Results 91 to 100 of about 1,384,876 (255)
A radiation-hardened SOI-based FPGA
A radiation-hardened SRAM-based field programmable gate array VS1000 is designed and fabricated with a0.5μm partial-depletion silicon-on-insulator logic process at the CETC58th Institute.
Liu, Guizhai +38 more
core +1 more source
A novel B2‐ordered Ti‐Zr‐V‐Al medium‐entropy intermetallic is developed through controlled metastability engineering, which activates an ordered TRIP effect via a new B2→D019‐α2 transformation with a distinctive {0001}α2//{110}B2, <11‐20>α2//<100>B2 orientation relationship. This alloy achieves an elongation of ∼7%, a strength of ∼1.1 GPa, and superior
Chaohua Li +8 more
wiley +1 more source
Magnetically guided macrophage immunobots integrate active tumor targeting with immunometabolic therapy. After systemic administration, magnetic actuation enhances immunobot retention and tumor penetration, while LPS‐functionalized FePt microrollers sustain M1‐like polarization through inflammatory and iron‐amplified oxidative signaling and trigger ...
Xirui Zeng +7 more
wiley +1 more source
Mechanics reshapes chemistry: plastic flow actively governs two divergent, atomic‐scale mechanochemical pathways that tailor strain localization and ductility in high‐strength 7xxx Al alloys. Rather than relying on static structures, deformation dynamically reinforces the solution‐treated state via clustering, yet destabilizes the peak‐aged condition ...
Huan Zhao +9 more
wiley +1 more source
Radiation-hardened-by-design preamplifier with binary weighted current source for radiation detector
This paper presents a radiation-hardened-by-design preamplifier that utilizes a self-compensation technique with a charge-sensitive amplifier (CSA) and replica for total ionizing dose (TID) effects.
Minuk Seung +3 more
doaj +1 more source
PSCs are afflicted by inherent defects and lattice strain that limit PCE and stability. A cross‐linked multifunctional ionogel [HA‐AA][EMIES] is developed to modulate crystallization, relieve residual strain, and passivate defects, extending carrier diffusion length to over 8 µm and delivering PCEs of 26.45% for rigid devices and 25.14% for flexible ...
Wen Wu +12 more
wiley +1 more source
Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications
Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation.
Satheesh Kumar S, Kumaravel S
doaj +1 more source
Radiation hardened field oxide
This paper describes the development of a radiation-tolerant field oxide compatible with both MOS and bipolar technologies. Data is presented which illustrates that nonguardbanded devices utilizing conventional field oxide structures cannot be expected ...
Sanders, T. J. +2 more
core
This study reveals that 5'tiRNA‐Gln interacts with hnRNPC to promote IGF1R liquid‐liquid phase separation, which drives ERK1/2 signaling activation, EMT, and breast cancer bone metastasis. These findings highlight a novel mechanism of breast cancer bone metastasis and potential therapeutic target in metastatic breast cancer.
Bingnan Wang +9 more
wiley +1 more source
A Radiation-Hardened Low-Power SRAM with Enhanced Write Capability for Space Applications
With continued scaling of CMOS technology, the critical charge required for state retention in SRAM cells has decreased, leading to increased vulnerability to radiation-induced soft errors such as single-event upsets (SEUs) and single-event multi-node ...
Sang-Jin Kim, Sung-Hun Jo
doaj +1 more source

