Results 31 to 40 of about 878,159 (309)
Frontiers in Physics, 2021 We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier ...
Stavros Giannakopoulos +17 more
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3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance
Micromachines, 2018 In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed.
Ying Wang +6 more
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Radiation changes in hardened Portland cement paste under the influence of gamma radiation
Magazine of Civil Engineering, 2023 The possibility of using materials in radiation protection shields when designing new and extending the service life of existing nuclear energy facilities requires knowledge or the ability to predict their radiation changes.
Denisov Aleksandr
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Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [PDF]
, 2010 This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging.
Goiffon, Vincent +13 more
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Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
, 2009 An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Goiffon, Vincent +2 more
core +1 more source
A Radiation Hardened Field Oxide [PDF]
IEEE Transactions on Nuclear Science, 1977 This paper describes the results of a radiation-tolerant field oxide development compatible with both MOS and bipolar technologies. Data is presented which illustrates that nonguardbanded devices utilizing conventional field oxide structures cannot be expected to survive an ionizing radiation dose above approximately 5 × 104 rads (Si) due to inversion ...
J. R. Adams, W. R. Dawes, T. J. Sanders
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Yuanzineng kexue jishuTemperature and supply voltage emerge as critical factors influencing single event upset (SEU) responses in nano-scale fully depleted silicon-on-insulator (FDSOI) technology.
LI Tongde1, 2, ZHU Yongqin1, 2, SUN Yu1, 2, WANG Liang1, 2, ZHAO Yuanfu2, 3,
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Ionizing radiation effects on CMOS imagers manufactured in deep submicron process [PDF]
, 2008 We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging.
Olivier Saint-Pé +13 more
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Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology [PDF]
, 2011 Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P ...
Goiffon, Vincent +14 more
core +1 more source
Single Event Effects in CMOS Image Sensors [PDF]
, 2012 In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI ...
Goiffon, Vincent +4 more
core +1 more source