Results 121 to 130 of about 878,159 (309)

From Materials to Medical Images: Translating Perovskite‐Based X‐Ray Detectors Toward Clinical Imaging

Advanced Science, EarlyView.
This review examines perovskite‐based X‐ray detectors from a materials‐to‐medical‐images perspective. Recent progress in perovskite‐based X‐ray detectors is discussed with emphasis on their relevance to clinical imaging. The key barriers to clinical implementation are analyzed.
Sibin Wang, Yongrui Yang, Kun Zhang, Xiaojuan Lu, Hong Yin, Yali Qiao, Xiaojia Zheng, Xiao Zhang, Yanlin Song   +8 more
wiley   +1 more source

A radiation-hardened Buck converter

IEICE Electronics Express, 2019
Yang, Pengbo, Luo, Ping, Li, Bo, Xiao, Haoyang, Lin, Rongxun, Zhou, Xiao, Zhen, Shaowei   +6 more
openaire   +2 more sources

Radiation-Hardened Electronics for the Space Environment

, 2007
RHESE covers a broad range of technology areas and products. - Radiation Hardened Electronics - High Performance Processing - Reconfigurable Computing - Radiation Environmental Effects Modeling - Low Temperature Radiation Hardened Electronics.
Watson, Michael D., Keys, Andrew S.
core  

Enhanced Mechanical Properties Via Boron‐Induced Multi‐Mechanism Strengthening in (NbTaTi1.5V)100‐xBx Refractory High Entropy Alloys

Advanced Science, EarlyView.
A trace amount of boron is introduced into NbTaTi1.5V RHEA, forming a finegrained BCC+TiO+TiB microstructure. The TiB phase generates numerous dislocations, strengthening the alloy. The alloy exhibits 3610 MPa compressive fracture strength and 1060 HV microhardness, while retaining 14.8% fracture strain.
Da Wu, Bo Li, Yuzhi Shi, Cong Li, Eryong Liu, Xiaohu Hou, Yimin Gao, Tao Wu, Pucun Bai, Chenyu Liang   +9 more
wiley   +1 more source

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

Advanced Electronic Materials
HfOx‐based resistive random‐access‐memory (ReRAM) devices (TiN/Ti/HfOx/RuOx/TiN) are fabricated by CMOS‐compatible materials (ruthenium (Ru)) and lithography‐lite process, potentially enabling a maskless, etching‐free process that can be implemented in ...
Yao‐Feng Chang, Yifu Huang, Chin‐Han Chung, Ying‐Chen Chen   +3 more
doaj   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Engineering Na‐Rich P2‐Type Layered Oxides Through Li/Ti Dual Doping for Oxygen Redox Activation and Superior Structural Stability

Advanced Energy Materials, EarlyView.
P2‐type sodium layered oxides have potential for high‐voltage operation but suffer from structural instability and capacity fading. This work demonstrates that synergistic Li and Ti co‐doping enhances sodium inventory, suppresses detrimental phase transitions, and activates reversible lattice oxygen redox.
Rishika Jakhar, Shrestha Ghosh, Adesh Rohan Mishra, Shristi Pradhan, Debalina Sarkar, Yuanlong Bill Zheng, Zengqing Zhuo, Tianyi Li, Lu Ma, Minghao Zhang, Shyue Ping Ong, Matthew Li, Leeann Sun, Prabhat Thapliyal, Jing Wang, Abhik Banerjee, Ying Shirley Meng   +16 more
wiley   +1 more source

Verification and Mitigation of Proton‐Induced Non‐Ionizing Damage in Perovskite Solar Cells for Space Applications

Advanced Energy Materials, EarlyView.
Metal‐halide perovskite solar cells offer high‐efficiency power for orbital missions but suffer from permanent proton‐induced degradation. This work identifies non‐ionizing energy loss (NIEL) as the primary driver of irreversible failure, inducing atomic displacements and microcracks in the high‐fluence regime. Through energy‐tuned mapping and scalable
Jangwon Byun, Sung‐Pil Yoon, Beomjun Park, Sung‐Jun Park, Dong Hoe Kim, Sunwoo Kim, Jin‐Wook Lee, Sangwook Lee, Hyun Suk Jung, Nam‐Gyu Park, Man‐Jong Lee   +10 more
wiley   +1 more source

Versatile Standing Wave Generation Between Arbitrarily Oriented Surfaces Using Acoustic Metasurface Deflectors and Retroreflectors

Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.
A novel method for generating versatile standing wave fields using an acoustic metasurface deflector and retroreflector is introduced. By overcoming traditional constraints of parallel surfaces, the approach enables customizable wave patterns and enhances applications in particle manipulation.
Chadi Ellouzi, Farhood Aghdasi, Ali Zabihi, Amir K. Miri, Chen Shen   +4 more
wiley   +1 more source

Radiation tolerant capacitor-SRAM without area overhead

Nuclear Engineering and Technology
In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM cells
Eunju Jo, Hosang Yoon, Hongjoon Park, Woo-young Choi, Inyong Kwon   +4 more
doaj   +1 more source