuxing, CAO Wenyu, WEI Yanfeng, WANG Jingyang, LI Shusen, YAN Jiasheng, LIANG Guijie   +7 more
doaj   +1 more source

Increase resource power electronics module on the physics of failure method

MATEC Web of Conferences, 2014
A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
doaj   +1 more source

A Secondary Reconfigurable Inverter and Its Control Strategy

Applied Sciences, 2020
This article proposes a topology of the secondary reconfigurable inverter and the corresponding fault-tolerant control strategy. When the secondary reconfigurable inverter is operating normally, its topology structure is the TPSS circuit.
Yan Li, Peng Xiang, Yandong Chen
doaj   +1 more source

General phase segregation and phase pinning effects in lanthanide-doped lead halide perovskite with dual-wavelength lasing

Nature Communications
A strategy of lanthanide-ion doping into dual-halogen-alloyed perovskites CsPb(X x Y1-x )3 (X, Y = Cl, Br, I) via chemical vapor deposition is introduced, obtaining a series of high-quality, stable microplates.
Junyu He, Jun Luo, Biyuan Zheng, Feng Jiang, Tongqing Sun, Yaonan Xiong, Zhou Li, Jing Wu, Chenglin He, Jiahao Liu, Tingzhao Fu, Mengjian Zhu, Shulin Chen, Honglai Li, Mengqiu Cai, Zhihong Zhu, Fang Wang, Weihao Zheng, Xiujuan Zhuang   +18 more
doaj   +1 more source