Results 101 to 110 of about 878,159 (309)
A reservoir‐guided silver‐nanoparticle soldering strategy is developed for bending‐resistant 3D graphene–metal heterojunctions. Controlled hot‐plate evaporation confines conductive ink within the metal reservoir, suppressing spreading and protecting the LIG interface from deformation‐induced fracture.
Saeyoung Park +5 more
wiley +1 more source
Radiation Hardened Clock Design [PDF]
: Clock generation and distribution are essential to CMOS microchips, providing synchronization to external devices and between internal sequential logic.
core
Zero Thermal Expansion and Local Structure in KxMnxFe2‐xMo3O12‐Based Materials
Local structure engineering via ion insertion drives local structural transformation from low‐symmetry P21/a to high‐symmetry R‐3c, enhancing structural flexibility and realizing a transition from positive thermal expansion to wide‐temperature‐range zero thermal expansion in KxMnxFe2‐xMo3O12‐based materials.
Gongsen He +13 more
wiley +1 more source
Radiation-hardened-by-design preamplifier with binary weighted current source for radiation detector
This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects.
Minuk Seung +3 more
doaj +1 more source
Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell. [PDF]
Muthu BR +6 more
europepmc +1 more source
Electric‐Current‐Induced Phase Transformation in Cu6Sn5 Below Its Equilibrium Transition Temperature
Electric current induces a monoclinic‐to‐hexagonal phase transformation in Cu6Sn5 at a measured bulk temperature of ∼120°C, below the equilibrium transition temperature. Ex situ synchrotron x‐ray diffraction, TEM, and matched thermal controls show that current stressing promotes the formation of a retained hexagonal η‐phase post‐stress state not ...
Shih‐kang Lin +3 more
wiley +1 more source
Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications
Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation.
Satheesh Kumar S, Kumaravel S
doaj +1 more source
Radiation-hardened bulk CMOS technology
The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data.
Dawes, W.R. Jr., Habing, D.H.
core
Defect‐configurational origins of the asymmetric apparent electrostrain are revealed in different piezoelectric ceramics via atomic‐scale visualization of defect configurations. Migration of oxygen vacancies leads to the electrobending effect in N2‐sintered BaTiO3, while defect dipoles in Ba0.99TiO2.99 generate true asymmetric electrostrain without ...
Jie Wang +7 more
wiley +1 more source
A Radiation-Hardened Low-Power SRAM with Enhanced Write Capability for Space Applications
With continued scaling of CMOS technology, the critical charge required for state retention in SRAM cells has decreased, leading to increased vulnerability to radiation-induced soft errors such as single-event upsets (SEUs) and single-event multi-node ...
Sang-Jin Kim, Sung-Hun Jo
doaj +1 more source

